B140N-G [WEITRON]
Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM),;
| 型号： | B140N-G |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), 二极管 |
| 文件： | 总3页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B120N/B140N
B160N
Surface Mount Schottky Barrier Diodes
* “G” Lead(Pb)-Free
REVERSE VOLTAGE
20-60Volts
FORWARD CURRENT
1.0 Ampere
Features:
* Surface Mounted Applications
* Metal-Semiconductor Junction with Guardring
* Epitaxial Construction
* Low Leakage Current
* High Current Capability
* Plastic Material Has UL Flammability Classification 94V-0
* For Use in, High Frequency Inverters,
Free Wheeling, and Polarity Protection Applications
SOD-323F
(0805)
Mechanical Data
* Case : Molded Plastic, SOD-323F(0805)
* Terminals : Solder Plated, Solderable per ML-STD-750 Medthod 2026
* Polarity :Indicated By Cathode Band
* Shipped in 8mm Tape, 3000 Pcs per 7 Inch Reel
* Weight: 0.0085 grams
SOD-323F Outline Dimension
unit:mm
B
C
SOD-323F
Dim
Max
1.35
Min
1.15
A
A
B
C
E
H
J
2.30
2.70
E
0.30(TYP)
-
1.80
2.20
J
0.90(TYP)
1.10
-
H
0.90
H
WEITRON
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B120N/B140N
B160N
Maximum Ratings and Electrical Characteristics
Rating 25 C Ambient Temperature Unless Otherwise Specified.
Single Phase Half Wave, 60Hz , Resistive or Inductive Load.
For Capacitive Load, Derate Current by 20%.
Symbol
B120N B140N
B160N
60
Characteristics
Unit
V
Maximum Recurrent Peak Reverse Voltage
40
20
V
V
V
RRM
RMS
DC
Maximum RMS Voltage
28
14
42
V
Maximum DC Blocking Voltage
Maximum Average Forward (FIG1)
Peak Forward Surge Current,
8.3 ms Single Half Sine-Wave
Superimposed on Rated Load (JEDEC Method)
Maximum Instantaneous
40
20
60
V
I
(AV)
1.0
A
F
30
A
I
FSM
V
F
0.55
@ T
A
=25 C
=25 C
=125 C
0.70
V
Maximum DC Reverse Current @T
A
0.5
I
R
mA
At Rated DC Blocking Voltage @T
Typical Junction Capacitance (1)
Typical Thermal Resistance (2)
Operating Temperature Range
Storage Temperature Range
A
10
C
J
120(TYP)
90(TYP)
PF
R
θ
JC
C/W
C
TJ
-55 to+125
-55 to+150
TSTG
C
NOTES:
1. Measured at 1.0MHz applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to case.
Device Marking
B120N=12 B140N=14 B160N=16
WEITRON
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B120N/B140N
B160N
1.2
1.0
0.8
0.6
50
10
3.0
1.0
0.4
0.2
0
0
20
40
60
80
100
120
140
160
180
200
Tj=25 C
AMBIENT TEMPERATURE,( C)
Pulse Width 300us
1% Duty Cycle
FIG.1 Typical Forward Current Derating Curve
0.1
.01
30
.1 .3
.5
.7
.9
1.1 1.3 1.5
24
18
FORWARD VOLTAGE,(V)
FIG.2 Typical Forward Characteristics
8.3ms Single Half
Sine Wave
Tj=25 C
12
6
JEDEC method
0
50
1
5
10
100
NUMBER OF CYCLES AT 60Hz
100
10
FIG.3 Maximum Non-Repetitive Forward
Surge Current
350
300
250
200
1.0
Tj=75 C
150
100
50
.1
Tj=25 C
.01
0
0
20 40 60 80 100 120 140
.01
.05
.1
.5
1
5
10
50 100
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
REVERSE VOLTAGE,(V)
FIG.5 Typcial Reverse Characteristics
FIG.4 Typical Junction Capacitance
WEITRON
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相关型号：
B140Q-13-F
Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, GREEN, PLASTIC, SMA, 2 PIN
DIODES
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