BC858AW [WEITRON]

General Purpose Transistor PNP Silicon; 通用晶体管PNP硅
BC858AW
型号: BC858AW
厂家: WEITRON TECHNOLOGY    WEITRON TECHNOLOGY
描述:

General Purpose Transistor PNP Silicon
通用晶体管PNP硅

晶体 晶体管 开关 光电二极管
文件: 总6页 (文件大小:545K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BC856AW/BW  
BC857AW/BW  
BC858AW/BW/CW  
COLLECTOR  
3
General Purpose Transistor  
PNP Silicon  
3
1
1
2
P b  
Lead(Pb)-Free  
BASE  
2
EMITTER  
SOT-323(SC-70)  
MaximumRatings(T =25°Cunless otherwise noted)  
A
Rating  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
BC856  
BC857  
BC858  
-65  
-45  
-30  
V
V
V
CEO  
Collector-Base Voltage  
Emitter-Base Voltage  
BC856  
BC857  
BC858  
-80  
-50  
-30  
V
V
CBO  
BC856  
BC857  
BC858  
-5.0  
-5.0  
-5.0  
V
EBO  
I
Collector Current-Continuous  
100  
mA  
C
Total Device Dissipation FR-5 Board(1)  
T =25°C  
A
P
150  
833  
mW  
°C/W  
°C  
D
Thermal Resistance, Junctionto Ambient(1)  
Junction Temperature Range  
R
θJA  
T
J
-55 to +150  
-55 to +150  
Storage Temperature Range  
Tstg  
°C  
Device Marking  
BC856AW=3A; BC856BW=3B; BC857AW=3E;BC857BW=3F; BC858AW=3J; BC858BW;=3K; BC858CW=3L  
1. FR-5 = 1.0 x 0.75 x 0.062 in.  
WEITRON  
http://www.weitron.com.tw  
1/6  
14-Jun-06  
BC856AW/BW  
BC857AW/BW  
BC858AW/BW/CW  
WEITRON  
Electrical Characteristics(T =25ºC Unless Otherwise noted)  
A
Symbol  
Min  
Typ  
Max  
Unit  
Characteristics  
Off Characteristics  
Collector-Emitter Breakdown Voltage  
-
-
-
-
-
-
BC856 Series  
BC857 Series  
BC858 Series  
BC856 Series  
BC857 Series  
BC858 Series  
BC856 Series  
BC857 Series  
BC858 Series  
-65  
-45  
-30  
-80  
-50  
-30  
V
V
V
V
(BR)CEO  
I =-10mA  
C
-
-
-
-
-
-
Collector-Emitter Breakdown Voltage  
V
(BR)CES  
I =-10uA, V =0  
C
EB  
-
-
-
-
-
-
-80  
-50  
-30  
Collector-Base Breakdown Voltage  
I =-10µA  
C
V
(BR)CBO  
BC856 Series  
BC857 Series  
BC858 Series  
-
-
-
-
-
-
-5.0  
-5.0  
-5.0  
V
Emitter-Base Breakdown Voltage  
I =-1.0µA  
E
V
(BR)EBO  
Collector Cutoff Current  
-
-
-
-
-15  
-4.0  
nA  
µA  
I
V
V
=-30V  
=-30V, T =150°C  
CBO  
CB  
CB  
A
On Characteristics  
DC Current Gain  
-
-
-
-
-
-
90  
BC856A,BC857A,BC858A  
BC856B,BC857B,BC858B  
BC858C  
BC856A,BC857A,BC858A  
BC856B,BC857B,BC858B  
BC858C  
I =-10µA, V =-5.0V  
150  
270  
180  
290  
520  
C
CE  
h
FE  
-
250  
450  
800  
125  
220  
420  
I =-2.0mA,V =-5.0V)  
C
CE  
Collector-Emitter Saturation Voltage  
I =-10mA, I =-0.5mA  
V
V
CE(sat)  
-
-
-
-
-0.3  
-0.65  
V
C
B
I =-100mA,I =-5.0mA  
C
B
Base-Emitter Saturation Voltage  
I =-10mA, I =-0.5mA  
-
-
-
-
-0.7  
-0.9  
C
B
V
V
BE(sat)  
I =-100mA I =-5.0mA  
C
B
Base-Emitter On Voltage  
I =-2.0mA, V =-5.0V  
-
-
V
-0.6  
-
-0.75  
-0.82  
C
CE  
BE(on)  
I =-10mA, V =-5.0V  
C
CE  
Small-signal Characteristics  
Current-Gain-Band width Product  
