VS-60EPF02PbF [VISHAY]
Fast Soft Recovery Rectifier Diode, 60 A;
| 型号： | VS-60EPF02PbF |
| 厂家： | 
VISHAY |
| 描述： | Fast Soft Recovery Rectifier Diode, 60 A |
| 文件： | 总9页 (文件大小：271K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-60EPF0.PbF, VS-60CPF0.PbF Series
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 60 A
FEATURES
TO-247AC modified
TO-247AC
• Designed and qualified according to
JEDEC-JESD47
• Compliant to RoHS Directive 2002/95/EC
Base cathode
2
Base cathode
2
APPLICATIONS
• Output rectification and freewheeling in inverters,
choppers and converters
• Input rectifications where severe restrictions on
conducted EMI should be met
1
3
1
3
Cathode
Anode
Anode
Anode
VS-60EPF..
VS-60CPF..
DESCRIPTION
The VS-60EPF..PbF and VS-60CPF..PbF fast soft recovery
rectifier series has been optimized for combined short
reverse recovery time and low forward voltage drop.
PRODUCT SUMMARY
Package
TO-247AC modified (2 pins), TO-247AC
IF(AV)
60 A
200 V, 400 V, 600 V
1.3 V
VR
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
VF at IF
IFSM
830 A
trr
70 ns
TJ max.
Diode variation
Snap factor
150 °C
Single die
0.5
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
VRRM
IF(AV)
IFSM
trr
CHARACTERISTICS
VALUES
200 to 600
60
UNITS
V
Sinusoidal waveform
A
830
1 A, 100 A/μs
70
ns
V
VF
30 A, TJ = 25 °C
1.1
TJ
- 40 to 150
°C
VOLTAGE RATINGS
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
IRRM
AT 150 °C
mA
PART NUMBER
PEAK REVERSE VOLTAGE
V
VS-60EPF02PbF, VS-60CPF02PbF
VS-60EPF04PbF, VS-60CPF04PbF
VS-60EPF06PbF, VS-60CPF06PbF
200
400
600
300
500
700
5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
TC = 106 °C, 180° conduction half sine wave
VALUES
60
UNITS
Maximum average forward current
IF(AV)
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
700
A
Maximum peak one cycle
non-repetitive surge current
IFSM
830
2450
3460
34 600
Maximum I2t for fusing
Maximum I2t for fusing
Revision: 18-Aug-11
I2t
A2s
I2t
A2s
Document Number: 94104
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPF0.PbF, VS-60CPF0.PbF Series
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
60 A, TJ = 25 °C
VALUES
1.3
UNITS
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
VFM
rt
V
m
V
5.0
TJ = 150 °C
VF(TO)
0.88
0.1
TJ = 25 °C
Maximum reverse leakage current
IRM
VR = Rated VRRM
mA
TJ = 150 °C
5.0
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL TEST CONDITIONS
VALUES
180
UNITS
ns
IFM
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
trr
IF at 60 Apk
trr
ta tb
Irr
Qrr
S
3.4
A
25 A/μs
25 °C
t
dir
dt
0.5
μC
Qrr
Typical
0.5
IRM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 40 to 150
°C
Maximum thermal resistance,
junction to case
RthJC
RthJA
RthCS
DC operation
0.4
40
Maximum thermal resistance,
junction to ambient
°C/W
Typical thermal resistance,
case to heatsink
Mounting surface, smooth and greased
0.2
6
g
Approximate weight
0.21
oz.
minimum
maximum
6 (5)
kgf · cm
(Ibf · in)
Mounting torque
Marking device
12 (10)
Case style TO-247AC modified
Case style TO-247AC
60EPF02, 60EPF04, 60EPF06
60CPF02, 60CPF04, 60CPF06
Revision: 18-Aug-11
Document Number: 94104
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPF0.PbF, VS-60CPF0.PbF Series
www.vishay.com
Vishay Semiconductors
150
140
130
120
110
100
90
140
60.PF.. Series
RthJC (DC) = 0.4 K/W
180°
120
100
80
60
40
20
0
120°
90°
60°
30°
Ø
DC
Conduction angle
RMS limit
Ø
Conduction period
120°
60°
60.PF.. Series
TJ = 150 °C
90°
180°
30°
30
0
10
20
40
50
60
70
0
20
40
60
80
100
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
150
140
130
120
110
100
90
800
700
600
500
400
300
200
At any rated load condition and with
rated VRRM applied following surge.
60.PF.. Series
RthJC (DC) = 0.4 K/W
Initial TJ = 175 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Ø
Conduction period
60°
90°
30°
120°
60.PF.. Series
DC
80
180°
0
20
40
60
100
1
10
100
Average Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
90
80
70
60
50
40
30
20
10
0
900
180°
120°
90°
60°
30°
Maximum non-repetitive surge current
versus pulse train duration.
