SS8550LT1R [WEITRON]
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| 型号： | SS8550LT1R |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | 暂无描述 晶体 晶体管 |
| 文件： | 总4页 (文件大小：405K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS8550LT1
PNP General Purpose Transistors
3
1
P b
Lead(Pb)-Free
2
SOT-23
Value
V
CEO
-25
-40
-6.0
-1500
625
5.0
200
SS8550LT1=Y2
-0.1
-100
-100
-25
-40
-6.0
u
u
u
-0.1
-0.1
-0.1
I
O
V
0
E=-20
-40
)
dc, E=
-5.0
WEITRON
http://www.weitron.com.tw
SS8550LT1
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted) (Countinued)
A
Characteristics
Symbol
Unit
Max
Min
ON CHARACTERISTICS
DC Current Gain
(1)
-
-
h
h
350
-
(I =-100 mAdc,V =1.0 Vdc)
C
(I =-800 mAdc,V =1.0 Vdc)
C
120
40
FE
FE
CE
(2)
CE
Collector-Emitter Saturation Voltage
(I =-800 mAdc, I =-80mAdc)
V
V
-
-
Vdc
Vdc
-0.5
-1.2
CE(sat)
C
B
Base-Emitter Saturation Voltage
(I =-800 mAdc, I =-80mAdc)
BE(sat)
C
B
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
f
T
-
-
MHz
100
(I =-50 mAdc,V =-10 Vdc, f=30MHz)
C
CE
CLASSIFICATION OF h
FE(1)
L
Rank
H
Range
120-200
200-350
WEITRON
http://www.weitron.com.tw
SS8550LT1
-0.5
-0.4
-0.3
-0.2
-0.1
1000
100
10
VCE = -1V
IB=-4.0mA
IB=-3.5mA
IB=-3.0mA
IB=-2.5mA
IB=-2.0mA
IB=-1.5mA
IB=-1.0mA
IB=-0.5mA
1
-0.1
-0.4
-0.8
-1.2
-1.6
-2.0
-1
-10
-100
-1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
FIG.1 Static Characteristic
FIG.2 DC Current Gain
-10000
-1000
-100
-100
-10
-1
IC=10IB
VCE = -1V
VBE(sat)
VCE(sat)
-10
-0.1
-0.1
-0.0
-1
-10
-100
-1000
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
FIG.3 Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
FIG.4 Base-Emitter On Voltage
1000
100
10
VCE=-10V
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
FIG.5 Current Gain Bandwidth Product
WEITRON
http://www.weitron.com.tw
SS8550LT1
SOT-23 Outline Dimension
SOT-23
A
Dim
A
B
C
D
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
B
C
TOP VIEW
E
D
G
G
H
J
K
L
E
H
K
L
M
J
M
WEITRON
http://www.weitron.com.tw
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