VS-HFA08TA60CSTRLPBF [VISHAY]
Rectifier Diode, 1 Phase, 2 Element, 4A, Silicon, HALOGEN FREE AND ROHS COMPLIANT, D2PAK-3;
| 型号： | VS-HFA08TA60CSTRLPBF |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 4A, Silicon, HALOGEN FREE AND ROHS COMPLIANT, D2PAK-3 功效 二极管 |
| 文件： | 总8页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-HFA08TA60CSPbF
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 2 x 4 A
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low IRRM
• Very low Qrr
Base
common
cathode
2
• Specified at operating conditions
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Halogen-free according to IEC 61249-2-21
definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
2
1
3
D2PAK
Common
cathode
Anode
Anode
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA08TA60CSPbF is a state of the art center tap
ultrafast recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 4 A per
leg continuous current, the VS-HFA08TA60CSPbF is
especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED® product line features extremely low values of
peak recovery current (IRRM) and does not exhibit any
tendency to “snap-off” during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA08TA60CSPbF is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
PRODUCT SUMMARY
VR
VF at 4 A at 25 °C
IF(AV)
600 V
1.8 V
2 x 4 A
17 ns
t
rr (typical)
TJ (maximum)
Qrr
150 °C
40 nC
dI(rec)M/dt
280 A/μs
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
VR
600
V
per leg
per device
4
Maximum continuous forward current
IF
TC = 100 °C
8
A
Single pulse forward current
IFSM
IFRM
25
Maximum repetitive forward current
16
TC = 25 °C
25
10
Maximum power dissipation
PD
W
T
C = 100 °C
Operating junction and storage temperature range
TJ, TStg
- 55 to + 150
°C
Document Number: 94596
Revision: 24-Feb-10
For technical questions, contact: diodestech@vishay.com
www.vishay.com
1
VS-HFA08TA60CSPbF
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 2 x 4 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
VBR
IR = 100 μA
600
-
-
IF = 4.0 A
IF = 8.0 A
-
-
-
-
-
-
-
1.5
1.8
1.4
0.17
44
1.8
2.2
1.7
3.0
300
8.0
-
V
Maximum forward voltage
VFM
See fig. 1
IF = 4.0 A, TJ = 125 °C
VR = VR rated
Maximum reverse
leakage current
IRM
See fig. 2
See fig. 3
μA
TJ = 125 °C, VR = 0.8 x VR rated
VR = 200 V
Junction capacitance
Series inductance
CT
LS
4.0
8.0
pF
nH
Measured lead to lead 5 mm from package body
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
17
MAX.
-
UNITS
trr
-
-
-
-
-
-
-
Reverse recovery time
See fig. 5, 6 and 16
trr1
28
42
ns
trr2
TJ = 125 °C
38
57
IRRM1
IRRM2
Qrr1
TJ = 25 °C
2.9
3.7
40
5.2
6.7
60
Peak recovery current
See fig. 7 and 8
A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IF = 4.0 A
dIF/dt = 200 A/μs
Reverse recovery charge
See fig. 9 and 10
nC
VR = 200 V
Qrr2
70
105
Peak rate of fall of recovery
current during tb
See fig. 11 and 12
dI(rec)M/dt1 TJ = 25 °C
dI(rec)M/dt2 TJ = 125 °C
-
-
280
235
-
-
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Lead temperature
Tlead
0.063" from case (1.6 mm) for 10 s
-
-
300
°C
Thermal resistance,
junction to case
RthJC
RthJA
-
-
-
-
5.0
80
K/W
Thermal resistance,
junction to ambient
Typical socket mount
-
-
2.0
-
-
g
Weight
0.07
oz.
