ES1BBF3 [YANGJIE]

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ES1BBF3
型号: ES1BBF3
厂家: YANGZHOU YANGJIE ELECTRONIC CO., LTD    YANGZHOU YANGJIE ELECTRONIC CO., LTD
描述:

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文件: 总5页 (文件大小:443K)
中文:  中文翻译
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RoHS  
ES1AB THRU ES1KB  
COMPLIANT  
Surface Mount Super Fast Recovery Rectifier  
Features  
Low profile package  
● Ideal for automated placement  
Glass passivated chip junction  
● High forward surge capability  
Super Fast reverse recovery time  
Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
Typical Applications  
For use in high frequency rectification of power  
supplies, inverters, converters, and freewheeling diodes for  
consumer and telecommunication.  
Mechanical Data  
ackage: DO-214AA (SMB  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant, halogen-free  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
Cathode line denotes the cathode end  
Polarity:  
(T =25Unless otherwise specified  
Maximum Ratings  
a
ES1AB ES1BB ES1CB ES1DB ES1FB ES1GB ES1HB ES1JB ES1KB  
PARAMETER  
SYMBOL  
UNIT  
ES1AB ES1BB ES1CB ES1DB ES1FB ES1GB ES1HB ES1JB ES1KB  
Device marking code  
V
V
A
50  
100  
150  
200  
300  
1.0  
400  
500  
600  
800  
Repetitive peak reverse voltage  
RRM  
Average rectified output current  
@60Hz sine wave, resistance load,  
TL (Fig.1)  
I
O
Surge(non-repetitive)forward current  
@60Hz half-sine wave,1 cycle, Ta=25  
I
A
30  
FSM  
T
-55~+150  
-55~+150  
Storage temperature  
Junction temperature  
stg  
T
j
T =25Unless otherwise specified)  
Electrical Characteristics  
a
TEST  
CONDITIONS  
ES1AB ES1BB ES1CB ES1DB ES1FB ES1GB ES1HB ES1JB ES1KB  
PARAMETER  
SYMBOL  
UNIT  
V
Maximum instantaneous  
forward voltage drop per diode  
V
F
I
=1.0A  
FM  
0.95  
1.3  
1.7  
1.85  
IF=0.5A,IR=1.0A,  
Irr=0.25A  
Maximum reverse recovery time  
t
rr  
ns  
35  
T =25℃  
5.0  
a
Maximum DC reverse current at  
rated DC blocking voltage per  
diode @ VRM=VRRM  
I
μA  
RRM  
T =125℃  
a
100  
1 / 5  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
S-S784  
Rev. 2.2,06-Jun-16  
www.21yangjie.com  
ES1AB THRU ES1KB  
Thermal Characteristics T =25Unless otherwise specified)  
a
ES1AB ES1BB ES1CB ES1DB ES1FB ES1GB ES1HB ES1JB ES1KB  
PARAMETER  
SYMBOL  
UNIT  
851)  
201)  
R
θJ-A  
/W  
Thermal resistance  
R
θJ-L  
Note:  
(1)  
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas  
Characteristics (Typical)  
FIG1Io-TL Curve  
FIG2Surge Forward Current Capability  
1.2  
30  
25  
20  
15  
10  
5
1.0  
0.8  
0.6  
0.4  
8.3ms Single Half Sine Wave  
0.2  
Resistive or Inductive Load  
P.C.B. Mounted on 0.2"×0.2"  
(5.0mm×5.0mm)Copper Pad Areas  
0
0
80  
90  
100  
110  
120  
130  
140  
1
100  
Numb1e0r of Cycles  
150  
Lead Temperature()  
FIG4:Typical Reverse Characteristics  
FIG3: Forward Voltage  
6
4
1000  
100  
10  
ES1AB~ES1DB  
2
1
ES1FB~  
ES1GB  
0.5  
Tj=125  
ES1HB-ES1JB  
ES1KB  
0.1  
1
0.05  
Tj=25℃  
0.02  
0.01  
Ta=25  
0.1  
1.8  
Instantaneous Forward Voltage(2V.)0  
Percent of Rated Peak Re6v0erse Voltage(%)  
0.4  
0.8  
1.2  
1.6  
2.4  
0
20  
40  
80  
100  
2 / 5  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
S-S784  
Rev. 2.2,06-Jun-16  
www.21yangjie.com  
ES1AB THRU ES1KB  
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time  
I
D
trr  
IF  
RL  
IF  
VR  
t
0
IRR  
IR  
Ordering Information (Example)  
PACKING  
MINIMUM  
PACKAGE(pcs)  
INNER BOX  
QUANTITY(pcs)  
OUTER CARTON  
QUANTITY(pcs)  
DELIVERY  
MODE  
PREFERED P/N  
UNIT WEIGHT(g)  
CODE  
ES1AB-ES1JB  
ES1AB-ES1JB  
ES1AB-ES1JB  
F1  
Approximate 0.096  
Approximate 0.096  
Approximate 0.096  
3000  
750  
6000  
48000  
24000  
16000  
13” reel  
7” reel  
7” reel  
F2  
F3  
3000  
2000  
500  
Outline Dimensions  
DO-214AA(SMB)  
DO-214AA(SMB)  
Min  
Max  
Dim  
A
1.85  
3.30  
4.25  
1.99  
5.21  
0.90  
0.10  
0.15  
2.15  
3.94  
A
B
B
4.75  
2.61  
5.59  
1.41  
0.20  
0.31  
C
C
D
E
F
D
G
H
G
H
F
E
Dimensions in millimeters  
3 / 5  
S-S784  
Rev. 2.2,06-Jun-16  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  
ES1AB THRU ES1KB  
■ Suggested pad layout  
DO-214AA(SMB)  
Millimeters  
P2  
Dim  
P1  
6.8  
4.3  
1.8  
2.5  
2.3  
P2  
P3  
Q2  
Q1  
P3  
P1  
Q1  
Q2  
Dimensions in millimeters  
4 / 5  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
S-S784  
Rev. 2.2,06-Jun-16  
www.21yangjie.com  
ES1AB THRU ES1KB  
Disclaimer  
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the  
right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design  
or otherwise.  
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with  
equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as  
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety  
devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use  
of sale.  
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website  
http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance.  
5 / 5  
S-S784  
Rev. 2.2,06-Jun-16  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  

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