ESD5Z5.0 [TYSEMI]
Peak Power up to 200 Watts 8 x 20 us Pulse Low Leakage; 峰值功率高达200瓦的8 ×20我们素菜低漏
| 型号： | ESD5Z5.0 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Peak Power up to 200 Watts 8 x 20 us Pulse Low Leakage |
| 文件： | 总2页 (文件大小：281K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
ESD5Z5.0
SOD-523
Unit: mm
■Features
●Peak Power up to 200 Watts @ 8 x 20 μs Pulse
+0.1
+0.1
1.2-0.1
0.6-0.1
●Low Leakage
+
-
●Response Time is Typically＜1 ns
● ESD Rating of Class 3 (> 16 kV) per Human Body Model
+0.1
1.6-0.1
0.77max
1
2
■Absolute Maximum Ratings Ta = 25℃
Parameter
ESD Voltage
Symbol
Rating
Unit
Per Human Body Model
Per Machine Model
16
400
KV
V
Electrostatic discharge
IEC61000-4-2 Air discharge
IEC61000-4-2 ContactAir discharge
Electrostatic discharge
IEC61000-4-4
30
30
KV
40
100
A
PD
TL
mW
Total Power Dissipation on FR?5 Board*1, @ TA = 25℃
Junction Temperature Range
260(10s)
150
℃
℃
℃
Lead Solder Temperature -Maximum
Storage Temperature Range
TJ
Tstg
-55 to +150
*1 FR-5 = 1.0 X 0.75 X 0.62 in.
■Electrical Characteristics (Ta = 25℃unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types)
VC(V)*1
@IPP=5.0A @Max IPP
VC(V)*1
IR(μA）
@ VRWM
VRWM(V)
IT
IPP(A) *1 PPK(W)*1
C( pF)
VBR（V)@ IT*2
Device
Max
5.0
Max
0.05
Min
6.2
mA
1.0
Typ
Max
18.6
Max
9.4
Max
174
Typ
80
ESD5Z5.0
11.6
* 1. Surge current waveform per Fig.1
2. VBR is measured with a pulse test current IT at an ambient temperature of 25℃.
■Marking
Marking
ZF
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Product specification
ESD5Z5.0
■ Typical Characteristics
I
I
F
V
V
V
BR RWM
C
V
I
V
R
T
F
I
I
PP
Uni−Directional TVS
100
90
80
70
60
50
40
30
20
t
r
PEAK VALUE I
@ 8 ms
RSM
PULSE WIDTH (t ) IS DEFINED
P
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE I /2 @ 20 ms
RSM
t
P
10
0
0
20
40
t, TIME (ms)
60
80
Figure 1. 8 x 20 ms Pulse Waveform
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相关型号：
ESD5Z5.0-30
Trans Voltage Suppressor Diode, 200W, 5V V(RWM), Unidirectional, 1 Element, Silicon, SC-79, 2 PIN
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