BY550-400 [SYNSEMI]

SILICON RECTIFIER DIODES; 硅整流二极管
BY550-400
型号: BY550-400
厂家: SYNSEMI, INC.    SYNSEMI, INC.
描述:

SILICON RECTIFIER DIODES
硅整流二极管

整流二极管
文件: 总2页 (文件大小:34K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SILICON RECTIFIER DIODES  
DO - 201AD  
BY550-50 ~ BY550-1000  
PRV : 50 - 1000 Volts  
Io : 5.0 Amperes  
FEATURES :  
1.00 (25.4)  
0.21 (5.33)  
MIN.  
* High current capability  
* High surge current capability  
* High reliability  
0.19 (4.83)  
0.375 (9.53)  
0.285 (7.24)  
* Low reverse current  
* Low forward voltage drop  
* Pb / RoHS Free  
1.00 (25.4)  
0.052 (1.32)  
MIN.  
MECHANICAL DATA :  
0.048 (1.22)  
* Case : DO-201AD Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
Dimensions in inches and ( millimeters )  
* Weight : 0.929 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
BY550 BY550 BY550 BY550 BY550 BY550 BY550  
RATING  
SYMBOL  
UNIT  
- 50  
- 100  
- 200  
- 400  
- 600  
- 800  
- 1000  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
100  
200  
400  
600  
800  
1000  
V
V
V
35  
50  
70  
140  
200  
280  
400  
420  
600  
560  
800  
700  
Maximum DC Blocking Voltage  
100  
1000  
Maximum Average Forward Current  
0.375"(9.5mm) Lead Length Ta = 60°C  
Peak Forward Surge Current  
IF  
5.0  
A
IFSM  
300  
A
8.3ms Single half sine wave Superimposed  
on rated load (JEDEC Method)  
Maximum Forward Voltage at IF = 5.0 Amps.  
VF  
IR  
1.1  
20  
50  
50  
18  
V
μA  
Maximum DC Reverse Current  
at rated DC Blocking Voltage  
Ta = 25 °C  
Ta = 100 °C  
IR(H)  
CJ  
μA  
Typical Junction Capacitance (Note1)  
Typical Thermal Resistance (Note2)  
Junction Temperature Range  
pF  
°C/W  
°C  
RθJA  
TJ  
- 65 to + 175  
- 65 to + 175  
Storage Temperature Range  
TSTG  
°C  
Notes :  
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC  
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.  
Page 1 of 2  
Rev. 03 : March 31, 2005  
RATING AND CHARACTERISTIC CURVES ( BY550-50 - BY550-1000 )  
FIG.1 - DERATING CURVE FOR OUTPUT  
RECTIFIED CURRENT  
FIG.2 - MAXIMUM NON-REPETITIVE PEAK  
FORWARD SURGE CURRENT  
300  
240  
180  
120  
5
Ta = 25 °C  
4
3
2
1
0
60  
0
0
25  
50  
75  
100  
125  
150  
175  
1
2
4
6
10 20  
40  
60 100  
NUMBER OF CYCLES AT 60Hz  
AMBIENT TEMPERATURE, ( °C)  
FIG.3 - TYPICAL FORWARD CHARACTERISTICS  
FIG 4 . - TYPICAL JUNCTION CAPACITANCE  
100  
50  
100  
10  
TJ = 25 °C  
10  
5
Pulse Width = 300 μs  
2% Duty Cycle  
1
1.0  
0.1  
1
2
4
10  
20  
40  
100  
TJ = 25 °C  
REVERSE VOLTAGE, VOLTS  
FIG. 5 - TYPICAL REVERSE CHARACTERISTICS  
10  
0.01  
0.4 0.6  
0
0.2  
0.8 1.0  
1.2 1.4 1.6 1.8 2.0  
Ta = 100 °C  
FORWARD VOLTAGE, VOLTS  
1.0  
0.1  
Ta = 25 °C  
0.01  
20  
40  
60  
80  
0
100  
140  
120  
PERCENT OF RATED REVERSE  
VOLTAGE, (%)  
Page 2 of 2  
Rev. 03 : March 31, 2005  

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