ES1B-T3-LF [WTE]
暂无描述;
| 型号： | ES1B-T3-LF |
| 厂家： | 
WON-TOP ELECTRONICS |
| 描述： | 暂无描述 整流二极管 光电二极管 瞄准线 |
| 文件： | 总3页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WTE
POWER SEMICONDUCTORS
ES1A – ES1J
1.0A SURFACE MOUNT SUPER FAST RECTIFIER
Features
!
Glass Passivated Die Construction
!
!
!
!
!
!
Ideally Suited for Automatic Assembly
B
Low Forward Voltage Drop, High Efficiency
Surge Overload Rating to 30A Peak
Low Power Loss
Super-Fast Recovery Time
Plastic Case Material has UL Flammability
Classification Rating 94V-O
D
A
F
C
H
G
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ E
SMA/DO-214AC
Mechanical Data
Dim
A
Min
2.50
4.00
1.40
0.152
4.80
2.00
0.051
0.76
Max
2.90
4.60
1.60
0.305
5.28
2.44
0.203
1.52
!
!
Case: Low Profile Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
B
C
!
!
!
D
E
Weight: 0.064 grams (approx.)
F
G
H
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic
Symbol
ES1A
ES1B
ES1C
ES1D
ES1E
ES1G
ES1J Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
70
150
105
200
300
210
400
280
600
420
V
RMS Reverse Voltage
VR(RMS)
IO
140
1.0
V
A
Average Rectified Output Current
@TL = 120°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
30
A
Forward Voltage
@IF = 1.0A
VFM
IRM
0.95
1.25
1.7
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
5.0
500
µA
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
trr
Cj
35
10
nS
pF
RꢀJL
Tj, TSTG
35
K/W
°C
Operating and Storage Temperature Range
-65 to +150
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
ES1A – ES1J
1 of 3
© 2002 Won-Top Electronics
1.00
Tj = 25°C
Single phase half wave
Resistive or Inductive load
Pulse width = 300µs
10
0.75
0.50
0.25
ES1E - ES1G
ES1A - ES1D
1.0
ES1J
0.1
0.01
100
0
0
25
50
75
100 125
150 175
( ° C)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TL, LEAD TEMPERATURE
Fig. 1 Forward Current Derating Curve
30
Tj = 25°C
f = 1.0MHz
Pulse width
8.3 ms single half-sine-wave
(JEDEC method)
20
10
0
10
1
1
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60Hz
Fig. 3 Pea Forward Surge Current
Fig. 4 Typical Junction Capacitance
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
(-)
Pulse
Generator
(Note 2)
50V DC
Approx
-0.25A
1.0Ω
NI
(+)
Oscilloscope
(Note 1)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
ES1A – ES1J
2 of 3
© 2002 Won-Top Electronics
ORDERING INFORMATION
Product No.!
ES1A-T1
Package Type
Shipping Quantity
SMA
SMA
SMA
SMA
SMA
SMA
SMA
SMA
SMA
SMA
SMA
SMA
SMA
SMA
1800/Tape & Reel
7500/Tape & Reel
1800/Tape & Reel
7500/Tape & Reel
1800/Tape & Reel
7500/Tape & Reel
1800/Tape & Reel
7500/Tape & Reel
1800/Tape & Reel
7500/Tape & Reel
1800/Tape & Reel
7500/Tape & Reel
1800/Tape & Reel
7500/Tape & Reel
ES1A-T3
ES1B-T1
ES1B-T3
ES1C-T1
ES1C-T3
ES1D-T1
ES1D-T3
ES1E-T1
ES1E-T3
ES1G-T1
ES1G-T3
ES1J-T1
ES1J-T3
Products listed in
are WTE
devices.
Preferred
bold
!T1 suffix refers to a 7” reel. T3 suffix refers to a 13” reel.
Shipping quantity given is for minimum packing quantity only. For minimum order
quantity, please consult the Sales Department.
RECOMMENDED FOOTPRINT
0.050 MIN
(1.27 MIN)
0.058 MIN
(1.47 MIN)
0.083 MAX
(2.11 MAX)
inches(mm)
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any
responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to
manufacturer. WTE reserves the right to change any or all information herein without further notice.
: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life
WARNING
support devices or systems without the express written approval.
Won-Top Electronics Co., Ltd.
No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan
Phone: 886-7-822-5408 or 886-7-822-5410
Fax: 886-7-822-5417
Email: sales@wontop.com
Internet: http://www.wontop.com
Wepoweryoureveryday.
ES1A – ES1J
3 of 3
© 2002 Won-Top Electronics
相关型号：
ES1BE-TP
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMAE, 2 PIN
MCC
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