BTA316-800CT [WEEN]

3Q Triac;


型号：	BTA316-800CT
厂家：	WeEn Semiconductors
描述：	3Q Triac 三端双向交流开关
文件：	总12页 (文件大小：370K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BTA316-800CT

3Q Triac

Rev.01 - 26 September 2017

Product data sheet

1. General description

Planar passivated high commutation three quadrant triac in a SOT78 plastic package intended for

use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series CT" triac

will commutate the full RMS current at the maximum rated junction temperature (T_j(max)= 150 °C)

without the aid of a snubber. It is used in applications where "high junction operating temperature

capability" is required.

2. Features and beneﬁts

•

3Q technology for improved noise immunity

•

High commutation capability with maximum false trigger immunity

High junction operating temperature capability (T_j(max)= 150 °C)

High immunity to false turn-on by dV/dt

High voltage capability

Less sensitive gate for very high noise immunity

Planar passivated for voltage ruggedness and reliability

Triggering in three quadrants only

3. Applications

•

Applications subject to high temperature (T_j(max)= 150 °C)

Electronic thermostats (heating and cooling)

High power motor controls e.g. washing machines and vacuum cleaners

Rectiﬁer-fed DC inductive loads e.g. DC motors and solenoids

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Values

Unit

Absolute maximum rating

V_DRM

I_T(RMS)

I_TSM

repetitive peak off-state

voltage

800

RMS on-state current

full sine wave; T_mb≤ 131 °C;

Fig. 1; Fig. 2; Fig. 3

non-repetitive peak on- full sine wave; t_p= 20 ms; T_j(init)= 25 °C;

140

state current

Fig. 4; Fig. 5

full sine wave; t_p= 16.7 ms; T_j(init)= 25 °C

150

T_j

junction temperature

°C

WeEn Semiconductors

BTA316-800CT

3Q Triac

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

I_GT

gate trigger current

V_D= 12 V; I_T= 0.1 A; T2+ G+

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2+ G-

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G-

T_j= 25 °C; Fig. 7

I_H

holding current

on-state voltage

V_D= 12 V; T_j= 25 °C; Fig. 9

I_T= 18 A; T_j= 25 °C; Fig. 10

V_T

1.3

1.5

Dynamic characteristics

dV_D/dt

rate of rise of off-state V_DM= 536 V; T_j= 125 °C; (V_DM= 67%

500

200

V/μs

A/ms

voltage

of V_DRM); exponential waveform;

gate open circuit

V_DM= 536 V; T_j= 150 °C; (V_DM= 67%

of V_DRM); exponential waveform;

gate open circuit

dI_com/dt

rate of change of

commutating current

V_D= 400 V; T_j= 150 °C; I_T(RMS)= 16 A;

dV_com/dt = 20 V/μs; gate open circuit;

snubberless condition

5. Pinning information

Table 2. Pinning information

Symbol

Description

Simpliﬁed outline

Graphic symbol

main terminal 1

main terminal 2

sym051

gate

mounting base; main terminal 2

2 3

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

BTA316-800CT

TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting

hole; 3-lead TO-220AB

SOT78

7. Marking

Table 4. Marking codes

Type number

Marking codes

BTA316-800CT

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BTA316-800CT

3Q Triac

8. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Values

Unit

V_DRM

repetitive peak off-state

voltage

800

I_T(RMS)

I_TSM

RMS on-state current

full sine wave; T_mb≤ 131°C;

Fig. 1; Fig. 2; Fig. 3

non-repetitive peak on-

state current

full sine wave; t_p= 20 ms; T_j(init)= 25 °C;

Fig. 4; Fig. 5

140

full sine wave; t_p= 16.7 ms; T_j(init)= 25 °C

t_p= 10ms; sine wave

150

I²t

I²t for fusing

A²s

A/μs

dI_T/dt

rate of rise of on-state

current

I_G= 70mA

100

I_GM

peak gate current

peak gate power

P_GM

P_G(AV)

°C

average gate power

storage temperature

junction temperature

over any 20 ms period

0.5

stg

-40 to 150

150

T_j

bidc2-002

bidc2-001

T(RMS)

(A)

131 °C

-2

-1

-50

-10

110

150

(°C)

surge duration (s)

f = 50Hz; T_mb= 131 °C

Fig. 2. RMS on-state current as a function of surge

duration; maximum values

Fig. 1. RMS on-state current as a function of mounting

base temperature; maximum values

BTA316-800CT

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BTA316-800CT

3Q Triac

bidc2-003

128.4

conduction form

mb(max)

tot

angle

factor

(W)