f
100  
-
-
MHz  
pF  
T
I =-10mA, V =-5.0V, f=100MHz  
C
CE  
Output Capacitance  
=-10V,f=1.0MHz  
C
ob  
-
-
-
-
4.5  
10  
V
CB  
Noise Figure  
dB  
NF  
IC=-0.2mA, VCE=-5.0V, Rs=2.0kΩ, f=1.0kHz, BW=200Hz  
WEITRON  
http://www.weitron.com.tw  
2/6  
14-Jun-06  
BC856AW/BW  
BC857AW/BW  
BC858AW/BW/CW  
WEITRON  
BC857 / BC858  
–1.0  
–0.9  
–0.8  
–0.7  
–0.6  
–0.5  
–0.4  
–0.3  
–0.2  
–0.1  
0
2.0  
TA = 25°C  
VCE= –10 V  
1.5  
V BE(sat) @ IC /I B=10  
TA = 25°C  
1.0  
VBE(on) @ VCE = –10 V  
0.7  
0.5  
0.3  
0.2  
VCE(sat) @ IC /I B = 10  
–0.2  
–0.5  
–1.0  
–2.0  
–5.0  
–10  
–20  
–50  
–100  
–200  
–0.1  
–0.2  
–0.5  
–1.0  
–2.0  
–5.0  
–10  
–20  
–50 –100  
I C , COLLECTOR CURRENT (mAdc)  
Figure 1. Normalized DC Current Gain  
I C , COLLECTOR CURRENT (mAdc)  
Figure 2. “Saturation” and “On” Voltages  
–2.0  
1.0  
–55°C to +125°C  
TA = 25°C  
1.2  
1.6  
2.0  
2.4  
2.8  
–1.6  
–1.2  
–0.8  
–0.4  
0
I C= –50 mA  
I C  
=
IC= –200 mA  
–10 mA  
IC= –100 mA  
IC= –20 mA  
–0.02  
–0.1  
–1.0  
–10 –20  
–0.2  
–1.0  
–10  
–100  
I B , BASE CURRENT (mA)  
I C , COLLECTOR CURRENT (mA)  
Figure 4. Base–Emitter Temperature Coefficient  
Figure 3. Collector Saturation Region  
400  
300  
10.0  
C ib  
7.0  
5.0  
TA=25°C  
200  
150  
V CE = –10V  
T A = 25°C  
100  
80  
C ob  
3.0  
2.0  
60  
40  
30  
20  
1.0  
–0.4  
–0.6  
–1.0  
–2.0  
–4.0 –6.0  
–10  
–20 –30 –40  
–0.5  
–1.0  
–2.0 –3.0  
–5.0  
–10  
–20 –30  
–50  
IC , COLLECTOR CURRENT (mAdc)  
V R , REVERSE VOLTAGE (VOLTS)  
Figure 6. Current–Gain – Bandwidth Product  
Figure 5. Capacitances  
WEITRON  
http://www.weitron.com.tw  
3/6  
14-Jun-06  
BC856AW/BW  
BC857AW/BW  
BC858AW/BW/CW  
WEITRON  
BC856  
–1.0  
–0.8  
–0.6  
–0.4  
–0.2  
0
TJ= 25°C  
VBE(sat) @ IC/IB=10  
V CE = –5.0V  
T A = 25°C  
2.0  
1.0  
VBE @VCE= –5.0 V  
0.5  
0.2  
VCE(sat) @ I C /IB= 10  
–0.1–0.2  
–1.0 –2.0 –5.010 –20 –50 –100–200  
–0.2  
–0.5 –1.0 –2.0 –5.0 –10 –20  
–50 –100 –200  
IC , COLLECTOR CURRENT (mA)  
IC , COLLECTOR CURRENT (mA)  
Figure 8. “On” Voltage  
Figure 7. DC Current Gain  
–2.0  
–1.6  
–1.2  
–0.8  
–0.4  
0
–1.0  
–1.4  
–1.8  
–2.2  
–2.6  
–3.0  
–100mA –200mA  
IC  
=
–20mA  
–50mA  
–10mA  
θ
VB for V BE  
–55°C to 125°C  
TJ= 25°C  
–0.02  
–0.05 –0.1 –0.2  
–0.5 –1.0 –2.0  
–5.0 –10 –20  
–0.2  
–0.5 –1.0 –2.0  
–5.0 –10 –20  
–50 –100 –200  
IB , BASE CURRENT (mA)  
I C , COLLECTOR CURRENT (mA)  
Figure 9. Collector Saturation Region  
Figure 10. Base–Emitter Temperature Coefficient  
40  
20  
10  
VCE= –5.0V  
500  
200  
TJ= 25°C  
C ib  
100  
50  
6.0  
4.0  
C ob  
20  
2.0  
–0.1 –0.2 –0.5  
–1.0 –2.0  
–5.0 –10 –20  
–50 –100  
–1.0  
–10  
–100  
V R , REVERSE VOLTAGE (VOLTS)  
I C , COLLECTOR CURRENT (mA)  
Figure 11. Capacitance  
