VS-40CTQ045STRR-M3 [VISHAY]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/2;型号: | VS-40CTQ045STRR-M3 |
厂家: | VISHAY |
描述: | Rectifier Diode, Schottky, 1 Phase, 2 Element, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/2 二极管 |
文件: | 总8页 (文件大小:179K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VS-40CTQ045S-M3, VS-40CTQ045-1-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 20 A
FEATURES
D2PAK
TO-262
• 150 °C TJ operation
• Center tap configuration
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Base
common
cathode
Base
common
cathode
2
2
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified according to JEDEC®-JESD 47
2
2
1
1
3
3
Common
cathode
Common
cathode
Anode
Anode
Anode
Anode
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
VS-40CTQ045S-M3
VS-40CTQ045-1-M3
DESCRIPTION
This center tap Schottky rectifier has been optimized for
very low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
PRODUCT SUMMARY
IF(AV)
2 x 20 A
45 V
VR
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
VF at IF
0.48 V
I
RM max.
115 mA at 125°C
150 °C
TJ max.
EAS
20 mJ
Package
TO-263AB (D2PAK), TO-262AA
Common cathode
Diode variation
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
40
UNITS
Rectangular waveform
A
V
45
tp = 5 μs sine
1240
A
VF
20 Apk, TJ = 125 °C (per leg)
Range
0.48
V
TJ
-55 to 150
°C
VOLTAGE RATINGS
PARAMETER
VS-40CTQ045S-M3
VS-40CTQ045-1-M3
SYMBOL
UNITS
Maximum DC reverse voltage
VR
45
V
Maximum working peak reverse voltage
VRWM
Revision: 26-Feb-14
Document Number: 94935
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40CTQ045S-M3, VS-40CTQ045-1-M3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average
forward current
See fig. 5
per leg
20
IF(AV)
50 % duty cycle at TC = 116 °C, rectangular waveform
per device
40
A
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Following any rated load
condition and with rated
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
1240
IFSM
350
20
VRRM applied
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
EAS
IAR
TJ = 25 °C, IAS = 3 A, L = 4.40 mH
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
3
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
20 A
0.53
0.68
0.48
0.67
3
TJ = 25 °C
40 A
Maximum forward voltage drop per leg
See fig. 1
(1)
VFM
V
20 A
TJ = 125 °C
40 A
TJ = 25 °C
Maximum reverse leakage current per leg
See fig. 2
(1)
IRM
VR = Rated VR
mA
TJ = 125 °C
115
Threshold voltage
VF(TO)
rt
0.27
8.72
2800
8.0
V
TJ = TJ maximum
Forward slope resistance
m
pF
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
LS
nH
dV/dt
10 000
V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 55 to 150
°C
Maximum thermal resistance,
junction to case per leg
2.0
1.0
RthJC
DC operation
Maximum thermal resistance,
junction to case per package
°C/W
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
0.50
2
g
Approximate weight
Mounting torque
Marking device
0.07
oz.
minimum
maximum
6 (5)
kgf cm
(lbf in)
12 (10)
Case style D2PAK
Case style TO-262
40CTQ045S
40CTQ045-1
Revision: 26-Feb-14
Document Number: 94935
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40CTQ045S-M3, VS-40CTQ045-1-M3
www.vishay.com
Vishay Semiconductors
1000
100
10
1000
TJ = 150 °C
100
TJ = 125 °C
10
TJ = 100 °C
TJ = 75 °C
1
TJ = 50 °C
TJ = 25 °C
0.1
0.01
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0.001
1
40
0
5
10 15 20 25 30 35
45
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VR - Reverse Voltage (V)
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
10 000
1000
100
TJ = 25 °C
0
10
20
30
40
50
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
PDM
t1
D = 0.75
D = 0.50
D = 0.33
t2
0.1
Single pulse
D = 0.25
D = 0.20
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
(thermal resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
100
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 26-Feb-14
Document Number: 94935
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40CTQ045S-M3, VS-40CTQ045-1-M3
www.vishay.com
Vishay Semiconductors
150
145
140
135
130
125
120
115
110
105
100
18
D = 0.20
16
14
12
10
8
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS limit
Square wave (D = 0.50)
80 % rated VR applied
6
DC
4
2
See note (1)
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
10 000
At any rated load condition
and with rated VRRM applied
following surge
1000
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
IRFP460
D.U.T.
