BY550-1000-T3-LF [WTE]

Rectifier Diode, 1 Phase, 1 Element, 5A, 1000V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2;
BY550-1000-T3-LF
型号: BY550-1000-T3-LF
厂家: WON-TOP ELECTRONICS    WON-TOP ELECTRONICS
描述:

Rectifier Diode, 1 Phase, 1 Element, 5A, 1000V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2

二极管
文件: 总2页 (文件大小:56K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GALAXY ELECTRICAL  
BY550-50 --- BY550-1000  
BL  
VOLTAGE RANGE: 50 --- 1000 V  
CURRENT: 5.0 A  
PLASTIC SILICON RECTIFIER  
FEATURES  
Low cost  
Diffused junction  
DO - 27  
Low leakage  
Low forward voltage drop  
High current capability  
Easilycleaned witn Freon,Alcohol,lsopropanol  
and similar solvents  
The plastic material carries U/L recognition 94V-0  
MECHANICAL DATA  
Case:JEDEC DO-27,molded plastic  
Terminals: Axial lead ,solderable per  
MIL- STD-202,Method 208  
Polarity: Color band denotes cathode  
Weight: 0.041 ounces, 1.15 grams  
Mounting position: Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
BY  
BY  
BY  
BY  
BY  
BY  
BY  
UNITS  
550-50 550-100  
550-200 550-400 550-600 550-800 550-1000  
V
V
V
Maximumrecurrent peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
VRRM  
VRMS  
VDC  
MaximumDC blocking voltage  
100  
1000  
Maximumaverage forw ard rectified current  
A
5.0  
IF(AV)  
9.5mmlead length,  
@TA=75  
Peak forw ard surge current  
A
IFSM  
8.3ms single half-sine-w ave  
300.0  
superimposed on rated load @T =125  
J
Maximuminstantaneous forw ard voltage  
V
A
1.1  
VF  
IR  
@ 5.0 A  
Maximumreverse current  
@TA=25  
10.0  
100.0  
at rated DC blocking voltage @TA=100  
pF  
Typical junction capacitance  
Typical thermal resistance  
(Note1)  
(Note2)  
80  
CJ  
RθJA  
TJ  
15  
/ W  
Operating junction temperature range  
Storage temperature range  
- 55 ---- + 150  
- 55 ---- + 150  
TSTG  
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2. Thermal resistance from junction to ambient.  
www.galaxycn.com  
BLGALAXY ELECTRICAL  
1.  
Document Number 0260031  
RATINGS AND CHARACTERISTIC CURVES  
BY550-50 --- BY550-1000  
FIG.1 -- TYPICAL FORWARD CHARACTERISTICS  
FIG.2 -- TYPICAL FORWARD DERATING CURVE  
10  
1.5  
1.25  
1.0  
1.0  
TJ=250 C  
Pulse Width  
0.75  
Single Phase  
Half Wave 60H  
Resistive or  
=300us  
Z
0.1  
0.5  
Inductive Load  
0.25  
0
25  
50  
75  
100 125  
150  
175  
.01  
0.4  
0.6  
0.8 1.0  
1.2  
1.4 1.6  
INSTANTANEOUS FORWARD VOLTAGE, VOLTS  
AMBIENT TEMPERATURE,  
FIG.3 -- PEAK FORWARD SURGE CURRENT  
FIG.4--TYPICAL JUNCTION CAPACITANCE  
1000  
450  
600  
400  
400  
TJ=125  
TJ=25  
8.3ms Single Half  
Sine-Wave  
350  
200  
100  
300  
250  
200  
40  
150  
20  
10  
100  
50  
.1  
.2  
.4  
1.0  
2
4
10  
20  
40  
100  
1
2
4
8 10 20  
40 6080100  
NUMBER OF CYCLES AT60Hz  
REVERSE VOLTAGE,VOLTS  
www.galaxycn.com  
2.  
BLGALAXY ELECTRICAL  
Document Number 0260031  

相关型号:

BY550-1000-TB

5.0A STANDARD DIODE
WTE

BY550-200

5.0 AMP.SILICON RECTIFIERS
GOOD-ARK

BY550-200

SILICON RECTIFIER DIODES
EIC

BY550-200

Silicon Rectifiers
DIOTEC

BY550-200

Standard silicon rectifier diodes
SEMIKRON

BY550-200

PLASTIC SILICON RECTIFIER
WTE

BY550-200

SILICON RECTIFIER DIODES
SYNSEMI

BY550-200

GENERAL PURPOSE PLASTIC RECTIFIER
JINANJINGHENG

BY550-200

Plastic Silicon Rectifiers
LGE

BY550-200

5.0 Amps Miniature PLASTIC SILICON RECTIFIERS Diffused junction
FCI

BY550-200

SOFT RECOVERY FAST-SWITCHING PLASTIC RECTIFIERS
TAYCHIPST

BY550-200(G)

暂无描述
LGE