VS-60CPU03W-N3 [VISHAY]
Rectifier Diode, 1 Phase, 2 Element, 30A, 300V V(RRM), Silicon, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3;
| 型号： | VS-60CPU03W-N3 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 30A, 300V V(RRM), Silicon, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3 超快恢复二极管 快速恢复二极管 局域网 |
| 文件： | 总7页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-60CPU03W-N3
Vishay Semiconductors
www.vishay.com
Ultrafast Rectifier, FRED Pt®, 2 x 30 A
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
Base
common
cathode
2
• 175 °C operating junction temperature
• Designed and qualified according to
JEDEC®-JESD 47
• Material categorization:
for definitions of compliance please see
1
3
www.vishay.com/doc?99912
Anode
1
Anode
2
2
TO-247AC
Common
cathode
DESCRIPTION / APPLICATIONS
This series is the state of the art ultrafast recovery rectifiers
designed with optimized performance of forward voltage
drop and ultrafast recovery time.
PRODUCT SUMMARY
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
Package
TO-247AC
2 x 30 A
300 V
IF(AV)
VR
These devices are intended for use in the output rectification
stage of SMPS, welding, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters, and chopper
motor drives.
VF at IF
0.9 V
t
rr (typical)
TJ max.
50 ns
175 °C
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Diode variation
Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Peak repetitive reverse voltage
VRRM
300
30
V
per leg
per device
Average rectified forward current
IF(AV)
TC = 133 °C
TJ = 25 °C
60
A
Non-repetitive peak surge current per leg
IFSM
300
Operating junction and storage temperature range
TJ, TStg
-40 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNITS
Breakdown voltage, blocking voltage
VBR, VR
IR = 100 μA
IF = 30 A
300
-
-
-
-
-
-
-
-
1.03
0.9
0.1
15
1.2
1.0
5
V
Forward voltage
VF
IR
IF = 30 A, TJ = 125 °C
VR = VR rated
Reverse leakage current
μA
TJ = 125 °C, VR = VR rated
VR = 300 V
100
-
Junction capacitance
Series inductance
CT
LS
40
pF
nH
Measured lead to lead 5 mm from package body
3.5
-
Revision: 10-Jul-15
Document Number: 95800
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60CPU03W-N3
Vishay Semiconductors
www.vishay.com
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
38
-
-
-
-
-
-
-
Reverse recovery time
trr
50
ns
TJ = 125 °C
77
IF = 30 A
dIF/dt = -200 A/μs
TJ = 25 °C
5.3
Peak recovery current
IRRM
A
TJ = 125 °C
11.3
130
440
VR = 200 V
TJ = 25 °C
Reverse recovery charge
Qrr
nC
TJ = 125 °C
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction and
storage temperature range
TJ, TStg
-40
-
175
°C
Thermal resistance,
junction to case per leg
RthJC
RthJA
RthCS
-
-
-
0.9
-
1.1
40
-
Thermal resistance,
junction to ambient
Typical socket mount
Mounting surface, flat, smooth and greased
°C/W
Typical thermal resistance,
case to heatsink
0.4
-
-
6.0
-
-
g
Weight
0.22
oz.
6.0
(12)
12
(10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
-
Case style TO-247AC
60CPU03W
Revision: 10-Jul-15
Document Number: 95800
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60CPU03W-N3
Vishay Semiconductors
www.vishay.com
1000
100
10
1000
100
10
175 °C
150 °C
TJ = 175 °C
125 °C
1
25 °C
0.1
TJ = 125 °C
0.01
0.001
TJ = 25 °C
1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
50
100
150
200
250
300
VF - Forward Voltage Drop (V)
V
- Reverse Voltage (V)
R
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
1000
100
10
0
50
100
150
200
250
300
V
- Reverse Voltage (V)
R
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 10-Jul-15
Document Number: 95800
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60CPU03W-N3
Vishay Semiconductors
www.vishay.com
180
170
160
150
140
130
120
110
100
50
40
30
20
10
0
RMS limit
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
Square wave (D = 0.50)
rated VR applied
See note (1)
0
5
10 15 20 25 30 35 40 45
0
5
10 15 20 25 30 35 40 45
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Forward Power Loss Characteristics
100
1000
900
800
700
600
500
400
300
200
100
0
90
80
70
60
50
40
30
20
125 °C
125 °C
25 °C
25 °C
100
1000
100
1000
dIF/dt (A/μs)
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
dIF/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
Revision: 10-Jul-15
Document Number: 95800
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60CPU03W-N3
Vishay Semiconductors
www.vishay.com
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
60
C
P
U
03
W
-N3
1
2
3
4
5
6
7
8
1
-
-
-
-
-
-
-
-
Vishay Semiconductors product
2
3
4
5
6
7
8
Current rating (60 = 60 A)
Circuit configuration: C = common cathode
P = TO-247AC
U = ultrafast rectifier
Voltage code (03 = 300 V)
Special
Environmental digit:
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER PACKAGE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tube
VS-60CPU03W-N3
25
500
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95542
www.vishay.com/doc?95007
Part marking information
Revision: 10-Jul-15
Document Number: 95800
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
TO-247AC - 50 mils L/F
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
Φ P
(Datum B)
B
A2
A
S
M
M
Ø K D B
Φ P1
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
4
D
1
2
3
Thermal pad
(5) L1
C
L
(4)
E1
A
See view B
M
M
0.01 D B
2 x b2
3 x b
View A - A
C
2 x e
A1
b4
M
M
0.10 C A
(b1, b3, b5)
Plating
Base metal
D D E
E
(c)
c1
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.17
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
1.37
1.40
1.35
2.39
2.34
3.43
3.38
0.89
0.84
20.70
-
MAX.
0.209
0.102
0.054
0.055
0.053
0.094
0.092
0.135
0.133
0.035
0.033
0.815
-
MIN.
0.51
MAX.
1.35
15.87
-
MIN.
0.020
0.602
0.53
MAX.
0.053
0.625
-
A
A1
A2
b
0.183
0.087
0.046
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
D2
E
15.29
13.46
3
E1
e
5.46 BSC
0.254
16.10
0.215 BSC
0.010
0.634
b1
b2
b3
b4
b5
c
Ø K
L
14.20
3.71
3.56
-
0.559
0.146
0.14
-
L1
Ø P
Ø P1
Q
4.29
3.66
7.39
5.69
5.49
0.169
0.144
0.291
0.224
0.216
5.31
4.52
0.209
0.178
c1
D
R
3
4
S
5.51 BSC
0.217 BSC
D1
Notes
(1)
(2)
(3)
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
(4)
(5)
(6)
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q
(7)
Revision: 20-Apr-17
Document Number: 95542
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 08-Feb-17
Document Number: 91000
1
相关型号：
VS-60CPU04-F3
DIODE 30 A, 400 V, SILICON, RECTIFIER DIODE, TO-247AC, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
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