ZVN4306GV [DIODES]
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET; SOT223 N沟道增强型垂直DMOS FET
| 型号： | ZVN4306GV |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| 文件： | 总4页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN4306GV
ISSUE 1 - APRIL 1998
FEATURES
*
*
*
BVDSS=60V
DS(ON) = 0.33Ω
Repetitive Avalanche Rating
D
R
APPLICATIONS
S
*
*
*
DC - DC Converters
Solenoids/Relay Drivers for Automotive
Stepper Motor Drivers
D
G
PARTMARKING DETAIL -
ZVN4306V
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VDS
VALUE
UNIT
V
Drain-Source Voltage
60
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
ID
2.1
A
IDM
15
A
Gate Source Voltage
VGS
V
± 20
Power Dissipation at Tamb=25°C
Avalanche Current-Repetitive
Avalanche Energy-Repetitive
Operating and Storage Temperature Range
Ptot
3
W
A
IAR
1
25
EAR
mJ
°C
Tj:Tstg
-55 to +150
ZVN4306GV
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
60
V
ID=1mA, VGS=0V
Gate-Source
Threshold Voltage
VGS(th)
1.3
3
V
ID=1mA, VDS= VGS
Gate-Body Leakage
IGSS
IDSS
20
nA
VGS=± 20V, VDS=0V
Zero Gate Voltage
Drain Current
10
100
VDS=60V, VGS=0V
VDS=48V, VGS=0V, T=125°C(2)
µA
µA
On-State Drain
Current(1)
ID(on)
12
A
VDS=10V, VGS=10V
Static Drain-Source
On-State Resistance
(1)
RDS(on)
0.22
0.32
0.33
0.45
VGS=10V, ID=3A
Ω
Ω
V
GS=5V, ID=1.5A
Forward
Transconductance (1)
gfs
0.7
S
VDS=25V,ID=3A
Input Capacitance (2) Ciss
350
140
pF
pF
Common Source
Output Capacitance
(2)
Coss
VDS=25 V, VGS=0V, f=1MHz
Reverse Transfer
Capacitance (2)
Crss
30
8
pF
ns
Turn-On Delay Time td(on)
(2)(3)
V
DD ≈25V, VGEN=10V, ID=3A
Rise Time (2)(3)
tr
25
30
ns
ns
Turn-Off Delay Time td(off)
(2)(3)
Fall Time (2)(3)
tf
16
ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
ZVN4306GV
TYPICAL CHARACTERISTICS
VGS=
20V
12V 10V
9V
8V
VGS=3V
3.5V
6V
5V
12
11
10
10
7V
9
8
7
6
5
6V
5V
1.0
8V
4
3
2
1
10V
4V
3.5V
3V
0
0.1
0.1
0
1
2
3
4
5
6
7
8
9
10
100
1
10
DS
V
Voltage (Volts)
- Drain Source
ID-Drain Current (Amps)
Saturation Characteristics
On-resistance v drain current
2.6
2.4
2.2
2.0
1.8
1.6
5
VGS=10V
ID=3A
4
3
VDS=10V
1.4
1.2
1.0
0.8
0.6
2
1
VGS=VDS
ID=1mA
Gate Threshold Voltage VGS(TH)
0
-50
150
175 200 225
-25
0
25 50 75 100 125
2
6
8
10 12
16 18 20
0
4
14
D(on)
I
)
- Drain Current (Amps
Tj-Junction Temperature (°C)
Transconductance v drain current
Normalised RDS(on) and VGS(th) v Temperature
VDD=
16
20V
40V
60V
500
400
300
14
ID=3A
12
10
8
Ciss
200
6
4
2
0
100
Coss
Crss
0
0
10
20
30
40
50
60
70
80
1
2
3
4
5
6
7
8
9
10 11 12
0
DS
V
-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
ZVN4306GV
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