MT160CB08T2 [YANGJIE]
Silicon Controlled Rectifier,;
| 型号： | MT160CB08T2 |
| 厂家： | 
YANGZHOU YANGJIE ELECTRONIC CO., LTD |
| 描述： | Silicon Controlled Rectifier, 局域网 栅 栅极 |
| 文件： | 总4页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
MT160CB-T2
COMPLIANT
Thyristor/Diode Modules
VRRM / VDRM
IFAV / ITAV
800 to 1800V
160A
Applications
Power Converters
Lighting Control
DC Motor Control and Drives
Heat and temperature control
Circuit
Features
International standard package
High Surge Capability
Glass passivated chip
Simple Mounting
Heat transfer through aluminum oxide
DBCceramic isolated metal baseplate
1
2
3
5
4
UL recognized applied for file no. E360040
Module Type
TYPE
VRRM/VDRM
800V
VRSM
900V
1300V
1700V
1900V
MT160CB08T2
MT160CB12T2
MT160CB16T2
MT160CB18T2
1200V
1600V
1800V
◆Diode
Maximum Ratings
Symbol
Item
Conditions
Values
Units
A
ID
IFSM
i2t
Output Current(D.C.)
Tc=85℃
160
Surge forward current
Circuit Fusing Consideration
t=10mS Tvj =45℃
5400
A
A2s
145000
3000
Visol
Tvj
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
a.c.50HZ;r.m.s.;1min
V
-40 to +125
-40 to +125
3±15%
5±15%
165
℃
Tstg
Mt
℃
Mounting Torque
To terminals(M6)
To heatsink(M6)
Nm
Nm
g
Ms
Weight
Module（Approximately）
Thermal Characteristics
Symbol
Rth(j-c)
Item
Conditions
Junction to Case
Values
0.085
Units
℃/W
Thermal Impedance, max.
Rth(c-s) Thermal Impedance, max.
Case to Heatsink
0.05
℃/W
Electrical Characteristics
Values
Min. Typ.
Symbol
VFM
Item
Conditions
Units
Max.
1.70
Forward Voltage Drop, max.
V
T=25℃ IF =500A
Tvj =25℃ VRD=VRRM
Tvj =125℃ VRD=VRRM
Repetitive Peak Reverse Current,
max.
≤0.5
≤9
mA
mA
IRRM
S-M051
www.21yangjie.com
Rev.2.0, 27-May-17
1
RoHS
MT160CB-T2
COMPLIANT
◆Thyristor
Maximum Ratings
Symbol
Item
Conditions
Values
Units
ITAV
Average On-State Current
Sine 180o;Tc=85℃
160
A
TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
5400
5000
ITSM
Surge On-State Current
A
TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
145000
125000
i2t
Circuit Fusing Consideration
A2s
Visol
Tvj
Isolation Breakdown Voltage(R.M.S) a.c.50HZ;r.m.s.;1min
Operating Junction Temperature
3000
V
-40 to +130
-40 to +125
3±15%
℃
Tstg
Mt
Storage Temperature
℃
Mounting Torque
To terminals(M6)
To heatsink(M6)
Nm
Nm
Ms
5±15%
Critical Rate of Rise of On-State
Current
TVJ= TVJM , 2/3VDRM ,IG =500mA
Tr<0.5us,tp>6us
di/dt
200
A/us
Critical Rate of Rise of Off-State
Voltage, min.
dv/dt
a
TJ=TVJM ,2/3VDRM linear voltage rise
1000
50
V/us
m/s2
Maximum allowable acceleration
Thermal Characteristics
Symbol
Rth(j-c)
Item
Conditions
Junction to Case
Values
0.17
Units
℃/W
Thermal Impedance, max.
Rth(c-s)
Thermal Impedance, max.
Case to Heatsink
0.10
℃/W
Electrical Characteristics
Values
Min. Typ. Max.
Symbol
Item
Conditions
Units
VTM
Peak On-State Voltage, max.
T=25℃ IT =500A
1.70
V
Repetitive Peak Reverse Current,
max. / Repetitive Peak Off-State
Current, max.
TVJ=TVJM ,VR=VRRM ,VD=
VDRM
IRRM/IDRM
40
mA
For power-loss
calculations only
(TVJ =125℃)
VTO
On state threshold voltage
0.85
1.5
V
Value of on-state
slope resistance. max
rT
TVJ =TVJM
mΩ
VGT
IGT
VGD
IGD
IL
Gate Trigger Voltage, max.
Gate Trigger Current, max.
Non-triggering gate voltage, max.
Non-triggering gate current, max.
Latching current, max.
TVJ =25℃ , VD =6V
3
V
TVJ =25℃ , VD =6V
150
0.25
10
mA
V
TVJ=125℃,VD =2/3VDRM
TVJ =125℃, VD =2/3VDRM
TVJ =25℃ , RG = 33 Ω
TVJ =25℃ , VD =6V
mA
mA
mA
300
150
1000
400
IH
Holding current, max.
TVJ=25℃,
IG=1A, diG/dt=1A/us
tgd
tq
Gate controlled delay time
1
us
us
Circuit commutated turn-off time
TVJ =TVJM
100
S-M051
www.21yangjie.com
Rev.2.0, 27-May-17
2
RoHS
MT160CB-T2
COMPLIANT
Performance Curves
300
W
300
A
DC
240
sin.180
rec.120
DC
200
rec.60
180
sin.180
rec.120
rec.30
120
60
rec.60
rec.30
100
PTAV
0
ITAVM
0
0
ITAV
50
100
150
A 200
0
Tc
50
100
℃ 130
Fig1. Power dissipation
Fig2.Forward Current Derating Curve
6000
A
0.30
50HZ
Zth(j-S)
Zth(j-C)
℃/ W
0.1
3000
0
0
0.001
t
0.01
0.1
1
10
S
100
10
100
ms 1000
Fig3. Transient thermal impedance
Fig4. Max Non-Repetitive Forward Surge
Current
600
A
Typ.
400
125℃
max.
200
IT
0
25℃
- - -125℃
0
VTM
0.5
1.0
1.5 2.0
V
Fig5. Forward Characteristics
S-M051
Rev.2.0, 27-May-17
www.21yangjie.com
3
RoHS
MT160CB-T2
COMPLIANT
100
V
1/2·MT160CB18T2
20V;20Ω
100
10
W
(
50
W
0
.
5
ms
(
8
)
ms
)
VGT
∧
PG(tp)
1
-40℃
25℃
Tvj
125℃
VGD125
℃
IGT
VG
IGD125
℃
0.1
0.001 IG
0.01
0.1
1
10
A 100
Fig6. Gate trigger Characteristics
Package Outline Information
CASE: T2
YJ
Dimensions in mm
S-M051
www.21yangjie.com
Rev.2.0, 27-May-17
4
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