SS8550W [SECOS]
PNP Silicon General Purpose Transistor; PNP硅通用晶体管
| 型号： | SS8550W |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | PNP Silicon General Purpose Transistor |
| 文件： | 总2页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS8550W
PNP Silicon
General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
SOT-323
Min
FEATURES
Collector
Dim
A
B
C
D
G
H
J
Max
3
3
1.800 2.200
1.150 1.350
0.800 1.000
0.300 0.400
1.200 1.400
0.000 0.100
0.100 0.250
0.350 0.500
0.590 0.720
2.000 2.400
0.280 0.420
Power dissipation
PCM : 0.2 W
Collector Current
ICM : -1.5 A
Collector-base voltage
V(BR)CBO : - 40 V
1
1
2
Base
2
A
L
Emitter
3
S
C
Top View
B
K
L
Operating & storage junction temperature
1
2
Tj, Tstg : - 55OC ~ + 150O C
S
V
G
V
Marking : Y2
All Dimension in mm
H
J
D
K
ELECTRICAL CHARACTERISTICS ( Tamp.=25OC unless otherwise specified)
Parameter
Symbol
Test
conditions
IE=0
MIN
-40
-25
-5
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
V
V
(BR)CBO
Ic= 100
A
μ ，
V
Ic=-0.1mA IB=0
，
(BR)CEO
V
(BR)EBO
I =-100
A
I =0
μ ， C
E
ICBO
VCB=-40 V , IE=0
-0.1
A
A
A
μ
μ
μ
Collector cut-off current
ICEO
VCE=-20V, IB=0
-0.1
-0.1
350
Emitter cut-off current
IEBO
VEB= -5V, IC=0
HFE(1)
HFE(2)
VCE(sat)
VBE(sat)
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
IC=-800 mA, IB= -80mA
IC=-800 mA, IB= -80mA
120
40
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
-0.5
V
V
-1.2
VCE=-10V, IC=-50mA
f=30MHz
Transition frequency
output capacitance
fT
100
MHz
(VCB=-10V,IE=0,f=1MHz)
20
S)
&
ꢀ
RE
CLASSIFICATION OF hFE(1)
Rank
L
H
Range
120-200
200-350
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
SS8550W
PNP Silicon
General Purpose Transistor
Elektronische Bauelemente
Typical Characteristics
-0.5
-0.4
-0.3
-0.2
-0.1
1000
100
10
VCE = -1V
IB=-4.0mA
IB=-3.5mA
IB=-3.0mA
IB=-2.5mA
IB=-2.0mA
IB=-1.5mA
IB=-1.0mA
IB=-0.5mA
1
-0.4
-0.8
-1.2
-1.6
-2.0
-0.1
-1
-10
-100
-1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
-10000
-1000
-100
-100
-10
-1
IC=10IB
VCE = -1V
VBE(sat)
VCE(sat)
-10
-0.1
-0.0
-0.1
-1
-10
-100
-1000
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
1000
100
10
f=1MHz
IE=0
VCE=-10V
10
1
-1
-10
-100
-1000
-1
-10
-100
-1000
VCB[V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 2
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