VS-60EPF04-M3 [VISHAY]
DIODE RECTIFIER DIODE, Rectifier Diode;
| 型号： | VS-60EPF04-M3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE RECTIFIER DIODE, Rectifier Diode 软恢复二极管 快速软恢复二极管 局域网 |
| 文件： | 总9页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-60.PF0.PbF Series, VS-60.PF0.-M3 Series
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 60 A
FEATURES
• Glass passivated pellet chip junction
• 150 °C max. operating junction temperature
• Low forward voltage drop and short reverse
recovery time
2
3
3
2
• Designed and qualified according to
JEDEC®-JESD 47
1
1
TO-247AC
TO-247AC modified
Available
• Material categorization:
for definitions of compliance please see
Base cathode
2
Base cathode
2
www.vishay.com/doc?99912
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
1
3
1
3
Cathode
Anode
Anode
Anode
VS-60EPF...
VS-60APF0...
DESCRIPTION
PRODUCT SUMMARY
The VS-60EPF0... and VS-60APF0... soft recovery rectifier
series has been optimized for combined short reverse
recovery time and low forward voltage drop.
Package
TO-247AC modified (2 pins), TO-247AC
IF(AV)
60 A
200 V, 400 V, 600 V
1.3 V
VR
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
VF at IF
IFSM
830 A
trr
70 ns
TJ max.
Diode variation
Snap factor
150 °C
Single die
0.5
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
VRRM
IF(AV)
IFSM
trr
CHARACTERISTICS
VALUES
200 to 600
60
UNITS
V
Sinusoidal waveform
A
830
1 A, 100 A/μs
70
ns
V
VF
30 A, TJ = 25 °C
1.1
TJ
-40 to +150
°C
VOLTAGE RATINGS
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
IRRM
AT 150 °C
mA
PART NUMBER
PEAK REVERSE VOLTAGE
V
VS-60EPF02PbF, VS-60APF02PbF,
200
400
600
300
500
700
VS-60EPF02-M3, VS-60APF02-M3
VS-60EPF04PbF, VS-60APF04PbF,
VS-60EPF04-M3, VS-60APF04-M3
10
VS-60EPF06PbF, VS-60APF06PbF,
VS-60EPF06-M3, VS-60APF06-M3
Revision: 11-Feb-16
Document Number: 93710
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60.PF0.PbF Series, VS-60.PF0.-M3 Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
60
UNITS
Maximum average forward current
IF(AV)
TC = 106 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
700
A
Maximum peak one cycle
non-repetitive surge current
IFSM
830
2450
3460
34 600
Maximum I2t for fusing
I2t
A2s
Maximum I2t for fusing
I2t
A2s
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
1.3
UNITS
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
VFM
rt
60 A, TJ = 25 °C
V
m
V
5.0
TJ = 150 °C
VF(TO)
0.88
0.1
TJ = 25 °C
Maximum reverse leakage current
IRM
VR = Rated VRRM
mA
TJ = 150 °C
10
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL TEST CONDITIONS
VALUES
180
UNITS
ns
IFM
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
trr
IF at 60 Apk
25 A/μs
25 °C
trr
ta tb
Irr
Qrr
S
3.4
A
t
dir
dt
0.5
μC
Qrr
Typical
0.5
IRM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
-40 to +150
°C
Maximum thermal resistance,
RthJC
RthJA
RthCS
DC operation
0.4
40
junction to case
Maximum thermal resistance,
junction to ambient
°C/W
Typical thermal resistance,
case to heatsink
Mounting surface, smooth and greased
0.2
6
g
Approximate weight
0.21
oz.
minimum
maximum
6 (5)
kgf · cm
(Ibf · in)
Mounting torque
Marking device
12 (10)
60EPF02
60EPF04
60EPF06
60APF02
60APF04
60APF06
Case style TO-247AC modified
Case style TO-247AC
Revision: 11-Feb-16
Document Number: 93710
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60.PF0.PbF Series, VS-60.PF0.-M3 Series
www.vishay.com
Vishay Semiconductors
150
140
130
120
110
100
90
140
60.PF.. Series
RthJC (DC) = 0.4 K/W
180°
120
100
80
60
40
20
0
120°
90°
60°
30°
Ø
DC
Conduction angle
RMS limit
Ø
Conduction period
120°
60°
60.PF.. Series
TJ = 150 °C
90°
180°
30°
30
0
10
20
40
50
60
70
0
20
40
60
80
100
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
150
140
130
120
110
100
90
800
700
600
500
400
300
200
At any rated load condition and with
rated VRRM applied following surge.
