BAV756DW [WEITRON]
Surface Mount Switching Multi-Chip; 表面贴装开关多芯片
| 型号： | BAV756DW |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Surface Mount Switching Multi-Chip |
| 文件： | 总3页 (文件大小：1542K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV70DW
BAV99DW
BAV756DW BAW567DW
BAV99BRW BAW56DW
Surface Mount Switching Multi-Chip
Diode Array
MULTI-CHIP DIODES
150m AMPERES
75 VOLTS
P b
Lead(Pb)-Free
Features:
* For General Purpose Switching Applications
* Fast Switching Speed
6
5
4
* High Conductance
* Easily Connected As Full Wave Bridge
1
2
3
SOT-363
Mechanical Data:
* Case : SOT-363
* Case Material : Molded Plastic. UL Flammability
Classification Ration 94V-0
* Moisture Sensitivity : Level 1 per J-STD-020C
* Terminals : Solderable per MIL-STD-202, Method 208
* Polarity : See Diagram
* Weight : 0.006 grams(appro)
SOT-363 Outline Dimensions
Unit:mm
A
SOT-363
Dim
A
Min
0.10
Max
0.30
6
5
4
B
C
B
C
D
E
H
J
K
L
M
1.15
2.00
1.35
2.20
1
2
3
0.65 REF
E
D
0.30
1.80
-
0.80
0.25
0.10
0.40
2.20
0.10
1.10
0.40
0.25
H
K
M
L
J
WEITRON
hpp://www.weitron.com.tw
Rev.A 11-Aug-09
1/3
BAV70DW
BAV99DW
BAV756DW BAW567DW
BAV99BRW BAW56DW
Maximum Ratings (TA=25°C Unless otherwise noted)
Characteristic
Symbol
Value
Unit
V
100
Non-Repetitive Peak Reverse Voltage
V
RM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
V
RM
75
V
R
RMS Reverse Voltage
53
V
V
R(RSM)
Average Rectiꢀed Output Current(1,3)
I
150
mA
O
Non-Repetitive Forward Current
@t=1.0µs
@t=1.0s
2.0
1.0
I
A
FSM
Power Dissipation(1,3)
P
200
625
mW
°C/W
°C
D
Thermal Resistance, Junction to Ambient Air(1,3)
Junction & Storage Temperature Range
R
θJA
Tj,Tstg
-65 to +150
(T =25°C Unless otherwise noted)
A
Electrical Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage(2)
I =2.5μA
R
V
75
-
-
A
(BR)R
Reverse Current(2)
μA
nA
2.5
25
V =75V
R
I
-
-
-
R
V =20V
R
Forward Voltage(2)
I =1mA
F
715
855
1000
1250
I =10mA
V
-
mA
F
F
I =50mA
F
I =150mA
F
Total Capacitance
(VR=0V, f=1.0MHz)
C
T
-
-
-
-
2.0
4.0
pF
nS
D
rr
Reverse Recover Time
I = I = 10mA, I = 0.1 x I , R = 100Ω
F
R
rr
R
L
Notes:
1. Device mounted on FR-4 PC board with recommended pad layout,.
2. Short duration test pulse used to minimize self-heating effect.
3. One or more diodes loaded.
WEITRON
http://www.weitron.com.tw
2/3
Rev.A 11-Aug-09
BAV70DW
BAV99DW
BAV756DW BAW567DW
BAV99BRW BAW56DW
Device Marking
Item
Marking
Eqivalent Circuit diagram
1
2
3
6
BAV70DW
KJA
5
4
1
6
5
BAV756DW
BAV99BRW
BAV99DW
KCA
KGJ
KJG
2
3
4
1
6
5
2
3
4
1
2
3
6
5
4
1
2
3
6
BAW567DW
BAW56DW
KAC
KJC
5
4
1
2
3
6
5
4
Typical Characteristics
10000
1000
100
1
T
A
= 150°C
TA = 125°C
T
= 75°C
= 25°C
TA = 150°C
A
0.1
TA = 75°C
T
A
10
1
TA = 25°C
T
= 0°C
A
0.01
TA = 0°C
T
A
= -40°C
TA = -40°C
0.1
20
40
60
80
100
0
0.001
0.5
0
1.0
1.5
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS FORWARD VOLTAGE(V)
Fig.2 Typical Reverse Characteristics
Fig.1 Forward Characteristics
250
2.0
f = 1.0MHz
1.8
200
150
1.6
1.4
1.2
1.0
0.8
100
50
0
0.6
0
10
20
30
40
0
25
50
75
100
125 150
VR, REVERSE VOLTAGE(V)
TA, AMBIENT TEMPERATURE (˚C)
Fig.3 Typical Capacitance vs. Reverse Voltage
Fig.4 Power Derating Curve
WEITRON
http://www.weitron.com.tw
3/3
Rev.A 11-Aug-09
相关型号：
BAV756DW-T1-LF
Rectifier Diode, 4 Element, 0.15A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-6
WTE
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