669A [WEITRON]
NPN Epitaxial P lanar Transistors; NPN外延P lanar晶体管
| 型号： | 669A |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | NPN Epitaxial P lanar Transistors |
| 文件： | 总4页 (文件大小：401K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WTM669A
NPN Epitaxial Planar Transistors
SOT-89
P b
Lead(Pb)-Free
1
2
1. BASE
3
2. COLLECTOR
3. EMITTER
ABSOLUTE MAXIMUM RATINGS (T =25˚C)
A
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
Limits
Unit
V
V
CBO
180
160
5
V
V
CEO
V
V
EBO
I
1.5
3
C(DC)
Collector Current
A
I
C(Pulse)
Collector Power Dissipation
Junction Temperature
W
˚C
˚C
P
1
D
T
150
j
T
-55 to +150
Storage Temperature Range
stg
Device Marking
WTM669A=669A
ELECTRICAL CHARACTERISTICS(T =25˚Cunless otherwise noted)
A
Min
Typ
Parameter
Symbol
Max
Unit
Collector-Base Breakdown Voltage
BV
BV
BV
180
-
-
V
V
CBO
CEO
EBO
I =1mA, I =0
C
E
Collector-Emitter Breakdown Voltage
I =10mA, I =0
160
-
-
-
-
-
C
B
Emitter-Base Breakdown Voltage
I =1mA, I =0
5
-
V
E
C
Collector Cutoff Current
I
10
µA
CBO
V
CB
=160V, I =0
E
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WTM669A
ELECTRICAL CHARACTERISTICS (T =25˚C Unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
h
V =5V, I =150mA
60
30
-
-
200
-
FE1
CE
C
-
h
FE2
V =5V, I =500mA
CE
C
Collector-Emitter Saturation Voltage
I =600mA, I =50mA
V
-
-
-
-
1
V
V
CE(sat)
C
B
Base-Emitter Saturation Voltage
V =5V, I =150mA
V
1.5
BE(on)
CE
C
1. Pulse Test: Pulse Width ≤ 380µs, Duty Cycle ≤ 2%
DYNAMIC CHARACTERISTICS
Transition Frequency
f
MHz
pF
-
-
140
14
-
-
T
V =5V, I =10mA, f=100MHz
CE
C
Output Capacitance
V =10V, f=1MHz
CB
C
ob
CLASSIFICATION OF h
FE1
Rank
B
C
h
60-120
100-200
FE1
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WTM669A
ELECTRICAL CHARACTERISTIC CURVES
-1.2
-1.0
-0.8
350
VCE = -5V
lC=101B
T =75˚C
a
300
250
200
150
100
50
25˚C
-0.6
-0.4
-0.2
0
-25˚C
T =-75˚C
a
-25˚C
25˚C
0
-1
-10
-100
-1000
-1
-10
-100
-1000
Collector current IC (mA)
Collector current IC (mA)
Fig.2 Satueation Voltage & Collector Current
Fig.1 Current Gain & Collector Current
240
1.2
VCE=5V
lC=101B
T =-25˚C
a
200
160
120
80
1.0
TC=-25˚C
0.8
0.6
25˚C
75˚C
0.4
0.2
0
40
0
10
30
100
300
1000
1
3
10
30
100 300 1000
Collector current IC (mA)
Collector current IC (mA)
Fig.4 Gain Bandwidth Product
& Collector Current
Fig.3 Satueation Voltage & Collector Current
200
-3
f = 1 MHz
ICmax
IE = 0
(-13.3V, -1.5A)
100
-1.0
50
(-40V, -0.5A)
-0.3
20
10
5
DC Operation (TC=25˚C)
-0.1
-0.03
(-160V, -0.02A)
-0.01
2
-1
-3
-10
-30
-100
-300
-1
-3
-10
-30
-100
Collector to emitter voltage VCE (V)
Collector to base voltage VCB (V)
Fig.5 Capacitance & Collector to Base Voltage
Fig.6 Safe Operating Area
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WTM649A
SOT-89 Outline Dimensions
unit:mm
SOT-89
Dim
A
B
C
D
Min
Max
E
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
A
G
H
J
C
E
G
H
J
D
B
K
K
L
1.500TYP
L
2.900
3.100
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01-Aug-05
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