2SD874 [KEXIN]
Silicon NPN Epitaxial Planar Type; NPN硅外延平面型
| 型号： | 2SD874 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Silicon NPN Epitaxial Planar Type |
| 文件： | 总2页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Silicon NPN Epitaxial Planar Type
2SD874,2SD874A
Features
Large collector power dissipation PC.
Low collector-emitter saturation voltage VCE(sat).
Mini power type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine packing.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
VCBO
Rating
Unit
V
2SD874
2SD874A
2SD874
2SD874A
30
Collector-base voltage
60
V
25
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
Collector current
VEBO
IC
5
V
1
A
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
ICP
PC
Tj
1.5
1
A
W
150
Tstg
-55 to +150
1
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SMD Type
Transistors
2SD874,2SD874A
Electrical Characteristics Ta = 25
Parameter
Symbol
VCBO
Testconditons
Min
30
60
25
50
5
Typ
Max
Unit
V
2SD874
Collector-base voltage
Collector-emitter voltage
IC = 10 ìA, IE = 0
IC = 2 mA, IB = 0
2SD874A
2SD874
V
V
VCEO
2SD874A
V
Emitter-base voltage
VEBO
ICBO
hFE
IE = 10ìA, IC = 0
V
Collector-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCB = 20 V, IB = 0
VCE = 10 V, IC = 500 mA
0.1
340
0.4
1.2
ìA
?
85
VCE(sat) IC = 500 mA, IB = 50 mA
VBE(sat) IC = 500 mA, IB = 50 mA
0.2
0.85
200
V
V
fT
VCB = 10 V, IE = -50 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
MHz
pF
Collector output capacitance
Cob
20
hFE Classification
2SD874:Z, 2SD874A:Y
Marking
Rank
hFE
Q
R
S
85 170
120 240
170 340
2
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相关型号：
2SD874-Q-TP
Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3
MCC
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