(°C)

132

α = 180

(degrees)

120

180

2.816

1.976

1.570

1.329

1.110

135.6

139.2

142.8

146.4

150

(A)

T(RMS)

α = conduction angle

a = form factor = I_T(RMS)/ I_T(AV)

Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values

bidc2-004

160

TSM

(A)

TSM

120

j(init)

= 25 °C max

number of cycles (n)

f = 50 Hz

Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum

values

bidc2-005

TSM

(A)

= 25 °C max

j(init)

(1)

-5

-4

-3

-2

-1

(s)

t_p≤ 20 ms ;

(1) dI_T/dt limit

Fig. 5. Total power dissipation as a function of RMS on-state current; maximum values

BTA316-800CT

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9. Thermal characteristics

Table 5. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

R_th(j-mb)

thermal resistance

from junction to

mounting base

full cycle; Fig. 6

0.9

K/W

half cycle; Fig. 6

in free air

1.3

K/W

R_th(j-a)

thermal resistance

from junction to

ambient free air

bidc2-006

th(j-mb)

(K/W)

Unidirectiona (half cycle)

Bidirectional (full cycle)

-1

δ =

-2

-3

-6

-5

-4

-3

-2

-1

(s)

Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration

BTA316-800CT

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10. Characteristics

Table 7. Characteristics

Symbol

Static characteristics

I_GTgate trigger current

Parameter

Conditions

Min

Typ

Max

Unit

V_D= 12 V; I_T= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 7

I_L

latching current

V_D= 12 V; I_T= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 8

V_D= 12 V; I_T= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 8

V_D= 12 V; I_T= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 8

I_H

holding current

V_D= 12 V; T_j= 25 °C; Fig. 9

I_T= 18 A; T_j= 25 °C; Fig. 10

1.5

V_T

V_GT

on-state voltage

gate trigger voltage

1.3

0.8

V_D= 12 V; I_T= 0.1 A; T_j= 25 °C;

Fig. 11

V_D= 400 V; I_T= 0.1 A; T_j= 150 °C;

Fig. 11

0.25

0.4

I_D

off-state current

V_D= 800 V; T_j= 25 °C

V_D= 800 V; T_j= 150 °C

μA

Dynamic characteristics

dV_D/dt

rate of rise of off-state V_DM= 536 V; T_j= 125 °C; (V_DM= 67%

500

200

V/μs

A/ms

voltage

of V_DRM); exponential waveform;

gate open circuit

V_DM= 536 V; T_j= 150 °C; (V_DM= 67%

of V_DRM); exponential waveform;

gate open circuit

dI_com/dt

rate of change of

commutating current

V_D= 400 V; T_j= 150 °C; I_T(RMS)= 16 A;

dV_com/dt = 20 V/μs; gate open circuit;

snubberless condition

BTA316-800CT

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3Q Triac

bidc2-007

bidc2-008

(1)

L(25°C)

GT(25°C)

(2)

(3)

- 50

100

150

-50

100

150

T (°C)

Fig. 8. Normalized latching current as a function of

junction temperature

(1) T2- G-

(2) T2+ G-

(3) T2+ G+

Fig. 7. Normalized gate trigger current as a function of

junction temperature

bidc2-010

bidc2-009

(A)

H(25°C)

(1) (2) (3)

-50

100

150

(V)

T (°C)

V_o= 1.053 V; R_s= 0.0216 Ω

(1) T_j= 150 °C; typical values

Fig. 9. Normalized holding current as a function of

junction temperature

(2) T_j= 150 °C; maximum values

(3) T_j= 25 °C; maximum values

Fig. 10. On-state current as a function of on-state voltage

BTA316-800CT

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3Q Triac

bidc2-011

1.6

GT(25°C)

1.2

0.8

0.4

-50

100

150

T (°C)

Fig. 11. Normalized gate trigger voltage as a function of junction temperature

BTA316-800CT

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11. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

SOT78

mounting

base

(1)

(2)

(3×)

(2)

(2×)

b(3×)

10 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)

(2)

(1)

UNIT

max.

