ZVN4306G(3) [ZETEX]
;
| 型号： | ZVN4306G(3) |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： |
|
| 文件： | 总2页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN4306G
ISSUE 3 - OCTOBER 1995
FEATURES
*
Very low RDS(ON) = .33Ω
D
APPLICATIONS
*
*
DC - DC Converters
Solenoids/Relay Drivers for Autom otive
S
PARTMARKING DETAIL -
ZVN4306
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VDS
VALUE
UNIT
Drain-Source Voltage
60
V
A
Continuous Drain Current at Tam b=25°C
Pulsed Drain Current
ID
2.1
IDM
15
± 20
A
Gate Source Voltage
VGS
V
Power Dissipation at Tam b=25°C
Operating and Storage Tem perature Range
ELECTRICAL CHARACTERISTICS (at T
Ptot
3
W
°C
Tj:Tstg
-55 to +150
= 25°C unless otherw ise stated).
am b
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
60
V
ID=1m A, VGS=0V
ID=1m A, VDS= VGS
Gate-Source Threshold VGS(th)
Voltage
1.3
3
V
Gate-Body Leakage
IGSS
IDSS
20
nA
V
GS=± 20V, VDS=0V
VDS=60V, VGS=0V
DS=48V, VGS=0V, T=125°C(2)
Zero Gate Voltage
Drain Current
10
100
µA
µA
V
On-State Drain
Current(1)
ID(on)
RDS(on)
gfs
12
A
VDS=10V, VGS=10V
Static Drain-Source
On-State Resistance (1)
0.22
0.32
0.33
0.45
VGS=10V, ID=3A
VGS=5V, ID=1.5A
Ω
Ω
Forward
0.7
S
VDS=25V,ID=3A
Transconductance (1)
Input Capacitance (2)
Ciss
350
140
pF
pF
Comm on Source
Coss
VDS=25 V, VGS=0V, f=1MHz
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Crss
30
8
pF
ns
Turn-On Delay Tim e
(2)(3)
td(on)
VDD≈25V, VGEN=10V, ID=3A
Rise Tim e (2)(3)
tr
25
30
ns
ns
Turn-Off Delay Tim e
(2)(3)
td(off)
Fall Tim e (2)(3)
tf
16
ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sam ple test.
(3) Switching tim es m easured with 50Ω source im pedance and <5ns rise tim e on a pulse generator
Spice param eter data is available upon request for this device
3 - 411
ZVN4306G
TYPICAL CHARACTERISTICS
VGS=
12V 10V
20V
9V
8V
VGS=3V
3.5V
5V 6V
12
11
10
10
7V
9
8
7
6
5
6V
5V
1.0
8V
4
10V
3
2
1
4V
3.5V
3V
0
0.1
0.1
0
1
2
3
4
5
6
7
8
9
10
100
1
10
DS
V
Voltage (Volts)
- Drain Source
D-
(Am ps)
I
Drain Current
Saturation Characteristics
On-resistance v drain current
2.6
2.4
2.2
2.0
1.8
1.6
5
VGS=10V
D=
I
3A
4
3
VDS=10V
1.4
1.2
1.0
0.8
0.6
2
1
VGS=VDS
ID=1m A
Gate Threshold Voltage VGS(TH)
0
-50
150
175 200 225
-25
0
25 50 75 100125
2
6
8
10 12
16 18 20
4
14
0
D(on)
)
I
- Drain Current (Amps
j
T -Junction Temperature (°C)
Transconductance v drain current
Normalised RDS(on) and VGS(th) v Temperature
VDD=
16
20V
40V
60V
500
400
300
14
ID=3A
12
10
8
Ciss
200
6
4
2
0
100
Coss
Crss
0
0
10
20
30
40
50
60
70
80
1
2
3
4
5
6
7
8
9
10 11 12
0
DS
V
-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
3 - 412
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