6.0
(5.0)
12
(10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
-
Case style D2PAK
HFA08TA60CS
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2
For technical questions, contact: diodestech@vishay.com
Document Number: 94596
Revision: 24-Feb-10
VS-HFA08TA60CSPbF
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 2 x 4 A
100
10
1000
100
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
0.1
TJ = 25 °C
0.01
0.1
0.001
0
100
200
300
400
500
0
1
2
3
4
5
6
VFM - Forward Voltage Drop (V)
94596_02
VR - Reverse Voltage (V)
94596_01
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage
100
TJ = 25 °C
10
1
1
10
100
1000
94596_03
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
t1
t2
0.1
Single pulse
(thermal resistance)
Notes:
D = 0.01
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
94596_04
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 94596
Revision: 24-Feb-10
For technical questions, contact: diodestech@vishay.com
www.vishay.com
3
VS-HFA08TA60CSPbF
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 2 x 4 A
200
50
VR = 200 V
TJ = 125 °C
TJ = 25 °C
IF = 8 A
IF = 4 A
45
160
IF = 8 A
IF = 4 A
40
35
30
120
80
40
0
VR = 200 V
TJ = 125 °C
TJ = 25 °C
25
20
100
100
1000
1000
94596_07
dIF/dt (A/μs)
94596_05
dIF/dt (A/μs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 7 - Typical Stored Charge vs. dIF/dt
14
1000
VR = 200 V
TJ = 125 °C
TJ = 25 °C
12
10
8
IF = 8 A
IF = 4 A
IF = 8 A
IF = 4 A
6
4
VR = 200 V
TJ = 125 °C
TJ = 25 °C
2
0
100
100
100
1000
1000
94596_06
dIF/dt (A/μs)
Fig. 6 - Typical Recovery Current vs. dIF/dt
94596_08
dIF/dt (A/μs)
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
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For technical questions, contact: diodestech@vishay.com
Document Number: 94596
Revision: 24-Feb-10
VS-HFA08TA60CSPbF
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 2 x 4 A
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94596
Revision: 24-Feb-10
For technical questions, contact: diodestech@vishay.com
www.vishay.com
5
VS-HFA08TA60CSPbF
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 2 x 4 A
ORDERING INFORMATION TABLE
Device code
VS- HF
A
08
TA
60
C
S
TRL PbF
1
2
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
8
9
-
-
-
-
-
-
-
-
-
HPP product suffix
HEXFRED® family
Process designator: A = Electron irradiated
Current rating (08 = 8 A)
Package outline (TA = TO-220, 3 leads)
Voltage rating (60 = 600 V)
Circuit configuration (C = Common cathode)
S = D2PAK
None = Tube (50 pieces)
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
PbF = Lead (Pb)-free
-
10
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95046
www.vishay.com/doc?95054
www.vishay.com/doc?95032
Part marking information
Packaging information
www.vishay.com
6
For technical questions, contact: diodestech@vishay.com
Document Number: 94596
Revision: 24-Feb-10
Outline Dimensions
Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC outline D2PAK (SMD-220)
B
A
Pad layout
A
(2)(3)
E
A
(E)
c2
11.00
MIN.
(0.43)
(3)
D
L1
4
2
9.65
MIN.
(0.38)
(D1) (3)
Detail A
17.90 (0.70)
15.00 (0.625)
H
(2)
1
3
3.81
MIN.
L2
(0.15)
B
B
2.32
MIN.
(0.08)
A
B
2.64 (0.103)
2.41 (0.096)
(3)
E1
2 x b2
2 x b
C
c
View A - A
0.004 M
Base
Metal
0.010 M
M
B
A
Plating
(4)
b1, b3
2 x
e
H
Gauge
plane
(4)
c1
(c)
B
0° to 8°
Seating
plane
Lead assignments
L3
A1
Lead tip
(b, b2)
L
Diodes
L4
Section B - B and C - C
Scale: None
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Detail “A”
Rotated 90 °CW
Scale: 8:1
MILLIMETERS
SYMBOL
INCHES
MILLIMETERS
INCHES
NOTES
SYMBOL
NOTES
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
MAX.
4.83
0.254
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
MIN.
6.86
9.65
7.90
MAX.
8.00
MIN.
MAX.
0.315
0.420
0.346
A
A1
b
D1
E
0.270
0.380
0.311
3
2, 3
3
10.67
8.80
E1
e
b1
b2
b3
c
4
4
4
2
2.54 BSC
0.100 BSC
H
14.61
1.78
-
15.88
2.79
1.65
1.78
0.575
0.070
-
0.625
0.110
0.066
0.070
L
L1
L2
L3
L4
3
c1
c2
D
1.27
0.050
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Outline conforms to JEDEC outline TO-263AB
Document Number: 95046
Revision: 31-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
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