4.7

4.1

1.40

1.25

0.9

0.6

1.6

1.0

1.3

1.0

0.7

0.4

16.0

15.2

6.6

5.9

10.3

9.7

15.0 3.30

12.8 2.79

3.8

3.5

3.0

2.7

2.6

2.2

2.54

3.0

Notes

1. Lead shoulder designs may vary.

2. Dimension includes excess dambar.

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC

JEDEC

JEITA

08-04-23

08-06-13

SOT78

SC-46

3-lead TO-220AB

BTA316-800CT

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Right to make changes — WeEn Semiconductors reserves the right to

make changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

12. Legal information

Suitability for use — WeEn Semiconductors products are not designed,

authorized or warranted to be suitable for use in life support, life-critical

or safety-critical systems or equipment, nor in applications where failure

or malfunction of an WeEn Semiconductors product can reasonably

be expected to result in personal injury, death or severe property or

environmental damage. WeEn Semiconductors and its suppliers accept no

liability for inclusion and/or use of WeEn Semiconductors products in such

equipment or applications and therefore such inclusion and/or use is at the

customer’s own risk.

Data sheet status

Document

Product

Definition

status [1][2] status [3]

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Product

[short] data

sheet

Production

This document contains the product

specification.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. WeEn Semiconductors makes

no representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

lease consult the most recently issued document before initiating or

completing a design.

]

Customers are responsible for the design and operation of their applications

and products using WeEn Semiconductors products, and WeEn

Semiconductors accepts no liability for any assistance with applications or

customer product design. It is customer’s sole responsibility to determine

whether the WeEn Semiconductors product is suitable and fit for the

customer’s applications and products planned, as well as for the planned

application and use of customer’s third party customer(s). Customers should

provide appropriate design and operating safeguards to minimize the risks

associated with their applications and products.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.ween-semi.com.

Definitions

WeEn Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default

in the customer’s applications or products, or the application or use by

customer’s third party customer(s). Customer is responsible for doing all

necessary testing for the customer’s applications and products using WeEn

Semiconductors products in order to avoid a default of the applications

and the products or of the application or use by customer’s third party

customer(s). WeEn does not accept any liability in this respect.

Draft — The document is a draft version only. The content is still under

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representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences

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Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the

relevant full data sheet, which is available on request via the local WeEn

Semiconductors sales office. In case of any inconsistency or conflict with the

short data sheet, the full data sheet shall prevail.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

WeEn Semiconductors and its customer, unless WeEn Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the WeEn Semiconductors product

is deemed to offer functions and qualities beyond those described in the

Product data sheet.

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Export control — This document as well as the item(s) described herein

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Disclaimers

Non-automotive qualified products — Unless this data sheet expressly

states that this specific WeEn Semiconductors product is automotive

qualified, the product is not suitable for automotive use. It is neither qualified

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WeEn Semiconductors accepts no liability for inclusion and/or use of non-

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Limited warranty and liability — Information in this document is believed

to be accurate and reliable. However, WeEn Semiconductors does not

give any representations or warranties, expressed or implied, as to the

accuracy or completeness of such information and shall have no liability for

the consequences of use of such information. WeEn Semiconductors takes

no responsibility for the content in this document if provided by an information

source outside of WeEn Semiconductors.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards,

customer (a) shall use the product without WeEn Semiconductors’ warranty

of the product for such automotive applications, use and specifications, and

(b) whenever customer uses the product for automotive applications beyond

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any liability, damages or failed product claims resulting from customer

design and use of the product for automotive applications beyond WeEn

Semiconductors’ standard warranty and WeEn Semiconductors’ product

specifications.

In no event shall WeEn Semiconductors be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation -

lost profits, lost savings, business interruption, costs related to the removal

or replacement of any products or rework charges) whether or not such

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Notwithstanding any damages that customer might incur for any reason

whatsoever, WeEn Semiconductors’ aggregate and cumulative liability

towards customer for the products described herein shall be limited in

accordance with the Terms and conditions of commercial sale of WeEn

Semiconductors.

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Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

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13. Contents

1. General description.......................................................1

2. Features and beneﬁts ...................................................1

3. Applications...................................................................1

4. Quick reference data.....................................................1

5. Pinning information.......................................................2

6. Ordering information.....................................................2

7. Marking...........................................................................2

8. Limiting values ..............................................................3

9. Thermal characteristics................................................5

10. Characteristics.............................................................6

11. Package outline ...........................................................9

12. Legal information ......................................................10

13. Contents.....................................................................12

For more information, please visit: http://www.ween-semi.com

For sales ofﬁce addresses, please send an email to: salesaddresses@ween-semi.com

Date of release: 26 September 2017

BTA316-800CT

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Product data sheet

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BTA316-800CT [WEEN]

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