Freewheel
diode
Rg = 25 Ω
Vd = 25 V
+
Current
monitor
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 10 V
Revision: 26-Feb-14
Document Number: 94935
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40CTQ045S-M3, VS-40CTQ045-1-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
40
C
T
Q
045
S
TRL -M3
1
2
3
4
5
6
7
8
9
1
-
-
-
-
-
-
-
Vishay Semiconductors product
2
3
4
5
6
7
Current rating (40 A)
Circuit configuration: C = Common cathode
T = TO-220
Schottky “Q” series
Voltage rating (045 = 45 V)
S = D2PAK
-1 = TO-262
8
9
-
-
None = Tube
TRL = Tape and reel (left oriented - for D2PAK only)
TRR = Tape and reel (right oriented - for D2PAK only)
-M3 = Halogen-free, RoHS-compliant and termination lead (Pb)-free
ORDERING INFORMATION
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
VS-40CTQ045S-M3
50
800
800
50
1000
800
VS-40CTQ045STRR-M3
VS-40CTQ045STRL-M3
VS-40CTQ045-1-M3
800
13" diameter reel
1000
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
TO-263AB (D2PAK)
www.vishay.com/doc?95046
Dimensions
TO-262AA
www.vishay.com/doc?95419
www.vishay.com/doc?95444
www.vishay.com/doc?95443
www.vishay.com/doc?95032
Part marking information
Part marking information
Packaging information
TO-263AB (D2PAK)
TO-262AA
Revision: 26-Feb-14
Document Number: 94935
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC outline D2PAK (SMD-220)
B
A
Pad layout
A
(2)(3)
E
A
(E)
c2
11.00
MIN.
(0.43)
(3)
D
L1
4
2
9.65
MIN.
(0.38)
(D1) (3)
Detail A
17.90 (0.70)
15.00 (0.625)
H
(2)
1
3
3.81
MIN.
L2
(0.15)
B
B
2.32
MIN.
(0.08)
A
B
2.64 (0.103)
2.41 (0.096)
(3)
E1
2 x b2
2 x b
C
c
View A - A
0.004 M
Base
Metal
0.010 M
M
B
A
Plating
(4)
b1, b3
2 x
e
H
Gauge
plane
(4)
c1
(c)
B
0° to 8°
Seating
plane
Lead assignments
L3
A1
Lead tip
(b, b2)
L
Diodes
L4
Section B - B and C - C
Scale: None
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Detail “A”
Rotated 90 °CW
Scale: 8:1
MILLIMETERS
SYMBOL
INCHES
MILLIMETERS
INCHES
NOTES
SYMBOL
NOTES
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
MAX.
4.83
0.254
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
MIN.
6.86
9.65
7.90
MAX.
8.00
MIN.
MAX.
0.315
0.420
0.346
A
A1
b
D1
E
0.270
0.380
0.311
3
2, 3
3
10.67
8.80
E1
e
b1
b2
b3
c
4
4
4
2
2.54 BSC
0.100 BSC
H
14.61
1.78
-
15.88
2.79
1.65
1.78
0.575
0.070
-
0.625
0.110
0.066
0.070
L
L1
L2
L3
L4
3
c1
c2
D
1.27
0.050
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Outline conforms to JEDEC outline TO-263AB
Document Number: 95046
Revision: 31-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-262
DIMENSIONS in millimeters and inches
Modified JEDEC outline TO-262
(2) (3)
E
A
(Datum A)
B
A
c2
E
A
(3)
L1
D
Seating
plane
D1(3)
1
2
3
C
C
L2
B
B
L (2)
A
c
(3)
E1
3 x b2
3 x b
A1
Section A - A
2 x e
Base
metal
(4)
b1, b3
Plating
c
M
M
B
0.010
A
Lead assignments
c1
(4)
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
(b, b2)
Lead tip
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
SYMBOL
NOTES
MIN.
4.06
2.03
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
6.86
9.65
7.90
MAX.
4.83
3.02
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
8.00
10.67
8.80
MIN.
0.160
0.080
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
0.270
0.380
0.311
MAX.
0.190
0.119
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
0.315
0.420
0.346
A
A1
b
b1
b2
b3
c
4
4
4
c1
c2
D
2
3
D1
E
2, 3
3
E1
e
2.54 BSC
0.100 BSC
L
13.46
-
14.10
1.65
3.71
0.530
-
0.555
0.065
0.146
L1
L2
3
3.56
0.140
Notes
(1)
(4)
(5)
(6)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
Dimension b1 and c1 apply to base metal only
Controlling dimension: inches
Outline conform to JEDEC TO-262 except A1 (maximum), b
(minimum) and D1 (minimum) where dimensions derived the
actual package outline
(2)
(3)
Thermal pad contour optional within dimension E, L1, D1 and E1
Document Number: 95419
Revision: 04-Oct-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
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Disclaimer
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
Document Number: 91000
1
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