60.PF.. Series
RthJC (DC) = 0.4 K/W
Initial TJ = 175 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Ø
Conduction period
60°
90°
30°
120°
60.PF.. Series
DC
80
180°
0
20
40
60
100
1
10
100
Average Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
90
80
70
60
50
40
30
20
10
0
900
180°
120°
90°
60°
30°
Maximum non-repetitive surge current
versus pulse train duration.
800
700
600
500
400
300
200
100
Initial TJ = 195 °C
No voltage reapplied
Rated VRRM reapplied
RMS limit
Ø
Conduction angle
60.PF.. Series
TJ = 150 °C
60.PF.. Series
0
10
20
30
40
50
60
70
0.01
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Feb-16
Document Number: 93710
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60.PF0.PbF Series, VS-60.PF0.-M3 Series
www.vishay.com
Vishay Semiconductors
1000
100
10
TJ = 25 °C
TJ = 150 °C
60.PF.. Series
1
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
0.20
0.15
0.10
0.05
4
IFM = 60 A
IFM = 30 A
60.PF.. Series
TJ = 25 °C
IFM = 60 A
IFM = 30 A
3
2
1
0
IFM = 10 A
IFM = 5 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
160
60.PF.. Series
TJ = 25 °C
IFM = 1 A
160
0
40
80
120
200
0
40
80
120
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
0.45
5
60.PF.. Series
TJ = 150 °C
IFM = 60 A
0.40
0.35
0.30
0.25
0.20
0.15
0.10
4
IFM = 30 A
IFM = 60 A
IFM = 30 A
3
IFM = 10 A
IFM = 10 A
IFM = 5 A
2
IFM = 5 A
1
60.PF.. Series
TJ = 150 °C
IFM = 1 A
IFM = 1 A
0
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
Revision: 11-Feb-16
Document Number: 93710
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60.PF0.PbF Series, VS-60.PF0.-M3 Series
www.vishay.com
Vishay Semiconductors
25
20
15
10
5
25
60.PF.. Series
TJ = 150 °C
60.PF.. Series
TJ = 25 °C
IFM = 60 A
20
15
10
5
IFM = 60 A
IFM = 30 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
IFM = 30 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
0
0
0
40
80
120
160
200
10 20 30 40 50 60 70 80 90 100
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
1
Steady state value
(DC operation)
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
60.PF.. Series
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Revision: 11-Feb-16
Document Number: 93710
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60.PF0.PbF Series, VS-60.PF0.-M3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
60
E
P
F
06 PbF
1
2
3
4
5
6
7
1
-
-
-
Vishay Semiconductors product
Current rating (60 = 60 A)
Circuit configuration:
E = single diode
2
3
A = single diode, 3 pins
Package:
4
5
-
-
P = TO-247AC/TO-247AC modified
Type of silicon:
F = fast recovery
02 = 200 V
04 = 400 V
06 = 600 V
6
7
-
-
Voltage code x 100 = VRRM
Environmental digit:
PbF = lead (Pb)-free and RoHS-compliant
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-60EPF02PbF
VS-60EPF02-M3
VS-60APF02PbF
VS-60APF02-M3
VS-60EPF04PbF
VS-60EPF04-M3
VS-60APF04PbF
VS-60APF04-M3
VS-60EPF06PbF
VS-60EPF06-M3
VS-60APF06PbF
VS-60APF06-M3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
25
25
25
25
25
25
25
25
25
25
25
25
500
500
500
500
500
500
500
500
500
500
500
500
LINKS TO RELATED DOCUMENTS
TO-247AC modified
www.vishay.com/doc?95541
Dimensions
TO-247AC
www.vishay.com/doc?95542
www.vishay.com/doc?95255
www.vishay.com/doc?95442
www.vishay.com/doc?95226
www.vishay.com/doc?95007
www.vishay.com/doc?95275
TO-247AC modified PbF
TO-247AC modified -M3
TO-247AC PbF
Part marking information
SPICE model
TO-247AC -M3
Revision: 11-Feb-16
Document Number: 93710
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
TO-247AC modified - 50 mils L/F
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
Ø P
(Datum B)
Ø P1
B
A2
A
S
M
M
Ø K D B
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
4
D
1
2
3
Thermal pad
(5) L1
C
L
(4)
E1
A
See view B
2 x b2
3 x b
View A - A
C
2 x e
A1
b4
M
M
0.10 C A
(b1, b3, b5)
Plating
Base metal
D D E
E
(c)
c1
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.17
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
1.37
1.40
1.35
2.39
2.34
3.43
3.38
0.89
0.84
20.70
-
MAX.
