ESD5Z3V3-2/TR [WILLSEMI]
1-Line Uni-directional Transient Voltage Suppressors;
| 型号： | ESD5Z3V3-2/TR |
| 厂家： | 
WILLSEMI |
| 描述： | 1-Line Uni-directional Transient Voltage Suppressors 二极管 |
| 文件： | 总4页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESD5Z3V3
ESD5Z3V3
1-Line Uni-directional Transient Voltage Suppres-
sors
Http//:www.willsemi.com
Descriptions
The ESD5Z3V3 is a transient voltage suppressors
(TVS) which provide a very high level protection for
sensitive electronic components that may be subjected
to electrostatic discharge (ESD). It is designed to re-
place multilayer varistors (MLV) in consumer equip-
ments applications such as mobile phone, notebook,
PAD, STB, LCD TV etc.
SOD-523
The ESD5Z3V3 was past ESD transient voltage
up to ±30kV (contact) according to IEC61000-4-2 and
withstand peak current up to 9A for 8/20us pulse ac-
cording to IEC61000-4-5.
Pin configuration (Top view)
The ESD5Z3V3 is available in SOD-523 package.
Standard products are Pb-free and Halogen-free.
5
*
SOD-523
Features
Working voltage
: 3.3V
5
*
= Device code
= Month code (A~Z)
Marking
Peak power (tp=8/20us)
ESD protection
: 108W
IEC61000-4-2 (Contact)
IEC61000-4-2 (Air)
Low leakage current
Small package
: ±30kV
: ±30kV
Order information
Device
Package
Shipping
Applications
ESD5Z3V3-2/TR SOD-523 3000/Tape&Reel
Mobile phone
PAD
Notebook
STB
LCD TV
Digital camera
Other electronics equipments
Will Semiconductor Ltd.
1
Dec, 2012 - Rev. 2.0
ESD5Z3V3
Absolute maximum ratings
Parameter
Peak pulse power (tp=8/20us)
Peak pulse current (tp=8/20us)
ESD voltage IEC61000-4-2 air
ESD voltage IEC61000-4-2 contact
Junction temperature
Symbol
Ppk
Rating
108
Unit
W
Ipp
9
A
±30
VESD
kV
±30
TJ
TOP
TL
125
oC
oC
oC
oC
Operating temperature
-40~85
260
Lead temperature
Storage temperature
TSTG
-55~150
Electronics characteristics (Ta=25 oC, unless otherwise noted)
Parameter
Symbol
Condition
Min.
Typ.
Max.
3.3
0.1
10
Unit
V
Reverse maximum working voltage
VRWM
V
RWM=1V
uA
uA
V
Reverse leakage current
IR
VRWM=4.2V
Reverse breakdown voltage
Forward voltage
VBR
VF
IT=1mA
4.8
5.2
0.8
5.4
1.25
6.5
12
IF=-10mA
0.55
V
Ipp=1A tp=8/20us
Ipp=9A tp=8/20us
F=1MHz, VR=0V
V
Clamping voltage
VC
C
V
Junction capacitance
70
90
pF
110
100
90
80
70
60
50
40
30
20
10
0
100
90
Front times=1.25*( t90-t10) =8us
Duration=20us
10
t
60ns
30ns
tr=0.7~1ns
0
5
10
15
20
25
30
35
40
Peak Pulse time (us)
8/20us waveform
IEC61000-4-2 waveform
Dec, 2012 - Rev. 2.0
Will Semiconductor Ltd.
2
ESD5Z3V3
Typical characteristics (Ta=25oC, unless otherwise noted)
15
10
5
80
70
60
50
40
30
Pulse waveform: tp=8/20us
Fsignal =1MHz
Vsignal =50mVrms
0
0
3
6
9
0
1
2
3
4
Ipp - Peak pulse current (A)
VR - Reverse voltage (V)
Capacitance vs. Reveres voltage
Clamping voltage vs. Peak pulse current
1000
100
10
100
80
60
40
20
0
1
0
25
50
75
100
125
150
1
10
100
1000
TA - Ambient temperature (oC)
Pulse Duration(us)
Non-Repetitive Peak Pulse Power vs. Pulse time
Power derating vs. Temperature
ESD Clamping
ESD Clamping
(IEC61000-4-2 +8kV contact)
(IEC61000-4-2 -8kV contact)
Will Semiconductor Ltd.
3
Dec, 2012 - Rev. 2.0
ESD5Z3V3
Package outline dimensions
SOD-523
Dimensions in millimeter
Symbol
Min.
0.510
0.500
0.250
0.080
0.750
1.100
1.500
Typ.
Max.
0.770
0.700
0.350
0.150
0.850
1.300
1.700
A
A1
b
0.300
c
D
0.800
1.200
E
E1
E2
L
1.600
0.200 Ref.
0.010
0o
0.070
8o
θ
Recommend PCB Layout (Unit: mm)
Will Semiconductor Ltd.
4
Dec, 2012 - Rev. 2.0
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