BY550-200 [EIC]

SILICON RECTIFIER DIODES; 硅整流二极管
BY550-200
型号: BY550-200
厂家: EIC DISCRETE SEMICONDUCTORS    EIC DISCRETE SEMICONDUCTORS
描述:

SILICON RECTIFIER DIODES
硅整流二极管

整流二极管
文件: 总2页 (文件大小:20K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SILICON RECTIFIER DIODES  
BY550-50 ~ BY550-1000  
PRV : 50 - 1000 Volts  
Io : 5.0 Amperes  
DO - 201AD  
FEATURES :  
* High current capability  
* High surge current capability  
* High reliability  
1.00 (25.4)  
0.21 (5.33)  
MIN.  
0.19 (4.83)  
* Low reverse current  
* Low forward voltage drop  
0.375 (9.53)  
0.285 (7.24)  
MECHANICAL DATA :  
1.00 (25.4)  
* Case : DO-201AD Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
0.052 (1.32)  
MIN.  
0.048 (1.22)  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
* Weight : 1.21 grams  
Dimensions in inches and ( millimeters )  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
BY550 BY550 BY550 BY550 BY550 BY550 BY550  
RATING  
SYMBOL  
UNIT  
1000 Volts  
700 Volts  
- 50  
- 100 - 200 - 400 - 600 - 800 - 1000  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
35  
50  
Maximum DC Blocking Voltage  
100  
1000 Volts  
Maximum Average Forward Current  
0.375"(9.5mm) Lead Length Ta = 60°C  
Peak Forward Surge Current  
IF  
5.0  
Amps.  
8.3ms Single half sine wave Superimposed  
on rated load (JEDEC Method)  
IFSM  
VF  
300  
0.95  
20  
Amps.  
Volts  
mA  
Maximum Forward Voltage at IF = 5.0 Amps.  
Maximum DC Reverse Current  
at rated DC Blocking Voltage  
Ta = 25 °C  
Ta = 100 °C  
IR  
IR(H)  
CJ  
50  
mA  
Typical Junction Capacitance (Note1)  
Typical Thermal Resistance (Note2)  
Junction Temperature Range  
50  
pF  
RqJA  
TJ  
18  
°C/W  
°C  
- 65 to + 175  
- 65 to + 175  
Storage Temperature Range  
TSTG  
°C  
Notes :  
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC  
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.  
UPDATE : MAY 27, 1998  
RATING AND CHARACTERISTIC CURVES ( BY550-50 - BY550-1000 )  
FIG.1 - DERATING CURVE FOR OUTPUT  
RECTIFIED CURRENT  
FIG.2 - MAXIMUM NON-REPETITIVE PEAK  
FORWARD SURGE CURRENT  
300  
240  
180  
120  
60  
5
4
3
2
Ta = 25 °C  
1
0
0
0
25  
50  
75  
100  
125  
150  
175  
1
2
4
6
10 20  
40 60 100  
NUMBER OF CYCLES AT 60Hz  
AMBIENT TEMPERATURE, ( °C)  
FIG.3 - TYPICAL FORWARD CHARACTERISTICS  
FIG 4 . - TYPICAL JUNCTION CAPACITANCE  
100  
50  
100  
10  
TJ = 25 °C  
10  
5
Pulse Width = 300 ms  
2% Duty Cycle  
TJ = 25 °C  
1
1.0  
0.1  
1
2
4
10  
20  
40  
100  
REVERSE VOLTAGE, VOLTS  
FIG. 5 - TYPICAL REVERSE CHARACTERISTICS  
10  
0.01  
0.4 0.6  
0
0.2  
0.8 1.0 1.2 1.4 1.6 1.8 2.0  
Ta = 100 °C  
FORWARD VOLTAGE, VOLTS  
1.0  
0.1  
Ta = 25 °C  
0.01  
0
20  
40  
60  
80  
100  
120  
140  
PERCENT OF RATED REVERSE  
VOLTAGE, (%)  

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