BTA316-800ET [NXP]
16 A three-quadrant high commutation triac; 16 A三象限高可控硅整流
| 型号： | BTA316-800ET |
| 厂家： | 
NXP |
| 描述： | 16 A three-quadrant high commutation triac |
| 文件： | 总13页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BTA316-800ET
16 A three-quadrant high commutation triac
Rev. 01 — 29 March 2010
Product data sheet
1. Product profile
1.1 General description
Planar passivated, new generation, high commutation, high operating junction
temperature, three-quadrant triac in a SOT78 plastic package.
1.2 Features and benefits
Hi-Com triac with maximum false
Sensitive gate for direct triggering from
trigger immunity
microcontrollers and logic ICs
High operating junction temperature
Planar passivated
Triggering in three quadrants only
1.3 Applications
Applications subject to high
High power motor controls in washing
temperature
machines and vacuum cleaners
Electronic thermostats, heating and
Refrigeration and air-conditioner
cooking controls
compressor controls
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
Min
Typ
Max Unit
VDRM
ITSM
repetitive peak
off-state voltage
-
-
800
V
non-repetitive peak
on-state current
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; see Figure 4 and 5
-
-
140
A
Tj
junction temperature
-
-
-
-
150
16
°C
A
IT(RMS)
RMS on-state
current
full sine wave; Tmb ≤ 126 °C;
see Figure 3, 1 and 2
Static characteristics
IGT gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; see Figure 7
-
-
-
-
-
-
10
10
10
mA
mA
mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; see Figure 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; see Figure 7
BTA316-800ET
NXP Semiconductors
16 A three-quadrant high commutation triac
2. Pinning information
Table 2.
Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
T1
T2
G
main terminal 1
main terminal 2
gate
mb
T2
T1
G
2
3
sym051
mb
T2
mounting base; main terminal 2
1
2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BTA316-800ET
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
TO-220AB
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDRM
repetitive peak off-state
voltage
-
800
V
IT(RMS)
ITSM
RMS on-state current
full sine wave; Tmb ≤ 126 °C; see Figure 3, 1 and 2
-
-
16
A
A
non-repetitive peak
on-state current
full sine wave; Tj(init) = 25 °C; tp = 20 ms;
see Figure 4 and 5
140
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
tp = 10 ms; sine-wave pulse
-
-
-
150
98
A
A2s
I2t
I2t for fusing
dIT/dt
rate of rise of on-state IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs
current
100
A/µs
IGM
peak gate current
peak gate power
-
2
A
PGM
PG(AV)
Tstg
Tj
-
5
W
W
°C
°C
average gate power
storage temperature
junction temperature
over any 20 ms period
-
0.5
150
150
-40
-
BTA316-800ET_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 29 March 2010
2 of 13
BTA316-800ET
NXP Semiconductors
16 A three-quadrant high commutation triac
003aab685
003aab777
60
20
IT(RMS)
(A)
16
IT(RMS)
(A)
50
40
30
20
10
0
12
8
4
0
-50
10-2
10-1
1
10
0
50
100
150
mb (°C)
T
surge duration (s)
Fig 1. RMS on-state current as a function of surge
duration; maximum values
Fig 2. RMS on-state current as a function of mounting
base temperature; maximum values
003aab689
20
conduction form
α= 180°
Ptot
(W)
angle,
(degrees)
factor
a
120°
90°
30
60
90
120
180
4
15
10
5
2.8
2.2
1.9
1.57
α
60°
30°
0
0
2
4
6
8
10
12
14
16
IT(RMS) (A)
Fig 3. Total power dissipation as a function of RMS on-state current; maximum values
BTA316-800ET_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 29 March 2010
3 of 13
BTA316-800ET
NXP Semiconductors
16 A three-quadrant high commutation triac
003aab668
160
ITSM
(A)
120
80
I
I
TSM
T
40
t
1/f
= 25 °C max
T
j(init)
0
1
10
102
103
number of cycles (n)
Fig 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
003aab671
103
ITSM
(A)
(1)
102
I
I
TSM
t
T
t
p
T
= 25 °C max
j(init)
10
10-5
10-4
10-3
10-2
10-1
t (s)
p
Fig 5. Non-repetitive peak on-state current as a function of pulse duration; maximum values
BTA316-800ET_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 29 March 2010
4 of 13
BTA316-800ET
NXP Semiconductors
16 A three-quadrant high commutation triac
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
1.2
1.7
-
Unit
K/W
K/W
K/W
thermal resistance from junction to
mounting base
full cycle; see Figure 6
half cycle; see Figure 6
in free air
-
-
-
-
-
Rth(j-a)
thermal resistance from junction to
ambient
60
003aab776
10
Z
th(j-mb)
(K/W)
(1)
(2)
1
−1
−2
−3
10
10
10
P
t
t
p
−5
−4
−3
−2
−1
10
10
10
10
10
1
10
t
(s)
p
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
