BC879 [INFINEON]

NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage; NPN硅达林顿晶体管(高电流增益低集电极 - 发射极饱和电压
BC879
型号: BC879
厂家: Infineon    Infineon
描述:

NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage
NPN硅达林顿晶体管(高电流增益低集电极 - 发射极饱和电压

晶体 晶体管 达林顿晶体管 开关
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NPN Silicon Darlington Transistors  
BC 875  
… BC 879  
High current gain  
Low collector-emitter saturation voltage  
Complementary types: BC 876, BC 878  
BC 880 (PNP)  
Package1)  
Type  
Marking  
Ordering Code  
Pin Configuration  
1
2
3
BC 875  
BC 877  
BC 879  
C62702-C853  
C62702-C854  
C62702-C855  
E
C
B
TO-92  
Maximum Ratings  
Parameter  
Symbol Values  
Unit  
BC 875  
BC 877  
60  
BC 879  
80  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
CE0  
CB0  
EB0  
45  
V
60  
80  
100  
5
I
I
I
I
C
1
A
Peak collector current  
Base current  
CM  
2
B
100  
200  
0.8 (1)  
150  
mA  
Peak base current  
BM  
Total power dissipation, T  
C
= 90 ˚C2)  
P
tot  
W
Junction temperature  
Tj  
˚C  
Storage temperature range  
Tstg  
– 65 … + 150  
Thermal Resistance  
Junction - ambient2)  
R
R
th JA  
th JC  
156  
75  
K/W  
Junction - case3)  
1)  
For detailed information see chapter Package Outlines.  
2)  
If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for  
the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.  
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.  
3)  
5.91  
Semiconductor Group  
1
BC 875  
… BC 879  
Electrical Characteristics  
at T = 25 ˚C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
DC characteristics  
Collector-emitter breakdown voltage  
IC = 50 mA  
V
V
V
(BR)CE0  
(BR)CB0  
(BR)EB0  
V
BC 875  
BC 877  
BC 879  
45  
60  
80  
Collector-base breakdown voltage  
= 100 µA  
IC  
BC 875  
BC 877  
BC 879  
60  
80  
100  
Emitter-base breakdown voltage, I  
E
= 100 µA  
5
Collector cutoff current  
ICE0  
500  
nA  
VCE = 0.5 × VCEmax  
Collector cutoff current  
ICB0  
V
CB = VCBmax  
100  
20  
nA  
µA  
V
CB = VCBmax, T  
A
= 150 ˚C  
Emitter cutoff current, VEB = 4 V  
I
EB0  
100  
nA  
DC current gain  
h
FE  
= 150 mA; VCE = 10 V1)  
= 500 mA; VCE = 10 V1)  
1000  
2000  
I
C
IC  
Collector-emitter saturation voltage1)  
V
CEsat  
BEsat  
V
1.3  
1.8  
IC  
= 500 mA, I  
B
= 0.5 mA  
IC  
= 1 A, I = 1 mA  
B
Base-emitter saturation voltage1)  
= 1 A; I = 1 mA  
V
2.2  
IC  
B
AC characteristics  
Transition frequency  
fT  
150  
MHz  
IC  
= 200 mA, VCE = 5 V, f = 20 MHz  
1)  
Pulse test: t 300 µs, D 2 %.  
Semiconductor Group  
2
BC 875  
… BC 879  
Total power dissipation Ptot = f (T  
A
; TC)  
Collector cutoff current ICB0 = f (T  
CB = 100 V  
A
)
V
Permissible pulse load RthJA = f (t  
p)  
DC current gain hFE = f (T )  
A
VCE = 10 V  
Semiconductor Group  
3
BC 875  
… BC 879  
DC current gain hFE = f (I  
C
)
Transition frequency f  
VCE = 5 V, f = 20 MHz  
T
= f (I )  
C
V
CE = 10 V, T = 25 ˚C  
A
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
V
CEsat = f (I  
C
)
V
BEsat = f (I )  
C
Parameter = I  
B
, TA  
= 25 ˚C  
Parameter = I  
B
, T = 25 ˚C  
A
Semiconductor Group  
4

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