VS-8ETH03STRLPBF [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 8A, 300V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, D2PAK-3;
| 型号： | VS-8ETH03STRLPBF |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 8A, 300V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, D2PAK-3 高帧率高马力 二极管 |
| 文件： | 总9页 (文件大小：273K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-8ETH03SPbF, VS-8ETH03-1PbF
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
TO-263AB (D2PAK)
TO-262AA
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Base
cathode
• AEC-Q101 qualified
2
2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
Vishay Semiconductors 300 V series are the state of the art
hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop and hyperfast
recovery time.
3
1
3
1
N/C
Anode
N/C
Anode
VS-8ETH03-1PbF
VS-8ETH03SPbF
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package
TO-263AB (D2PAK), TO-262AA
IF(AV)
8 A
300 V
VR
VF at IF
trr
0.83 V
35 ns
TJ max.
Diode variation
175 °C
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VRRM
TEST CONDITIONS
MAX.
UNITS
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
300
V
IF(AV)
TC = 155 °C
TC = 25 °C
8
A
IFSM
100
TJ, TStg
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
IF = 8 A
300
-
-
V
-
-
-
-
-
-
1.0
0.83
0.02
6.0
31
1.25
1.00
20
Forward voltage
VF
IR
IF = 8 A, TJ = 125 °C
VR = VR rated
Reverse leakage current
μA
TJ = 125 °C, VR = VR rated
VR = 300 V
200
-
Junction capacitance
Series inductance
CT
LS
pF
nH
Measured lead to lead 5 mm from package body
8
-
Revision: 09-Jul-15
Document Number: 94025
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8ETH03SPbF, VS-8ETH03-1PbF
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A, dIF/dt = - 50 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
-
35
-
Reverse recovery time
trr
27
ns
TJ = 125 °C
40
-
IF = 8 A
dIF/dt = - 200 A/μs
TJ = 25 °C
2.2
5.3
30
-
Peak recovery current
IRRM
A
TJ = 125 °C
-
VR = 200 V
TJ = 25 °C
-
Reverse recovery charge
Qrr
nC
TJ = 125 °C
106
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction and storage
temperature range
TJ, TStg
-65
-
175
°C
Thermal resistance,
junction to case per leg
RthJC
RthJA
RthCS
-
-
-
1.45
-
2.5
70
-
Thermal resistance,
junction to ambient per leg
Typical socket mount
°C/W
Thermal resistance,
case to heatsink
Mounting surface, flat, smooth and
greased
0.2
-
-
2.0
-
-
g
Weight
0.07
oz.
6.0
(5.0)
12
(10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
-
Case style TO-263AB (D2PAK)
Case style TO-262
8ETH03S
8ETH03-1
Revision: 09-Jul-15
Document Number: 94025
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8ETH03SPbF, VS-8ETH03-1PbF
www.vishay.com
Vishay Semiconductors
100
1000
TJ = 175 °C
100
TJ = 150 °C
10
1
TJ = 125 °C
TJ = 100 °C
10
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
0.1
TJ = 25 °C
0.01
0.001
1
0
50
100
150
200
250
300
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VR - Reverse Voltage (V)
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
100
TJ = 25 °C
10
0
50
100
150
200
250
300
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t1
0.1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
Single pulse
(thermal resistance)
.
.
