BC878AW [WEITRON]
Transistor;BC846AW/BW/CW
BC847AW/BW/CW
BC848AW/BW/CW
COLLECTOR
3
General Purpose Transistor
NPN Silicon
3
1
1
BASE
2
SOT-323(SC-70)
2
EMITTER
( T =25 C unless otherwise noted)
M aximum R atings
A
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
V
65
45
30
80
50
30
6.0
6.0
5.0
BC846
CEO
Vdc
BC847
BC848
BC846
BC847
BC848
Collector-Base Voltage
Emitter-Base VOltage
Vdc
Vdc
V
V
CBO
BC846
BC847
BC848
EBO
I
C
Collector Current-Continuous
mAdc
100
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Total Device Dissipation FR-5 Board
P
D
150
2.4
mW
mW/ C
(Note 1.)T =25 C
A
Derate above 25 C
R
833
C/W
Thermal Resistance, Junction to Ambient
θ
JA
(Note 1.)
T
-55 to +150
Junction and Storage, Temperature Range
J,Tstg
C
Device Marking
BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F;BC847C=1G; BC848A=1J;
BC848B;=1K; BC848C=1L;
1.FR-5=1.0 x 0.75 x 0.062 in.
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BC846AW/BW/CW
BC847AW/BW/CW
BC848AW/BW/CW
WE ITR ON
(TA=25 C Unless Otherwise noted)
Electrical Characteristics
Typ
Characteristics
Symbol
Unit
Min
Max
Off Characteristics
-
-
-
-
-
-
65
45
30
BC846A Series
BC847A Series
BC848A Series
Collector-Emitter Breakdown Voltage
(I = 10mA)
C
V
V
V
V(BR)CEO
V(BR)CES
Collector-Emitter Breakdown Voltage
(I =10 uA ,V =0)
-
-
-
-
-
-
BC846A Series
BC847A Series
BC848A Series
80
50
30
C
EB
Collector-Base Breakdown Voltage
(I =10 uA)
C
V(BR)CBO
V(BR)EBO
-
-
-
-
-
-
BC846A Series
BC847A Series
BC848A Series
80
50
30
BC846A Series
BC847A Series
BC848A Series
-
-
-
-
-
-
Emitter-Base Breakdown Voltage
(I =1.0 uA)
E
6.0
6.0
5.0
V
Collector Cutoff Current (V =30V)
CB
-
-
-
-
nA
mA
15
5.0
ICBO
(V =30V, T =150 C)
CB
A
On Characteristics
DC Current Gain
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
90
150
270
hFE
-
-
-
-
-
-
(I = 10uA, V =5.0V)
C
CE
-
110
200
420
220
450
800
(I = 2.0mA, V =5.0V)
C CE
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C,
180
290
520
Collector-Emitter Saturation Voltage
V
-
-
-
-
0.25
0.6
(I = 10mA, IB=0.5mA)
VCE(sat)
VBE(sat)
C
C
(I = 100mA, I =5.0mA)
B
Base-Emitter Saturation Voltage
(I = 10mA, I =0.5mA)
V
V
-
-
-0.7
-0.9
-
-
C
C
B
B
(I = 100mA, I =5.0mA)
Base-Emitter On Voltage
(I = 2.0mA, V =5.0V)
VBE(on)
580
-
660
-
700
770
C
CE
(I = 10mA, VC =5.0V)
C
E
Small-signal Characteristics
Current-Gain-Bandwidth Product
(I = 10mA, VCE= 5.0Vdc, f=100MHz)
C
-
-
-
f
T
100
MHz
pF
Output Capacitance
C
-
4.5
10
obo
NF
(V = 10V, f=1.0MHz)
CB
Noise Figure
dB
(I = 0.2mA, V = 5.0Vdc,
C
CE
-
-
-
-
BC846A,B, BC847A,B,C, BC848A,B,C,
Rs=2.0 k ,
Ω
f=1.0 kHz, BW=200Hz)
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BC846AW/BW/CW
BC847AW/BW/CW
BC848AW/BW/CW
WE ITR ON
BC847 & BC848 Series
1.0
2.0
1.5
T =25 C
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
V
=10V
A
CE
T =25 C
A
V
@I /B =10
C C
BE(sat)
1.0
0.8
V
@V = 10V
CE
BE(ON)
0.6
0.4
0.3
V
@I /B =10
C C
(sat)
CE
0.2
0
0.1
0.2
0.5 1.0
2.0
5.0 10
20
50 100 200
0.2 0.3 0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mAdc)
Figure1.Normalized DC Current Gain
I
, COLLECTOR CURRENT (mAdc)
C
Firure2. "Saturation" And "On" Voltage
1.0
1.2
2.0
1.6
1.2
0.8
0.4
0
T =25 C
A
-55 C to +125 C
1.6
2.0
2.4
2.8
I
= 200mA
C
I
=
I
= 100mA
C
I
=-50mA
C
C
10mA
I
= 20mA
C
0.2
1.0
10
100
0.02
0.1
1.0
10
20
IC, COLLECTOR CURRENT (mA)
I , BASE CURRENT (mA)
Figure 3. Collector Saturation Region
B
Figure 4. Base-Emitter Temperature Coefficient
10
400
300
7.0
T =25 C
A
200
5.0
C
V
CE=10V
ib
TA= 25 C
100
80
3.0
2.0
60
C
ob
40
30
1.0
0.4
20
0.6 0.8 1.0
2.0
4.0
6.0 8.0 10
20
40
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
50
V
, REVERSE VOLTAGE (VOLTS)
I
COLLECTOR CURRENT (mAdc)
R
C,
Figure 5. Capacitances
Figure 6. Current-Gain- Bandwidth Product
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BC846AW/BW/CW
BC847AW/BW/CW
BC878AW/BW/CW
WE ITR ON
BC846 Series
1.0
T =25 C
A
V
T
=5V
CE
=25 C
0.8
0.6
0.4
0.2
A
V
@I /I =10
BE(sat)
C
B
2.0
1.0
0.5
V
@V =-5.0V
CE
BE
0.2
V
@I /I =10
CE(sat)
C
B
0
0.1 0.2
1.0
10
100
0.2
0.5
1.0
2.0
5.0
10
20
50 100 200
I
, COLLECTOR CURRENT (mA)
C
I
, COLLECTOR CURRENT(mA)
C
Figure 7.DC Current Gain
Figure 8. "ON" Voltage
1.0
2.0
T =25 C
A
1.4
1.8
2.2
2.6
3.3
1.6
1.2
0.8
0.4
0
20mA
50mA
100mA
200mA
q
for V
VB
BE
-55 C to 125 C
IC=
10mA
0.2
0.5
1.0
-2.0
5.0
10
20
50
100
200
0.02
0.05 0.1
0.2
0.5 1.0
2.0
5.0
10
20
I
, COLLECTOR CURRENT (mA)
I
, BASE CURRENT (mA)
B
C
Figure 9. Collector Saturation Region
Figure 10. Base-Emitter Temperature Coefficient
40
20
V
=5.0V
CE
T =25 C
500
T =25 C
A
A
C
200
100
50
ib
10
8.0
6.0
4.0
C
ob
20
2.0
1.0
5.0 10
50 100
0.1 0.2
0.5
1.0 2.0
5.0
10
20
50 100
I
, COLLECTOR CURRENT (mA)
C
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 12.Current-Gain-Bandwidth Product
Figure 11. Capacitance
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