BC879 [INFINEON]
NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage; NPN硅达林顿晶体管（高电流增益低集电极 - 发射极饱和电压
| 型号： | BC879 |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage |
| 文件： | 总4页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN Silicon Darlington Transistors
BC 875
… BC 879
● High current gain
● Low collector-emitter saturation voltage
● Complementary types: BC 876, BC 878
BC 880 (PNP)
Package1)
Type
Marking
Ordering Code
Pin Configuration
1
2
3
BC 875
BC 877
BC 879
–
C62702-C853
C62702-C854
C62702-C855
E
C
B
TO-92
Maximum Ratings
Parameter
Symbol Values
Unit
BC 875
BC 877
60
BC 879
80
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
CE0
CB0
EB0
45
V
60
80
100
5
I
I
I
I
C
1
A
Peak collector current
Base current
CM
2
B
100
200
0.8 (1)
150
mA
Peak base current
BM
Total power dissipation, T
C
= 90 ˚C2)
P
tot
W
Junction temperature
Tj
˚C
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
R
th JA
th JC
≤ 156
≤ 75
K/W
Junction - case3)
1)
For detailed information see chapter Package Outlines.
2)
If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for
the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
3)
5.91
Semiconductor Group
1
BC 875
… BC 879
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
IC = 50 mA
V
V
V
(BR)CE0
(BR)CB0
(BR)EB0
V
BC 875
BC 877
BC 879
45
60
80
–
–
–
–
–
–
Collector-base breakdown voltage
= 100 µA
IC
BC 875
BC 877
BC 879
60
80
100
–
–
–
–
–
–
Emitter-base breakdown voltage, I
E
= 100 µA
5
–
–
–
–
Collector cutoff current
ICE0
500
nA
VCE = 0.5 × VCEmax
Collector cutoff current
ICB0
V
CB = VCBmax
–
–
–
–
100
20
nA
µA
V
CB = VCBmax, T
A
= 150 ˚C
Emitter cutoff current, VEB = 4 V
I
EB0
–
–
100
nA
–
DC current gain
h
FE
= 150 mA; VCE = 10 V1)
= 500 mA; VCE = 10 V1)
1000
2000
–
–
–
–
I
C
IC
Collector-emitter saturation voltage1)
V
CEsat
BEsat
V
–
–
–
–
1.3
1.8
IC
= 500 mA, I
B
= 0.5 mA
IC
= 1 A, I = 1 mA
B
Base-emitter saturation voltage1)
= 1 A; I = 1 mA
V
–
–
–
2.2
–
IC
B
AC characteristics
Transition frequency
fT
150
MHz
IC
= 200 mA, VCE = 5 V, f = 20 MHz
1)
Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
2
BC 875
… BC 879
Total power dissipation Ptot = f (T
A
; TC)
Collector cutoff current ICB0 = f (T
CB = 100 V
A
)
V
Permissible pulse load RthJA = f (t
p)
DC current gain hFE = f (T )
A
VCE = 10 V
Semiconductor Group
3
BC 875
… BC 879
DC current gain hFE = f (I
C
)
Transition frequency f
VCE = 5 V, f = 20 MHz
T
= f (I )
C
V
CE = 10 V, T = 25 ˚C
A
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CEsat = f (I
C
)
V
BEsat = f (I )
C
Parameter = I
B
, TA
= 25 ˚C
Parameter = I
B
, T = 25 ˚C
A
Semiconductor Group
4
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