VS-60CPU04-F3 [VISHAY]
DIODE 30 A, 400 V, SILICON, RECTIFIER DIODE, TO-247AC, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode;型号: | VS-60CPU04-F3 |
厂家: | VISHAY |
描述: | DIODE 30 A, 400 V, SILICON, RECTIFIER DIODE, TO-247AC, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode 超快恢复二极管 快速恢复二极管 局域网 |
文件: | 总7页 (文件大小:153K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VS-60CPU04-F3, VS-60CPU04-N3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 2 x 30 A FRED Pt®
FEATURES
Base
common
cathode
• Low forward voltage drop
• 175 °C operating junction temperature
• Ultrafast recovery time
• Low leakage current
2
• Designed and qualified according to
JEDEC®-JESD 47
• Material categorization:
1
3
Available
for definitions of compliance please see
www.vishay.com/doc?99912
Anode
1
Anode
2
2
Common
cathode
TO-247AC
DESCRIPTION / APPLICATIONS
VS-60CPU04... series are the state of the art ultrafast
recovery rectifiers designed with optimized performance of
forward voltage drop and ultrafast recovery time.
PRODUCT SUMMARY
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
Package
TO-247AC
2 x 30 A
400 V
IF(AV)
These devices are intended for use in the output rectification
stage of SMPS, welding, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters, and chopper
motor drives.
VR
VF at IF
0.92 V
t
rr typ.
37 ns
TJ max.
175 °C
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Diode variation
Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Peak repetitive reverse voltage
VRRM
400
V
per leg
Average rectified forward current
per device
30
60
IF(AV)
Rated VR, TC = 134 °C
A
Non-repetitive peak surge current per leg
Peak repetitive forward current per leg
Operating junction and storage temperatures
IFSM
IFM
TJ = 25 °C
300
Rated VR, square wave, 20 kHz, TC = 134 °C
60
TJ, TStg
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
IF = 30 A
400
-
-
-
-
-
-
-
-
-
-
1.10
0.92
1.25
1.10
-
1.30
1.10
1.6
1.4
10
V
IF = 30 A, TJ = 150 °C
IF = 60 A
Forward voltage
VF
IF = 60 A, TJ = 150 °C
VR = VR rated
Reverse leakage current
IR
μA
TJ = 150 °C, VR = VR rated
VR = 400 V
-
100
-
Junction capacitance
Series inductance
CT
LS
40
pF
nH
Measured lead to lead 5 mm from package body
12
-
Revision: 18-Oct-16
Document Number: 93189
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60CPU04-F3, VS-60CPU04-N3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
-
37
40
-
46
Reverse recovery time
trr
ns
65
-
TJ = 125 °C
119
6.4
-
IF = 30 A
dIF/dt = 200 A/μs
TJ = 25 °C
-
Peak recovery current
IRRM
A
TJ = 125 °C
14.7
206
874
-
VR = 200 V
TJ = 25 °C
-
Reverse recovery charge
Qrr
nC
TJ = 125 °C
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Maximum junction and
storage temperature range
TJ, TStg
-65
-
+175
°C
Thermal resistance,
junction to case per leg
RthJC
RthJA
RthCS
-
-
-
0.6
-
1.0
40
-
Thermal resistance,
junction to ambient per leg
Typical socket mount
°C/W
Thermal resistance,
case to heatsink
Mounting surface, flat, smooth, and greased
0.5
-
-
6
-
-
g
Weight
0.21
oz.
6.0
(5.0)
12
(10)
kgf · cm
(lbf · in)
Mounting torque
Marking device
-
Case style TO-247AC
60CPU04
1000
1000
TJ = 175 °C
100
10
TJ = 150 °C
TJ = 125 °C
100
TJ = 175 °C
TJ = 100 °C
TJ = 75 °C
1
TJ = 125 °C
10
0.1
0.01
TJ = 50 °C
TJ = 25 °C
TJ = 25 °C
1
0.001
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
50
100
150
200
250
300
350
400
VF - Forward Voltage Drop (V)
93189_01
93189_02
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 18-Oct-16
Document Number: 93189
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60CPU04-F3, VS-60CPU04-N3
www.vishay.com
Vishay Semiconductors
1000
100
10
0
50
100
150
200
250
300
93189_03
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal resistance)
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
93189_04
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
180
60
50
40
30
20
10
0
160
140
120
100
DC
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
Square wave (D = 0.50)
Rated VR applied
See note (1)
0
5
10 15 20 25 30 35 40 45
0
5
10 15 20 25 30 35 40 45
IF(AV) - Average Forward Current (A)
93189_05
93189_06
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Revision: 18-Oct-16
Document Number: 93189
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60CPU04-F3, VS-60CPU04-N3
www.vishay.com
Vishay Semiconductors
1000
100
10
10 000
IF = 30 A, TJ = 125 °C
IF = 30 A, TJ = 125 °C
1000
IF = 30 A, TJ = 25 °C
IF = 30 A, TJ = 25 °C
100
100
100
1000
1000
93189_07
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
93189_08
dIF/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
D
dIF/dt
adjust
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
dI(rec)M/dt
0.75 IRRM
dIF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) dIF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 18-Oct-16
Document Number: 93189
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60CPU04-F3, VS-60CPU04-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
60
C
P
U
04 -F3
1
2
3
4
5
6
7
1
-
-
-
-
-
-
-
Vishay Semiconductors product
2
3
4
5
6
7
Current rating (60 = 60 A)
Circuit configuration: C = Common cathode
P = TO-247AC
U = Ultrafast rectifier
Voltage rating (04 = 400 V)
Environmental digit:
-F3 = RoHS compliant and totally lead (Pb)-free
-N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
25
25
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-60CPU04-F3
VS-60CPU04-N3
500
500
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95542
Part marking information
SPICE model
www.vishay.com/doc?95007
www.vishay.com/doc?95398
Revision: 18-Oct-16
Document Number: 93189
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
TO-247AC - 50 mils L/F
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
Φ P
(Datum B)
B
A2
A
S
M
M
Ø K D B
Φ P1
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
4
D
1
2
3
Thermal pad
(5) L1
C
L
(4)
E1
A
See view B
M
M
0.01 D B
2 x b2
3 x b
View A - A
C
2 x e
A1
b4
M
M
0.10 C A
(b1, b3, b5)
Plating
Base metal
D D E
E
(c)
c1
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.17
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
19.71
13.08
MAX.
5.31
2.59
1.37
1.40
1.35
2.39
2.34
3.43
3.38
0.89
0.84
20.70
-
MAX.
0.209
0.102
0.054
0.055
0.053
0.094
0.092
0.135
0.133
0.035
0.033
0.815
-
MIN.
0.51
MAX.
1.35
15.87
-
MIN.
0.020
0.602
0.53
MAX.
0.053
0.625
-
A
A1
A2
b
0.183
0.087
0.046
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
D2
E
15.29
13.46
3
E1
e
5.46 BSC
0.254
16.10
0.215 BSC
0.010
0.634
b1
b2
b3
b4
b5
c
Ø K
L
14.20
3.71
3.56
-
0.559
0.146
0.14
-
L1
Ø P
Ø P1
Q
4.29
3.66
7.39
5.69
5.49
0.169
0.144
0.291
0.224
0.216
5.31
4.52
0.209
0.178
c1
D
R
3
4
S
5.51 BSC
0.217 BSC
D1
Notes
(1)
(2)
(3)
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
(4)
(5)
(6)
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q
(7)
Revision: 20-Apr-17
Document Number: 95542
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 08-Feb-17
Document Number: 91000
1
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