TSMS3700 [VITESSE]
GaAs Infrared Emitting Diode in SMT Package; 砷化镓红外发光二极管在SMT封装
| 型号： | TSMS3700 |
| 厂家： | 
VITESSE SEMICONDUCTOR CORPORATION |
| 描述： | GaAs Infrared Emitting Diode in SMT Package |
| 文件： | 总6页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSMS3700
Vishay Telefunken
GaAs Infrared Emitting Diode in SMT Package
Description
TSMS3700 is a standard GaAs infrared emitting diode
in a miniature PL–CC–2 package.
Itsflatwindowprovidesawideaperture, makingitideal
for use with external optics.
The diode is case compatible to the TEMT3700 photo-
transistor, allowing the user to assemble his own
optical interrupters.
Features
SMT IRED with high radiant power
Low forward voltage
94 8553
Compatible with automatic placement equipment
EIA and ICE standard package
Suitable for infrared, vapor phase and wave-
solder process
Available in 8 mm tape
Suitable for DC and high pulse current operation
Wide angle of half intensity ϕ = ± 60
Peak wavelength = 950 nm
p
High reliability
Matching to TEMT3700 phototransistor
Applications
Infrared source in tactile keyboards
IR diode in low space applications
Matching with phototransistor TEMT3700 in reflective sensors
PCB mounted infrared sensors
Infrared emitter for miniature light barriers
Document Number 81037
Rev. 3, 01-Aug-00
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1 (6)
TSMS3700
Vishay Telefunken
Absolute Maximum Ratings
T
amb
= 25 C
Parameter
Reverse Voltage
Test Conditions
Symbol
Value
5
Unit
V
V
R
Forward Current
I
100
200
1.5
170
mA
mA
A
mW
C
C
C
C
K/W
F
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
t /T = 0.5, t = 100 s
t = 100 s
p
I
FM
p
p
I
FSM
P
T
V
100
j
T
–55...+100
–55...+100
260
amb
T
stg
t
10sec
T
sd
on PC board
R
450
thJA
Basic Characteristics
T
amb
= 25 C
Parameter
Forward Voltage
Test Conditions
Symbol Min
Typ
1.3
1.8
Max
1.7
Unit
V
V
I = 100 mA, t = 20 ms
V
F
V
F
F
p
I = 1 A, t = 100 s
F
p
Temp. Coefficient of V
Reverse Current
I = 100mA
V = 5 V
R
TK
VF
–1.3
mV/K
A
F
F
I
R
100
Junction Capacitance
Radiant Intensity
V = 0 V, f = 1 MHz, E = 0
C
30
4.5
35
pF
R
j
I = 100 mA, t = 20 ms
I
I
1.6
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
F
p
e
I = 1.5 A, t = 100 s
F
p
e
Radiant Power
I = 100 mA, t = 20 ms
15
F
p
e
Temp. Coefficient of
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of
Rise Time
I = 100 mA
F
TK
ϕ
–0.8
±60
950
50
0.2
800
400
800
400
e
e
p
I = 100 mA
F
p
I = 100 mA
F
I = 100 mA
TK
p
F
I = 20 mA
t
r
t
r
F
I = 1 A
ns
ns
ns
F
Fall Time
I = 20 mA
t
t
F
f
I = 1 A
F
f
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2 (6)
Document Number 81037
Rev. 3, 01-Aug-00
TSMS3700
Vishay Telefunken
Typical Characteristics (Tamb = 25 C unless otherwise specified)
4
3
2
1
10
10
10
10
250
200
150
100
50
R
thJA
0
10
–1
0
10
100
4
0
20
40
60
80
0
1
2
3
94 8029 e
T
amb
– Ambient Temperature ( °C )
94 7996 e
V – Forward Voltage ( V )
F
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Forward Current vs. Forward Voltage
125
1.2
100
75
1.1
I = 10 mA
F
1.0
0.9
0.8
0.7
R
thJA
50
25
0
100
100
0
20
40
60
80
0
20
40
60
80
94 7916 e
T
amb
– Ambient Temperature ( °C )
94 7990 e
T
amb
– Ambient Temperature ( °C )
Figure 2. Forward Current vs. Ambient Temperature
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
10000
100
T
amb
60°C
t /T=0.005
p
0.01
1000
100
10
0.02
10
1
0.05
0.2
0.5
DC
0.1
1
0.01
0.1
100
0.1
1
10
0
1
2
3
4
10
10
10
10
10
95 9985
t – Pulse Length ( ms )
p
94 7956 e
I – Forward Current ( mA )
F
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 6. Radiant Intensity vs. Forward Current
Document Number 81037
Rev. 3, 01-Aug-00
www.vishay.com
3 (6)
TSMS3700
Vishay Telefunken
1.25
1.0
1000
100
10
0.75
0.5
0.25
0
1
I = 100 mA
F
0.1
1000
900
950
0
1
2
3
4
10
10
10
10
10
94 8012 e
I – Forward Current ( mA )
F
94 7994 e
– Wavelength ( nm )
Figure 7. Radiant Power vs. Forward Current
Figure 9. Relative Radiant Power vs. Wavelength
0°
10
°
20
°
1.6
30°
1.2
I = 20 mA
F
40°
1.0
0.9
0.8
0.4
0
50°
60°
0.8
0.7
70°
80°
140
0.6
–10 0 10
50
100
0.6
0.4
0.2
0
0.2
0.4
94 7993 e
T
amb
– Ambient Temperature ( °C )
94 8013 e
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
Figure 10. Relative Radiant Intensity vs.
Angular Displacement
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4 (6)
Document Number 81037
Rev. 3, 01-Aug-00
TSMS3700
Vishay Telefunken
Dimensions in mm
95 11314
Document Number 81037
Rev. 3, 01-Aug-00
www.vishay.com
5 (6)
TSMS3700
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
6 (6)
Document Number 81037
Rev. 3, 01-Aug-00
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