Figure 12. Current–Gain – Bandwidth Product  
WEITRON  
http://www.weitron.com.tw  
4/6  
14-Jun-06  
BC856AW/BW  
BC857AW/BW  
BC858AW/BW/CW  
WEITRON  
1.0  
0.7  
D=0.5  
0.5  
0.2  
0.3  
0.2  
SINGLE PULSE  
0.05  
0.1  
Z θJC (t) = r(t) R θJC  
R θJC = 83.3°C/W MAX  
θJA (t) = r(t) R θJA  
0.1  
P(pk)  
Z
SINGLE PULSE  
0.07  
0.05  
R θJA = 200°C/W MAX  
t1  
D CURVES APPLY FOR POWER  
PULSE TRAIN SHOWN  
READ TIME AT t 1  
t 2  
DUTY CYCLE, D = t1 /t 2  
0.03  
0.02  
T J(pk) – T C = P (pk) R θJC (t)  
0.01  
0.1  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
20  
50  
100  
200  
500  
1.0k 2.0k  
5.0k  
10k  
t, TIME (ms)  
Figure 13. Thermal Response  
–200  
–100  
–50  
The safe operating area curves indicate I C –V CE limits of the  
transistor that must be observed for reliable operation. Collector  
load lines for specific circuits must fall below the limits indicated by  
the applicable curve.  
1s  
3 ms  
TJ= 25°C  
TA= 25°C  
The data of Figure 14 is based upon TJ(pk) = 150°C; T C or TA  
is variable depending upon conditions. Pulse curves are valid for  
BC558  
BC557  
BC556  
duty cycles to 10% provided TJ(pk) < 150°C. TJ(pk) may be calcu-  
lated from the data in Figure 13. At high case or ambient  
temperatures, thermal limitations will reduce the power that can  
be handled to values less than the limitations imposed by the sec-  
ondary breakdown.  
–10  
–5.0  
BONDING WIRE LIMIT  
THERMAL LIMIT  
SECOND BREAKDOWN LIMIT  
–2.0  
–1.0  
–0.5  
–10  
–30 –45 –65 –100  
V CE , COLLECTOR–EMITTER VOLTAGE (V)  
Figure 14. Active Region Safe Operating Area  
WEITRON  
http://www.weitron.com.tw  
5/6  
14-Jun-06  
BC856AW/BW  
BC857AW/BW  
BC858AW/BW/CW  
WEITRON  
SOT-323 Outline Demensions  
Unit:mm  
A
SOT-323  
Dim  
A
B
C
D
Min  
0.30  
1.15  
2.00  
-
0.30  
1.20  
1.80  
0.00  
0.80  
0.42  
0.10  
Max  
0.40  
1.35  
2.40  
0.65  
0.40  
1.40  
2.20  
0.10  
1.00  
0.53  
0.25  
B
C
TOP VIEW  
D
G
E
E
G
H
J
K
L
H
K
L
M
J
M
WEITRON  
http://www.weitron.com.tw  
6/6  
14-Jun-06  

相关型号:

BC858AW-13

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
DIODES

BC858AW-7

PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
DIODES

BC858AW-G

Small Signal Transistor
COMCHIP

BC858AW-HF

Small Signal Bipolar Transistor,
COMCHIP

BC858AW-TAPE-13

TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP

BC858AW-TAPE-7

TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP

BC858AWE6327

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
INFINEON

BC858AWE6433

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
INFINEON

BC858AWG

PNP Silicon Epitaxial Planar Transistor
LGE

BC858AWT1

CASE 419-02, STYLE 3 SOT-323/SC-70
MOTOROLA

BC858AWT1

General Purpose Transistors(PNP Silicon)
ONSEMI

BC858AWT1

General Purpose Transistors(PNP Silicon)
LRC