800
700
600
500
400
300
200
100
Initial TJ = 195 °C
No voltage reapplied
Rated VRRM reapplied
RMS limit
Ø
Conduction angle
60.PF.. Series
TJ = 150 °C
60.PF.. Series
0
10
20
30
40
50
60
70
0.01
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 18-Aug-11
Document Number: 94104
3
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPF0.PbF, VS-60CPF0.PbF Series
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Vishay Semiconductors
1000
100
10
TJ = 25 °C
TJ = 150 °C
60.PF.. Series
1
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
0.20
0.15
0.10
0.05
4
IFM = 60 A
IFM = 30 A
60.PF.. Series
TJ = 25 °C
IFM = 60 A
IFM = 30 A
3
2
1
0
IFM = 10 A
IFM = 5 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
160
60.PF.. Series
TJ = 25 °C
IFM = 1 A
160
0
40
80
120
200
0
40
80
120
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
0.45
5
60.PF.. Series
TJ = 150 °C
IFM = 60 A
0.40
0.35
0.30
0.25
0.20
0.15
0.10
4
IFM = 30 A
IFM = 60 A
IFM = 30 A
3
IFM = 10 A
IFM = 10 A
IFM = 5 A
2
IFM = 5 A
1
60.PF.. Series
TJ = 150 °C
IFM = 1 A
IFM = 1 A
0
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
Revision: 18-Aug-11
Document Number: 94104
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPF0.PbF, VS-60CPF0.PbF Series
www.vishay.com
Vishay Semiconductors
25
20
15
10
5
25
60.PF.. Series
TJ = 150 °C
20
60.PF.. Series
TJ = 25 °C
IFM = 60 A
IFM = 60 A
IFM = 30 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
IFM = 30 A
15
10
5
IFM = 10 A
IFM = 5 A
IFM = 1 A
0
0
0
40
80
120
160
200
10 20 30 40 50 60 70 80 90 100
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
1
Steady state value
(DC operation)
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
60.PF.. Series
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Revision: 18-Aug-11
Document Number: 94104
5
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPF0.PbF, VS-60CPF0.PbF Series
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- 60
E
P
F
06 PbF
1
2
3
4
5
6
7
1
2
3
-
-
-
Vishay Semiconductors product
Current rating (60 = 60 A)
Circuit configuration:
E = Single diode, 2 pins
C = Single diode, 3 pins
Package:
4
5
-
-
P = TO-247AC/AC modified
Type of silicon:
F = Fast recovery
02 = 200 V
04 = 400 V
06 = 600 V
6
7
-
-
Voltage code x 100 = VRRM
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
TO-247AC modified
TO-247AC
www.vishay.com/doc?95253
www.vishay.com/doc?95223
www.vishay.com/doc?95255
www.vishay.com/doc?95226
www.vishay.com/doc?95275
Dimensions
TO-247AC modified
TO-247AC
Part marking information
SPICE model
Revision: 18-Aug-11
Document Number: 94104
6
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
Ø P
(Datum B)
FP1
B
A2
A
N
S
M
M
Ø K D B
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
L
4
D
1
2
3
Thermal pad
(5) L1
C
(4)
E1
A
See view B
M
M
0.01 D B
2 x b2
3 x b
View A - A
C
2 x e
A1
b4
M
M
0.10 C A
Lead assignments
(b1, b3, b5)
Planting
Base metal
Diodes
D D E
E
1. - Anode/open
2. - Cathode
3. - Anode
(c)
c1
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
20.70
-
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.094
0.135
0.133
0.034
0.030
0.815
-
MIN.
0.51
MAX.
1.30
15.87
-
MIN.
MAX.
0.051
0.625
-
A
A1
A2
b
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
D2
E
0.020
0.602
0.540
15.29
13.72
3
E1
e
5.46 BSC
2.54
0.215 BSC
0.010
0.559
b1
b2
b3
b4
b5
c
FK
L
14.20
3.71
16.10
4.29
0.634
0.169
L1
N
0.146
7.62 BSC
0.3
P
P1
Q
3.56
3.66
6.98
5.69
5.49
0.14
-
0.144
0.275
0.224
0.216
-
c1
D
5.31
4.52
0.209
1.78
3
4
R
D1
S
5.51 BSC
0.217 BSC
Notes
(1)
(2)
(3)
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
(5)
(6)
(7)
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
Document Number: 95223
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
ΦP
(Datum B)
B
A2
A
N
S
M
M
Ø K D B
ΦP1
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
L
4
D
1
2
3
Thermal pad
(5) L1
C
(4)
E1
A
See view B
2 x b2
3 x b
View A - A
C
2 x e
A1
b4
M
M
0.10 C A
Lead assignments
(b1, b3, b5)
Planting
Base metal
Diodes
D D E
E
1. - Anode/open
2. - Cathode
3. - Anode
(c)
c1
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
20.70
-
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.094
0.135
0.133
0.034
0.030
0.815
-
MIN.
0.51
MAX.
1.30
15.87
-
MIN.
0.020
0.602
0.540
MAX.
0.051
0.625
-
A
A1
A2
b
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
D2
E
15.29
13.72
3
E1
e
5.46 BSC
2.54
0.215 BSC
0.010
0.634
b1
b2
b3
b4
b5
c
K
L
14.20
3.71
16.10
4.29
0.559
0.146
L1
N
0.169
7.62 BSC
0.3
P
P1
Q
3.56
3.66
6.98
5.69
5.49
0.14
-
0.144
0.275
0.224
0.216
-
c1
D
5.31
4.52
0.209
1.78
3
4
R
D1
S
5.51 BSC
0.217 BSC
Notes
(1)
(2)
(3)
Dimensioning and tolerance per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
(5)
(6)
(7)
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 21-Jun-11
Document Number: 95253
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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