0.209
0.102
0.054
0.055
0.053
0.094
0.092
0.135
0.133
0.035
0.033
0.815
-
MIN.
0.51
MAX.
1.35
15.87
-
MIN.
0.020
0.602
0.53
MAX.
0.053
0.625
-
A
A1
A2
b
0.183
0.087
0.046
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
D2
E
15.29
13.46
3
E1
e
5.46 BSC
0.254
16.10
0.215 BSC
0.010
0.634
b1
b2
b3
b4
b5
c
Ø K
L
14.20
3.71
3.56
-
0.559
0.146
0.14
-
L1
Ø P
Ø P1
Q
4.29
3.66
7.39
5.69
5.49
0.169
0.144
0.291
0.224
0.216
5.31
4.52
0.209
0.178
c1
D
R
3
4
S
5.51 BSC
0.217 BSC
D1
Notes
(1)
(2)
(3)
Dimensioning and tolerance per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
(5)
(6)
(7)
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q
Revision: 20-Apr-17
Document Number: 95541
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
TO-247AC - 50 mils L/F
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
Φ P
(Datum B)
B
A2
A
S
M
M
Ø K D B
Φ P1
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
4
D
1
2
3
Thermal pad
(5) L1
C
L
(4)
E1
A
See view B
M
M
0.01 D B
2 x b2
3 x b
View A - A
C
2 x e
A1
b4
M
M
0.10 C A
(b1, b3, b5)
Plating
Base metal
D D E
E
(c)
c1
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.17
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
1.37
1.40
1.35
2.39
2.34
3.43
3.38
0.89
0.84
20.70
-
MAX.
0.209
0.102
0.054
0.055
0.053
0.094
0.092
0.135
0.133
0.035
0.033
0.815
-
MIN.
0.51
MAX.
1.35
15.87
-
MIN.
0.020
0.602
0.53
MAX.
0.053
0.625
-
A
A1
A2
b
0.183
0.087
0.046
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
D2
E
15.29
13.46
3
E1
e
5.46 BSC
0.254
16.10
0.215 BSC
0.010
0.634
b1
b2
b3
b4
b5
c
Ø K
L
14.20
3.71
3.56
-
0.559
0.146
0.14
-
L1
Ø P
Ø P1
Q
4.29
3.66
7.39
5.69
5.49
0.169
0.144
0.291
0.224
0.216
5.31
4.52
0.209
0.178
c1
D
R
3
4
S
5.51 BSC
0.217 BSC
D1
Notes
(1)
(2)
(3)
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
(4)
(5)
(6)
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q
(7)
Revision: 20-Apr-17
Document Number: 95542
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
相关型号：
VS-60EPF04PBF
DIODE 60 A, 400 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, MODIFIED TO-247AC, 2 PIN, Rectifier Diode
VISHAY
VS-60EPS08PBF
DIODE 60 A, 800 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, MODIFIED TO-247AC, 2 PIN, Rectifier Diode
VISHAY
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