TSN10A80 [NIEC]
THYRISTOR - 10A 800V TO-262; 晶闸管 - 10A 800V TO- 262
| 型号： | TSN10A80 |
| 厂家： | 
NIHON INTER ELECTRONICS CORPORATION |
| 描述： | THYRISTOR - 10A 800V TO-262 |
| 文件： | 总2页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10A 800V TO-262
THYRISTOR Type：TSN10A80
Cnstruction :Planner Structure ReverseConducting
Futures : High VDRM & Permissonabledi/dt
Application : StaterforHID LumpBullust Circuit
weight: 1.45g
Max. RatedValue
Absolute Maximum Ratings
Rating
Symbol
VDRM
Conditions
Unit
V
Repetitive Peakoff-state Voltage
800
Tj=25°C
Tc ≤ 100°C, VDM ≤ 400V
IG ≥ 80mA, dig/dt ≥ 0.5A/µs
tw ≤ 1.0µs，di/dt ≤ 1500A/µs
duty ≤ 0.005℅
Repetitive PeakOn-State Current *
ITRM
IFRM
di/dt
500
A
A
Tc ≤ 100°C, tw ≤ 1.0µs
duty ≤ 0.005℅
Repetitive PeakForward Current *
500
Tc ≤ 100°C, VDM ≤ 400V
IG ≥ 80mA, dig/dt ≥ 0.5A/µs
Critical Rate of Rise of Off-State
Voltage
Permissible Rate of Down of
On-State Current *
1500
A/µs
I
TM
≤ 500A, tw ≤ 1.0µs
50Hz, 1min., withoutCoolingFin
PeakGatePower
PGM
PG(AV)
IGM
5
W
W
A
f ≥ 50Hz, duty ≤ 10℅
AverageGatePower
0.5
PeakForwardGateCurrent
PeakForwardGateVoltage
PeakReverseGateVoltage
Operating JunctionTemperatureRange
StorageTemperatureRange
2
f ≥ 50Hz, duty ≤ 10℅
VGM
VRGM
Tjw
Tstg
10
V
5
V
-40 to +125
-40 to +150
°C
°C
* notes : Test Circuit & Current Wave Form
R
SW
L
0.5•ITM
I
TM
0.1•ITM
t
VDM
C
tw
ThyristorSample
di/dt=0.4• ITM/t
Electrical Characteristics (Tj =25°C)
Symbol
Conditions
VDM =VDRM
Min.
Typ.
Max.
100
1.50
1.50
20
Unit
Characteristics
IDM
VTM
VFM
IGT
Peak Off-State Current
Peak On-State Voltage
Peak Forward Voltage
GateTriggerCurrent
GateTriggerVoltage
HoldingCurrent
µA
A
ITM=20A
A
I =10A
FM
mA
V
VDM=6V, RL=10ohm
VGT
IH
1.0
IG=50mA, ITM=1A
IG=50mA
7
mA
mA
°C/W
°C/W
LatchingCurrent
I
L
13
ThermalResistance
Rth(j-c)
Rth(j-a)
Junction to Case
Junction to Ambient
5
ThermalResistance
80
TSN10A08 OUTLINE DRAWING (Dimension:mm)
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