BAV756DW_08 [DIODES]
QUAD SURFACE MOUNT SWITCHING DIODE ARRAY; 四表面贴装开关二极管阵列
| 型号： | BAV756DW_08 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | QUAD SURFACE MOUNT SWITCHING DIODE ARRAY |
| 文件： | 总3页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV756DW
QUAD SURFACE MOUNT SWITCHING DIODE ARRAY
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Features
Mechanical Data
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•
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•
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•
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Fast Switching Speed
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Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Polarity: See Diagram
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.006 grams (approximate)
Ultra-Small Surface Mount Package
For General Purpose Switching Applications
High Conductance
One BAV70 Circuit and One BAW56 Circuit In One Package
Easily Connected As Full Wave Bridge
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Notes 4 and 5)
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•
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SOT-363
C2
C1
A1
A2
A1
C2
TOP VIEW
TOP VIEW
Internal Schematic
Maximum Ratings @T = 25°C unless otherwise specified
A
Characteristic
Non-Repetitive Peak Reverse Voltage
Symbol
VRM
Value
100
Unit
V
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
75
V
RMS Reverse Voltage
53
V
VR(RMS)
IFM
Forward Continuous Current (Notes 1 and 2)
Average Rectified Output Current (Notes 1 and 2)
300
150
mA
mA
IO
2.0
1.0
Non-Repetitive Peak Forward Surge Current
@ t = 1.0μs
@ t = 1.0s
A
IFSM
Thermal Characteristics
Characteristic
Power Dissipation (Notes 1 and 2)
Symbol
PD
Value
200
Unit
mW
mW
300
Power Dissipation TS = 60°C (Note 2)
PD
Thermal Resistance Junction to Ambient Air (Notes 1 and 2)
Thermal Resistance Junction to Soldering Point (Note 2)
Operating and Storage Temperature Range
625
°C/W
°C/W
°C
Rθ
Rθ
TJ, TSTG
JA
275
JS
-65 to +150
Electrical Characteristics @T = 25°C unless otherwise specified
A
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 6)
75
V
V(BR)R
⎯
IR = 2.5μA
IF = 1.0mA
IF = 10mA
IF = 50mA
IF = 150mA
0.715
0.855
1.0
Forward Voltage
V
VF
⎯
⎯
1.25
VR = 75V
μA
μA
μA
nA
2.5
50
30
25
VR = 75V, TJ = 150°C
VR = 25V, TJ = 150°C
VR = 20V
Reverse Current (Note 6)
IR
Total Capacitance
2.0
4.0
pF
CT
trr
⎯
⎯
VR = 0, f = 1.0MHz
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100Ω
Reverse Recovery Time
ns
Notes:
1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
2. One or more diodes loaded.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
6. Short duration pulse test used to minimize self-heating effect.
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April 2008
© Diodes Incorporated
BAV756DW
Document number: DS30148 Rev. 9 - 2
BAV756DW
300
250
200
150
1
Note 1
0.1
100
0.01
50
0
0.001
0
25
TA, AMBIENT TEMPERATURE (
Fig. 1 Power Derating Curve, Total Package
50
75
100
125
150
0.5
1.0
1.5
0
°
C)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics, Per Element
10,000
1,000
100
2.0
1.8
f = 1.0MHz
1.6
1.4
1.2
1.0
0.8
10
1
0.6
0.4
0.2
0.1
0.0
0
20
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics, Per Element
40
60
80
100
0
10
VR, DC REVERSE VOLTAGE (V)
30
40
20
Fig. 4 Total Capacitance vs. Reverse Voltage, Per Element
Ordering Information (Notes 5 & 7)
Part Number
Case
Packaging
BAV756DW-7-F
SOT-363
3000/Tape & Reel
Notes:
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
KCA = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
KCA
M = Month ex: 9 = September
Date Code Key
Year
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
2111
2012
Code
M
N
P
R
S
T
U
V
W
X
Y
Z
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
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April 2008
© Diodes Incorporated
BAV756DW
Document number: DS30148 Rev. 9 - 2
BAV756DW
Package Outline Dimensions
A
SOT-363
Min
Dim
A
B
C
D
F
Max
0.30
1.35
2.20
0.10
B
C
1.15
2.00
0.65 Nominal
0.30
1.80
⎯
0.90
0.25
0.10
0°
0.40
2.20
0.10
1.00
0.40
0.25
8°
H
H
J
K
J
M
K
L
M
L
D
F
α
All Dimensions in mm
Suggested Pad Layout
E
E
Dimensions Value (in mm)
Z
G
X
Y
C
E
2.5
1.3
0.42
0.6
C
G
Z
1.9
0.65
Y
X
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
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April 2008
© Diodes Incorporated
BAV756DW
Document number: DS30148 Rev. 9 - 2
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