BTA316-800ET_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 29 March 2010
5 of 13
BTA316-800ET
NXP Semiconductors
16 A three-quadrant high commutation triac
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
IGT gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C;
see Figure 7
-
-
-
-
-
-
-
-
-
-
-
-
10
10
10
25
30
30
mA
mA
mA
mA
mA
mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C;
see Figure 7
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C;
see Figure 7
IL
latching current
VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C;
see Figure 8
VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C;
see Figure 8
VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C;
see Figure 8
IH
holding current
VD = 12 V; Tj = 25 °C; see Figure 9
IT = 18 A; Tj = 25 °C; see Figure 10
-
-
-
-
15
mA
V
VT
VGT
on-state voltage
gate trigger voltage
1.3
0.8
1.5
1.5
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
see Figure 11
V
VD = 400 V; IT = 0.1 A; Tj = 150 °C;
see Figure 11
0.25
-
-
-
V
ID
off-state current
VD = 800 V; Tj = 150 °C
0.4
2
mA
Dynamic characteristics
dVD/dt
rate of rise of off-state VDM = 536 V; Tj = 150 °C; exponential
20
-
-
-
-
-
-
V/µs
A/ms
A/ms
voltage
waveform
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 150 °C; IT(RMS) = 16 A;
dVcom/dt = 10 V/µs; gate open circuit
1.2
0.8
VD = 400 V; Tj = 150 °C; IT(RMS) = 16 A;
dVcom/dt = 20 V/µs; "without snubber"
condition; gate open circuit
VD 400 V; Tj = 150 °C; IT(RMS) = 16 A;
dVcom/dt = 1 V/µs; gate open circuit
6
-
-
-
-
A/ms
µs
tgt
gate-controlled turn-on ITM = 20 A; VD = 800 V; IG = 0.1 A;
time dIG/dt = 5 A/µs
2
BTA316-800ET_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 29 March 2010
6 of 13
BTA316-800ET
NXP Semiconductors
16 A three-quadrant high commutation triac
001aag166
001aag165
3
3
I
GT
I
L
(1)
(2)
I
I
L(25°C)
GT(25°C)
2
2
(3)
1
1
0
−50
0
−50
0
50
100
150
0
50
100
150
T (°C)
j
T (°C)
j
Fig 8. Normalized latching current as a function of
junction temperature
Fig 7. Normalized gate trigger current as a function of
junction temperature
003aab666
001aag167
3
50
IT
(A)
I
H
I
H(25°C)
40
2
30
(1)
(2)
(3)
20
10
0
1
0
−50
0
0.5
1
1.5
2
0
50
100
150
T (°C)
j
VT (V)
Fig 9. Normalized holding current as a function of
junction temperature
Fig 10. On-state current as a function of on-state
voltage
BTA316-800ET_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 29 March 2010
7 of 13
BTA316-800ET
NXP Semiconductors
16 A three-quadrant high commutation triac
001aag168
1.6
V
GT
V
GT(25°C)
1.2
0.8
0.4
−50
0
50
100
150
T (°C)
j
Fig 11. Normalized gate trigger voltage as a function of junction temperature
BTA316-800ET_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 29 March 2010
8 of 13
BTA316-800ET
NXP Semiconductors
16 A three-quadrant high commutation triac
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
D
1
base
D
(1)
(1)
L
1
L
2
Q
(2)
b
1
L
(3×)
(2)
b
2
(2×)
1
2
3
b(3×)
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
2
(2)
(2)
(1)
1
UNIT
mm
A
A
b
b
b
c
D
D
1
E
e
L
L
p
q
Q
1
1
2
max.
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0 3.30
12.8 2.79
3.8
3.5
3.0
2.7
2.6
2.2
2.54
3.0
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
08-04-23
08-06-13
SOT78
SC-46
3-lead TO-220AB
Fig 12. Package outline SOT78 (TO-220AB)
BTA316-800ET_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 29 March 2010
9 of 13
BTA316-800ET
NXP Semiconductors
16 A three-quadrant high commutation triac
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BTA316-800ET_1
20100329
Product data sheet
-
-
BTA316-800ET_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 29 March 2010
10 of 13
BTA316-800ET
NXP Semiconductors
16 A three-quadrant high commutation triac
9. Legal information
9.1 Data sheet status
Document status [1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
9.2 Definitions
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
9.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BTA316-800ET_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 29 March 2010
11 of 13
BTA316-800ET
NXP Semiconductors
16 A three-quadrant high commutation triac
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BTA316-800ET_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 29 March 2010
12 of 13
BTA316-800ET
NXP Semiconductors
16 A three-quadrant high commutation triac
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 29 March 2010
Document identifier: BTA316-800ET_1
相关型号：
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