ZX5T851ZTA [ZETEX]
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89; 60V NPN低饱和中功率晶体管SOT89
| 型号： | ZX5T851ZTA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 |
| 文件： | 总6页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZX5T851Z
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
SUMMARY
BVCEO = 60V : RSAT = 30m ; IC = 5A
DESCRIPTION
Packaged in the SOT89 outline this new 5th generation low saturation 60V NPN
transistor offers extremely low on state losses making it ideal for use in DC-DC
circuits and various driving and power management functions.
FEATURES
• Extrem ely low equivalent on-resistance; RSAT = 30m V at 6A
• 5 am ps continuous current
SOT89
• Up to 20 am ps peak current
• Very low saturation voltages
• Excellent hFE characteristics up to 10 am ps
APPLICATIONS
• Em ergency lighting circuits
• Motor driving (including DC fans)
• Solenoid, relay and actuator drivers
• DC-DC m odules
• Backlight inverters
• Power switches
PINOUT
• MOSFET gate drivers
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
ZX5T851ZTA
7”
12m m
1000 units
em bossed
DEVICE MARKING
TOP VIEW
• 851
ISSUE 2 - DECEMBER 2004
1
S E M IC O N D U C T O R S
ZX5T851Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER
S YMBOL
LIMIT
UNIT
Co lle cto r-b a s e vo lta g e
Co lle cto r-e m itte r vo lta g e
Em itte r-b a s e vo lta g e
BV
BV
BV
150
V
CBO
CEO
EBO
60
V
7
V
A
(a )
Co n tin u o u s co lle cto r cu rre n t
I
5
C
Pe a k p u ls e cu rre n t
(a )
I
20
1.5
A
CM
Po w e r d is s ip a tio n a t T =25°C
A
P
W
D
Lin e a r d e ra tin g fa cto r
12
m W/°C
W
(b )
Po w e r d is s ip a tio n a t T =25°C
A
P
2.1
D
Lin e a r d e ra tin g fa cto r
16.8
m W/°C
°C
Op e ra tin g a n d s to ra g e te m p e ra tu re ra n g e
T , T
-55 to +150
j
s tg
THERMAL RESISTANCE
PARAMETER
S YMBOL
VALUE
83
UNIT
°C/W
°C/W
(a )
J u n ctio n to a m b ie n t
R
R
⍜J A
⍜J A
(b )
J u n ctio n to a m b ie n t
60
NOTES
(a) For a device surface m ounted on 25m m x 25m m x 1.6m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface m ounted on 50m m x 50m m x 1.6m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 2 - DECEMBER 2004
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ZX5T851Z
CHARACTERISTICS
ISSUE 2 - DECEMBER 2004
3
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ZX5T851Z
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
am b
PARAMETER
S YMBOL
MIN.
150
150
60
TYP. MAX. UNIT CONDITIONS
Co lle cto r-b a s e b re a kd o w n vo lta g e
Co lle cto r-e m itte r b re a kd o w n vo lta g e
Co lle cto r-e m itte r b re a kd o w n vo lta g e
Em itte r-b a s e b re a kd o w n vo lta g e
Co lle cto r cu t-o ff cu rre n t
BV
BV
BV
BV
190
190
80
V
V
I =100A
C
CBO
CER
CEO
EBO
I =1A, RBՅ1k⍀
C
V
I =10m A*
C
7
8.1
V
I =100A
E
I
20
0.5
20
n A
A
n A
A
n A
V
=120V
CB
CBO
V
=120V,T
=100ЊC
=100ЊC
CB
am b
am b
Co lle cto r cu t-o ff cu rre n t
I
V =120V
CB
CER
R Յ 1k⍀
0.5
V =120V,T
CB
Em itte r cu t-o ff cu rre n t
I
10
V
=6V
EBO
EB
Co lle cto r-e m itte r s a tu ra tio n vo lta g e
V
17
35
30
m V I =100m A, I =5m A*
C B
CE(S AT)
55
m V I =1A, I =100m A*
C B
40
65
m V I =1A, I =50m A*
C B
90
125
230
1100
1050
m V I =2A, I =50m A*
C B
170
970
910
200
200
105
40
m V I =6A, I =300m A*
C B
Ba s e -e m itte r s a tu ra tio n vo lta g e
Ba s e -e m itte r tu rn -o n vo lta g e
V
V
H
m V I =6A, I =300m A*
C B
BE(S AT)
BE(ON)
FE
m V I =6A, V =1V*
C
CE
S ta tic fo rw a rd cu rre n t tra n s fe r ra tio
100
100
55
I =10m A, V =1V*
C CE
300
I =2A, V =1V*
C CE
I =5A, V =1V*
C
CE
20
I =10A, V =1V*
C CE
Tra n s itio n fre q u e n cy
f
130
I =100m A, V =10V
T
C
CE
f=50MHz
Ou tp u t ca p a cita n ce
S w itch in g tim e s
C
31
42
p F
n s
V
=10V, f=1MHz*
OBO
CB
t
t
I =1A, V =10V,
C CC
ON
OFF
760
I
=I =100m A
B1 B2
* Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ2%.
ISSUE 2 - DECEMBER 2004
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ZX5T851Z
TYPICAL CHARACTERISTICS
ISSUE 2 - DECEMBER 2004
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ZX5T851Z
PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dim ensions are in m illim eters. Approxim ate conversions are given in inches
PACKAGE DIMENSIONS
Millim eters
Inches
Millim eters
Inches
Min
DIM
DIM
Min
1.40
0.38
-
Max
Min
Max
0.630
0.019
0.021
0.071
0.017
0.181
Min
1.40
3.75
-
Max
Max
0.059
0.167
0.102
0.118
0.112
-
A
b
1.60
0.48
0.53
1.80
0.44
4.60
0.550
0.015
-
e
E
1.50
4.25
2.60
3.00
2.85
-
0.055
0.150
-
b1
b2
c
E1
G
H
-
1.50
0.28
4.40
0.060
0.011
0.173
2.90
2.60
-
0.114
0.102
-
D
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S E M IC O N D U C T O R S
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