0.01
0.00001
0.0001
0.001
0.01
0.1 1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 09-Jul-15
Document Number: 94025
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8ETH03SPbF, VS-8ETH03-1PbF
www.vishay.com
Vishay Semiconductors
180
170
160
150
140
130
100
DC
IF = 8 A , TJ = 125 °C
Square wave (D = 0.50)
Rated VR applied
IF = 8 A , TJ = 25 °C
See note (1)
10
100
0
2
4
6
8
10
12
14
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
10
1000
8
RMS limit
IF = 8 A , TJ = 125 °C
IF = 8 A , TJ = 25 °C
6
D = 0.01
D = 0.02
100
4
D = 0.05
D = 0.10
D = 0.20
2
D = 0.50
DC
10
100
0
0
2
4
6
8
10
12
1000
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
dIF/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
Revision: 09-Jul-15
Document Number: 94025
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8ETH03SPbF, VS-8ETH03-1PbF
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 09-Jul-15
Document Number: 94025
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-8ETH03SPbF, VS-8ETH03-1PbF
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
8
E
T
H
03
S
TRL PbF
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
-
-
-
-
-
-
Vishay Semiconductors product
Current rating (8 A)
E = single diode
T = TO-220, D2PAK
H = hyperfast rectifier
Voltage rating (03 = 300 V)
S = D2PAK
-
-1 = TO-262
-
8
9
None = tube (50 pieces)
TRL = tape and reel (left oriented, for D2PAK package)
TRR = tape and reel (right oriented, for D2PAK package)
PbF = lead (Pb)-free
-
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95014
www.vishay.com/doc?95008
www.vishay.com/doc?95032
Dimensions
Part marking information
Packaging information
Revision: 09-Jul-15
Document Number: 94025
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
D2PAK, TO-262
DIMENSIONS - D2PAK in millimeters and inches
Conforms to JEDEC outline D2PAK (SMD-220)
B
A
Pad layout
A
(2)(3)
E
A
(E)
c2
110ꢀꢀ
MIN0
(ꢀ0ꢁ3)
(3)
D
L1
ꢁ
2
9065
MIN0
(ꢀ038)
(D1) (3)
Detail A
1709ꢀ (ꢀ07ꢀ)
150ꢀꢀ (ꢀ0625)
H
(2)
1
3
3081
MIN0
L2
(ꢀ015)
B
B
2032
MIN0
(ꢀ0ꢀ8)
A
B
206ꢁ (ꢀ01ꢀ3)
20ꢁ1 (ꢀ0ꢀ96)
(3)
E1
2 x b2
2 x b
C
c
View A - A
ꢀ0ꢀꢀꢁ M
Base
Metal
ꢀ0ꢀ1ꢀ M
M
B
A
Plating
(ꢁ)
b1, b3
2 x
e
H
Gauge
plane
(ꢁ)
c1
(c)
B
ꢀ° to 8°
L3
Seating
plane
Lead assignments
A1
Lead tip
(b, b2)
L
Diodes
Lꢁ
Detail “A”
Rotated 9ꢀ °CW
Scale: 8:1
Section B - B and C - C
Scale: None
10 - Anode (two die)/open (one die)
20, ꢁ0 - Cathode
30 - Anode
MILLIMETERS
SYMBOL
INCHES
MILLIMETERS
INCHES
NOTES
SYMBOL
NOTES
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
MAX.
4.83
0.254
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
MIN.
6.86
9.65
7.90
MAX.
8.00
MIN.
MAX.
0.315
0.420
0.346
A
A1
b
D1
E
0.270
0.380
0.311
3
2, 3
3
10.67
8.80
E1
e
b1
b2
b3
c
4
4
4
2
2.54 BSC
0.100 BSC
H
14.61
1.78
-
15.88
2.79
1.65
1.78
0.575
0.070
-
0.625
0.110
0.066
0.070
L
L1
L2
L3
L4
3
c1
c2
D
1.27
0.050
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
Notes
(1)
(7)
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Outline conforms to JEDEC outline TO-263AB
(2)
(3)
(4)
(5)
(6)
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Document Number: 95014
Revision: 31-Mar-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Outline Dimensions
Vishay Semiconductors
D2PAK, TO-262
DIMENSIONS - TO-262 in millimeters and inches
Modified JEDEC outline TO-262
(2) (3)
E
A
(Datum A)
B
A
c2
E
A
(3)
L1
D
Seating
plane
D1(3)
1
2
3
C
C
L2
B
B
L (2)
A
c
(3)
E1
3 x b2
3 x b
A1
Section A - A
2 x e
Base
metal
(ꢁ)
b1, b3
Plating
c
M
M
B
ꢀ0ꢀ1ꢀ
A
Lead assignments
c1
(ꢁ)
Diodes
10 - Anode (two die)/open (one die)
20, ꢁ0 - Cathode
30 - Anode
(b, b2)
Lead tip
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
SYMBOL
NOTES
MIN.
4.06
2.03
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
6.86
9.65
7.90
MAX.
4.83
3.02
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
8.00
10.67
8.80
MIN.
0.160
0.080
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
0.270
0.380
0.311
MAX.
0.190
0.119
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
0.315
0.420
0.346
A
A1
b
b1
b2
b3
c
4
4
4
c1
c2
D
2
3
D1
E
2, 3
3
E1
e
2.54 BSC
0.100 BSC
L
13.46
-
14.10
1.65
3.71
0.530
-
0.555
0.065
0.146
L1
L2
3
3.56
0.140
Notes
(1)
(6)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Outline conform to JEDEC TO-262 except A1 (maximum), b
(minimum) and D1 (minimum) where dimensions derived the
actual package outline
(2)
(3)
(4)
(5)
Controlling dimension: inches
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Document Number: 95014
Revision: 31-Mar-09
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
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statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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