ZXM41N10FTA [DIODES]
Transistor,;
| 型号： | ZXM41N10FTA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Transistor, |
| 文件： | 总2页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Obsolete. Alternative is BSS123.
ZXM41N10F
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET
FEATURES
• BVDSS = 100V
• Low Threshold
DEVICE MARKING
• 410
ABSOLUTE MAXIMUM RATINGS
PINOUT TOP VIEW
SOT23
PARAMETER
SYMBOL
VALUE
100
UNIT
Drain-source voltage
Drain-gate voltage
V
V
V
V
DS
100
DGR
Continuous drain current at T
Pulsed drain current
=25°C
I
I
170
mA
mA
V
amb
D
680
DM
Gate-source voltage
V
P
± ±0
GS
tot
Power dissipation at T
=25°C
360
mW
°C
amb
Operating and storage temperature range
T :T
-55 to +150
j
stg
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS
Drain-source breakdown voltage BV
100
0.5
V
I =0.25mA, V =0V
D GS
DSS
Gate-source threshold voltage
Gate-body leakage
V
I
1.5
50
V
I =1mA, V = V
DS GS
D
GS(th)
nA
nA
V
=±20V, V =0V
DS
GSS
DSS
GS
Zero gate voltage drain current
Static drain-source on-state
I
500
V
=100V, V =0V
DS GS
R
8
⍀
⍀
V
V
=4.5V, I =150mA
D
DS(on)
GS
GS
(1)
resistance
12
=3V, I =50mA
D
(1)(2)
Forward transconductance
g
C
C
80
mS
pF
V
=25V, I =100mA
D
fs
DS
(2)
Input capacitance
25
9
iss
oss
Common source output
pF
V
=25V, V =0V, f=1MHz
GS
(2)
DS
capacitance
(2)
Reverse transfer capacitance
C
4
pF
ns
ns
ns
ns
rss
(2)(3)
Turn-on delay time
t
t
t
t
10
10
15
25
d(on)
(2)(3)
Rise time
r
V
≈30V, I =280mA
DD
D
(2)(3)
Turn-off delay time
d(off)
f
(2)(3)
Fall time
NOTES:
(1)
Measured under pulsed conditions. Width=300µs. Duty cycle Յ2% (2) Sample test.
Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
(3)
ISSUE 2 - OCTOBER 2006
SEMICONDUCTORS
1
ZXM41N0F
PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
Min
Millimeters
Inches
Max
DIM
DIM
Min
2.67
1.20
ᎏ
Max
Max
0.120
0.055
0.043
0.021
Min
0.33
0.01
2.10
0.45
Max
Max
0.020
0.004
0.0985
0.025
A
B
C
D
F
3.05
1.40
1.10
0.53
0.15
0.105
0.047
ᎏ
H
K
0.51
0.10
2.50
0.64
0.013
0.0004
0.083
0.018
L
0.37
0.085
0.015
M
N
⍜
0.0034 0.0059
0.075 NOM
0.95 NOM
10Њ TYP
0.0375 NOM
10Њ TYP
G
1.90 NOM
© Zetex Semiconductors plc 2006
Europe
Americas
Asia Pacific
Zetex (Asia) Ltd
Corporate Headquaters
Zetex GmbH
Zetex Inc
Zetex plc
Kustermann-Park
Balanstraße 59
D-8541 München, Germany
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Fields New Road, Chadderton
Oldham, OL9 8NP
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 2 - OCTOBER 2006
SEMICONDUCTORS
2
相关型号：
©2020 ICPDF网 联系我们和版权申明