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2SD870 [Wing Shing]

SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION); 硅扩散型功率晶体管（概述）
2SD870
型号： 2SD870
厂家： WING SHING COMPUTER COMPONENTS    WING SHING COMPUTER COMPONENTS
描述：

SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
硅扩散型功率晶体管（概述）

晶体 晶体管
文件： 总1页 (文件大小：196K)
中文：  中文翻译
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2SD870  
SILICON DIFFUSED POWER TRANSISTOR  
GENERAL DESCRIPTION  
Highvoltage,high-speed switching npn transistors in a  
metal envelope with integrated efficiency diode,prim-  
arily for use in horizontal deflection circuites of colour  
television receivers  
TO-3  
QUICK REFERENCE DATA  
SYMBOL  
VCESM  
VCEO  
IC  
ICM  
Ptot  
VCEsat  
Icsat  
VF  
PARAMETER  
CONDITIONS  
MIN  
MAX  
1500  
600  
5
UNIT  
V
Collector-emitter voltage peak value  
Collector-emitter voltage (open base)  
Collector current (DC)  
VBE = 0V  
-
-
-
-
-
-
V
A
Collector current peak value  
Total power dissipation  
Collector-emitter saturation voltage  
Collector saturation current  
Diode forward voltage  
A
Tmb 25  
50  
5
W
V
IC = 4.0A; IB = 0.8A  
f = 16KHz  
A
IF = 4.0A  
2
V
Fall time  
ICsat = 4.0A; f = 16KHz  
1.0  
s
tf  
LIMITING VALUES  
SYMBOL  
VCESM  
VCEO  
IC  
PARAMETER  
CONDITIONS  
MIN  
MAX  
1500  
600  
5
UNIT  
V
Collector-emitter voltage peak value  
Collector-emitter voltage (open base)  
Collector current (DC)  
VBE = 0V  
-
-
V
-
A
Collector current peak value  
Base current (DC)  
-
A
ICM  
IB  
-
1
A
Base current peak value  
Total power dissipation  
Storage temperature  
-
-
A
IBM  
Ptot  
Tstg  
Tj  
Tmb 25  
50  
W
-55  
-
150  
150  
Junction temperature  
ELECTRICAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
MAX  
0.1  
UNIT  
mA  
Collector-emitter cut-off current  
VBE = 0V; VCE = VCESMmax  
VBE = 0V; VCE = VCESMmax  
Tj = 125  
-
-
ICE  
ICES  
0.2  
mA  
Collector-emitter sustaining voltage  
IB = 0A; IC = 100mA  
L = 25mH  
-
V
VCEOsust  
Collector-emitter saturation voltages  
Base-emitter satuation voltage  
DC current gain  
IC = 4.0A; IB =0.8A  
IC = 4.0A; IB = 0.8A  
IC = 1.0A; VCE = 5V  
IF = 4.0A  
-
-
5
1.5  
30  
2
V
V
VCEsat  
VBEsat  
hFE  
VF  
fT  
Cc  
8
Diode forward voltage  
V
MHz  
pF  
s
Transition frequency at f = 1MHz  
Collector capacitance at f = 1MHz  
Switching times(16KHz line deflecton circuit)  
Turn-off storage time Turn-off fall time  
IC = 0.1A; VCE = 10V  
VCB = 10V  
1
-
165  
-
IC=4A,IB1=-IB2=0.8A,VCC=105V  
IC=4A,IB1=-IB2=0.8A,VCC=105V  
ts  
tf  
1.0  
s
Wing Shing Computer Components Co., (H.K.)Ltd.  
Homepage: http://www.wingshing.com  
Tel:(852)2341 9276 Fax:(852)2797 8153  
E-mail: wsccltd@hkstar.com  

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