BC858AW-13 [DIODES]
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3;
| 型号： | BC858AW-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 开关 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPICE MODELS: BC856AW BC856BW BC857AW BC857BW BC857CW BC858AW BC858BW BC858CW
BC856AW - BC858CW
PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
·
·
·
·
Ideally Suited for Automatic Insertion
SOT-323
Min
Complementary NPN Types Available (BC846W-BC848W)
For Switching and AF Amplifier Applications
A
Dim
A
Max
0.40
1.35
2.20
C
0.25
Available in Lead Free/RoHS Compliant Version (Note 3)
B
1.15
C
B
C
2.00
Mechanical Data
B
E
D
0.65 Nominal
G
H
E
0.30
1.20
1.80
0.0
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8°
·
·
Case: SOT-323
G
H
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
K
J
M
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
J
Terminals: Solderable per MIL-STD-202, Method 208
K
L
0.90
0.25
0.10
0°
D
F
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 6, on Page 2
L
M
·
·
Pin Connections: See Diagram
a
Marking Code: See Table Below & Diagram
on Page 2
All Dimensions in mm
·
·
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
Marking Code (Note 2)
Type
Marking
K3A
Type
Marking
K3G
BC856AW
BC856BW
BC857AW
BC857BW
BC857CW
BC858AW
BC858BW
BC858CW
K3B
K3J, K3A, K3V
K3K, K3B, K3W
K3L, K3G
K3V, K3A
K3W, K3B
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
Value
Unit
-80
-50
-30
Collector-Base Voltage
BC856
BC857
BC858
VCBO
V
-65
-45
-30
Collector-Emitter Voltage
BC856
BC857
BC858
VCEO
V
VEBO
IC
-5.0
-100
V
mA
mA
mA
mW
°C/W
°C
Emitter-Base Voltage
Collector Current
ICM
Peak Collector Current
-200
IEM
Peak Emitter Current
-200
Pd
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
200
RqJA
Tj, TSTG
625
-65 to +150
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Current gain subgroup “C” is not available for BC856W.
3. No purposefully added lead.
DS30251 Rev. 5 - 2
1 of 3
BC856AW - BC858CW
www.diodes.com
ã Diodes Incorporated
@ TA =25°C unless otherwise specified
Electrical Characteristics
Characteristic
Symbol Min
Typ
Max
Unit
Test Condition
IC = 10mA, IB = 0
Collector-Base Breakdown Voltage (Note 4)
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage (Note 4)
BC856
BC857
BC858
-80
-50
-30
—
—
—
—
—
—
V(BR)CBO
V
BC856
BC857
BC858
-65
-45
-30
—
—
—
—
—
—
I
I
C = 10mA, IB = 0
V(BR)CEO
V(BR)EBO
hFE
V
V
E = 1mA, IC = 0
-5
—
—
DC Current Gain (Note 4)
Current Gain Group A
125
220
420
180
290
520
250
475
800
B
C
VCE = -5.0V, IC = -2.0mA
—
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
-75
-300
-650
VCE(SAT)
VBE(SAT)
VBE(ON)
Collector-Emitter Saturation Voltage (Note 4)
Base-Emitter Saturation Voltage (Note 4)
Base-Emitter Voltage (Note 4)
—
mV
mV
mV
-250
I
C = -10mA, IB = -0.5mA
—
—
-700
-850
—
-950
IC = -100mA, IB = -5.0mA
VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -10mA
-600
—
-650
—
-750
-820
VCB = -30V
VCB = -30V, TA = 150°C
ICBO
ICBO
—
—
—
—
-15
-4.0
nA
µA
Collector-Cutoff Current (Note 4)
VCE = -5.0V, IC = -10mA,
f = 100MHz
fT
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
100
—
200
3
—
4.5
10
MHz
pF
VCB = -10V, f = 1.0MHz
CCBO
NF
V
CE = -5.0V, IC = 200µA,
RS = 2kW, f = 1kHz,
Df = 200Hz
—
—
dB
Notes: 4. Short duration pulse test to minimize self-heating effect.
(Note 5)
Ordering Information
Device
Packaging
Shipping
BC85xxW-7*
SOT-323
3000/Tape & Reel
Notes: 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
*xx = device type, e.g. BC856AW-7.
6. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: BC856AW-7-F.
Marking Information
XXX = Product Type Marking Code (See Page 1), e.g. K3A = BC856AW
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
XXX
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30251 Rev. 5 - 2
2 of 3
www.diodes.com
BC856AW - BC858CW
250
200
150
100
50
0.5
0.4
IC
IB
= 10
0.3
0.2
TA = 25°C
TA = 150°C
0.1
0
TA = -50°C
1000
100
0
200
0
175
25
50
150
100 125
75
0.1
1
10
TA, AMBIENT TEMPERATURE (°C)
IC, COLLECTOR CURRENT (mA)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
Fig. 2 Collector Emitter Saturation Voltage
vs. Collector Current
1000
1000
100
10
TA = 150°C
VCE = 5V
VCE = 5V
100
10
1
TA = 25°C
TA = -50°C
10
1
100
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain (Group B) vs. Collector Current
Fig. 4, Gain Bandwidth Product vs Collector Current
DS30251 Rev. 5 - 2
3 of 3
BC856AW - BC858CW
www.diodes.com
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