1SS400 [WINNERJOIN]
High Speed SWITCHING Diode; 高速开关二极管
| 型号： | 1SS400 |
| 厂家： | 
SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
| 描述： | High Speed SWITCHING Diode |
| 文件： | 总2页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
1SS400
FEATURES
Small surface mounting type
High Speed
1SS400 High Speed SWITCHING Diodes
High reliability with high surge current handing capability
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Parameter
Peak reverse voltage
DC reverse voltage
Peak forward current
Mean rectifying current
Surge current (1s)
Symbol
VRM
VR
Limits
90
Unit
V
80
V
225
mA
mA
mA
℃
IFM
100
IO
500
Isurge
Tj
125
Junction temperature
Storage temperature
-55~+125
℃
Tstg
Electrical Ratings @TA=25℃
Parameter
Symbol Min. Typ. Max. Unit
Conditions
1.2
0.1
V
IF=100mA
VR=80V
Forward voltage
Reverse current
VF
IR
μA
WEJ ELECTRONIC CO.,LTD
3.0
4
pF
VR=0.5V,f=1MHZ
Capacitance between terminals
Reverse recovery time
CT
trr
VR=6V,IF=10mA,RL=100Ω
ns
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
RoHS
1SS400
!Electrical characteristic curves (Ta = 25°C)
1
100m
10m
1m
1m
0.1m
10µ
1µ
10
5
Ta=125°C
2
1
Ta=75°C
Ta=25°C
0.5
100n
10n
1n
C
°
100µ
25
0.2
0.1
=−
Ta
10µ0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
FORWARD VOLTAGE : V (V)
0
20
40
60
80
100
(V)
120
0
2
4
6
8
10
12
14
REVERSE VOLTAGE : V (V)
R
F
REVERSE VOLTAGE : VR
Fig.1 Forward characteristics
Fig.2 Reverse characteristics
Fig.3 Capacitance between terminals
100
50
3
2
1
0
PULSE
Single pulse
V
R
=6V
1/10IR
I
rr
=
20
10
5
2
1
0
10
20
30
0.1
1
10
100
1 000 10 000
FORWARD CURRENT : I
F
(mA)
PULSE WIDTH : Tw (ms)
Fig.4 Reverse recovery time
characteristics
Fig.5 Surge current characteristics
0.01µF
D.U.T.
5kΩ
PULSE GENERATOR
SAMPLING
OSCILLOSCOPE
50Ω
OUTPUT 50Ω
Fig.6 Reverse recovery time (trr) measurement circuit
WEJ ELECTRONIC CO.,LTD
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
相关型号：
1SS400-T1-LF
Rectifier Diode, 1 Element, 0.1A, 90V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
WTE
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