MMST2907A [WINNERJOIN]
TRANSISTOR (PNP); 晶体管( PNP )型号: | MMST2907A |
厂家: | SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
描述: | TRANSISTOR (PNP) |
文件: | 总1页 (文件大小:131K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RoHS
MMST2907A
SOT-323
1. BASE
MMST2907A
TRANSISTOR (PNP)
2. EMITTER
FEATURES
3. COLLECTOR
1. 25¡ À0. 05
Power dissipation
PCM:
0.2
W (Tamb=25℃)
2. 30¡ À0. 05
Collector current
ICM:
-0.6
-60
A
V
Collector-base voltage
V(BR) CBO
:
Unit: mm
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic= -10µA, IE=0
Ic= -10mA, IB=0
MIN
-60
-60
-5
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
IE= -10µA, IC=0
VCB= -50V, IE=0
-0.01
-0.05
-0.01
300
µA
µA
µA
ICEO
VCE= -35V, IB=0
Collector cut-off current
IEBO
VEB= -3V, IC=0
Emitter cut-off current
hFE(1)
VCE=-10V, IC= -150mA
VCE= -10V, IC=-1mA
IC=-500 mA, IB= -50mA
IC= -500 mA, IB= -50mA
100
100
DC current gain
hFE(2)
VCE(sat)
VBE(sat)
-0.6
-1.2
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE= -20V, IC= -50mA
f=100MHz
200
MHz
pF
Transition frequency
Output Capacitance
fT
VCB=-10V, IE= 0
f=1MHz
8
Cob
10
25
80
nS
nS
nS
Delay time
Rise time
td
tr
VCC=-30V, IC=-150mA
VBE(off)=-0.5V, IB1=-15mA
Storage time
WEJ ELECTRtS ONIC CO.,LTD
VCC=-30V, IC=-150mA
IB1= IB2= -15mA
30
nS
Fall time
tf
Marking: K3F
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
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