MT160CB12T2 [APTSEMI]
Thyristor/Diode Modules;
| 型号： | MT160CB12T2 |
| 厂家： | 
Jiangsu APT Semiconductor Co.,Ltd |
| 描述： | Thyristor/Diode Modules |
| 文件： | 总4页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MT160CB18T2
Thyristor/Diode Modules
VRRM / VDRM
IFAV / ITAV
800 to 1800V
160Amp
Applications
y
y
y
y
Power Converters
Lighting Control
DC Motor Control and Drives
Heat and temperature control
Circuit
Features
y
y
y
y
y
International standard package
High Surge Capability
Glass passivated chip
Simple Mounting
Heat transfer through aluminum oxide
DBCceramic isolated metal baseplate
UL recognized applied for file no. E360040
y
Module Type
TYPE
VRRM/VDRM
VRSM
MT160CB08T2
MT160CB12T2
MT160CB16T2
MT160CB18T2
800V
1200V
1600V
1800V
900V
1300V
1700V
1900V
◆Diode
Maximum Ratings
Symbol
Item
Conditions
Values
Units
A
ID
IFSM
i2t
Output Current(D.C.)
Tc=85℃
160
Surge forward current
t=10mS Tvj =45℃
5400
A
A2s
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
145000
3000
Visol
Tvj
a.c.50HZ;r.m.s.;1min
V
-40 to +125
-40 to +125
3±15%
5±15%
165
℃
Tstg
Mt
℃
Mounting Torque
To terminals(M6)
To heatsink(M6)
Nm
Nm
g
Ms
Weight
Module（Approximately）
Thermal Characteristics
Symbol
Rth(j-c)
Item
Conditions
Junction to Case
Values
0.085
Units
℃/W
Thermal Impedance, max.
Rth(c-s) Thermal Impedance, max.
Case to Heatsink
0.05
℃/W
Electrical Characteristics
Values
Min. Typ.
Symbol
VFM
Item
Conditions
Units
Max.
1.70
Forward Voltage Drop, max.
V
T=25℃IF =500A
Tvj =25℃VRD=VRRM
Tvj =125℃VRD=VRRM
Repetitive Peak Reverse Current,
max.
≤0.5
≤9
mA
mA
IRRM
Document Number: S-M0051
Rev.1.0, May.31, 2013
www.apt-semi.com
1
MT160CB18T2
◆Thyristor
Maximum Ratings
Symbol
Item
Conditions
Values
Units
ITAV
Average On-State Current
Sine 180o;Tc=85℃
160
A
TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
5400
5000
ITSM
Surge On-State Current
A
TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
145000
125000
i2t
Circuit Fusing Consideration
A2s
Visol
Tvj
Isolation Breakdown Voltage(R.M.S) a.c.50HZ;r.m.s.;1min
Operating Junction Temperature
3000
V
-40 to +130
-40 to +125
3±15%
℃
Tstg
Mt
Storage Temperature
℃
Mounting Torque
To terminals(M6)
To heatsink(M6)
Nm
Nm
Ms
5±15%
Critical Rate of Rise of On-State
Current
TVJ= TVJM , 2/3VDRM ,IG =500mA
Tr<0.5us,tp>6us
di/dt
200
A/us
Critical Rate of Rise of Off-State
Voltage, min.
dv/dt
a
TJ=TVJM ,2/3VDRM linear voltage rise
1000
50
V/us
m/s2
Maximum allowable acceleration
Thermal Characteristics
Symbol
Rth(j-c)
Item
Conditions
Junction to Case
Values
0.17
Units
℃/W
Thermal Impedance, max.
Rth(c-s)
Thermal Impedance, max.
Case to Heatsink
0.10
℃/W
Electrical Characteristics
Values
Min. Typ. Max.
Symbol
Item
Conditions
Units
VTM
Peak On-State Voltage, max.
T=25℃ IT =500A
1.70
V
Repetitive Peak Reverse Current,
max. / Repetitive Peak Off-State
Current, max.
TVJ=TVJM ,VR=VRRM ,VD=
VDRM
IRRM/IDRM
40
mA
For power-loss
calculations only
(TVJ =125℃)
VTO
On state threshold voltage
0.85
1.5
V
Value of on-state
slope resistance. max
rT
TVJ =TVJM
mΩ
VGT
IGT
VGD
IGD
IL
Gate Trigger Voltage, max.
Gate Trigger Current, max.
Non-triggering gate voltage, max.
Non-triggering gate current, max.
Latching current, max.
TVJ =25℃ , VD =6V
3
V
TVJ =25℃ , VD =6V
150
0.25
10
mA
V
TVJ=125℃,VD =2/3VDRM
TVJ =125℃, VD =2/3VDRM
TVJ =25℃ , RG = 33 Ω
TVJ =25℃ , VD =6V
mA
mA
mA
300
150
1000
400
IH
Holding current, max.
TVJ=25℃,
IG=1A, diG/dt=1A/us
tgd
tq
Gate controlled delay time
1
us
us
Circuit commutated turn-off time
TVJ =TVJM
100
Document Number: S-M0051
Rev.1.0, May.31, 2013
www.apt-semi.com
2
MT160CB18T2
Performance Curves
300
W
300
A
DC
240
sin.180
rec.120
DC
200
rec.60
180
sin.180
rec.120
rec.30
120
60
rec.60
rec.30
100
PTAV
0
ITAVM
0
0
ITAV
50
100
150
A
200
0
Tc
50
100
℃ 130
Fig1. Power dissipation
Fig2.Forward Current Derating Curve
6000
A
0.30
50HZ
Zth(j-S)
Zth(j-C)
℃/ W
0.1
3000
0
0
0.001
t
0.01
0.1
1
10
S
100
10
100
ms 1000
Fig3. Transient thermal impedance
Fig4. Max Non-Repetitive Forward Surge
Current
600
A
Typ.
400
125℃
max.
200
IT
0
25℃
- - -125℃
0
VTM
0.5
1.0
1.5 2.0
V
Fig5. Forward Characteristics
Document Number: S-M0051
Rev.1.0, May.31, 2013
www.apt-semi.com
3
MT160CB18T2
100
V
1/2·MT160CB18T2
20V;20Ω
10
1
VGT
∧
PG(tp)
-40℃
25℃
Tvj
125℃
VGD125
℃
IGT
VG
IGD125
℃
0.1
0.001 IG
0.01
0.1
1
10
A
100
Fig6. Gate trigger Characteristics
Package Outline Information
CASE: T2
Dimensions in mm
Document Number: S-M0051
Rev.1.0, May.31, 2013
www.apt-semi.com
4
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