VS-40CTQ150SPBF [VISHAY]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 150V V(RRM), Silicon, D2PAK-3;
| 型号： | VS-40CTQ150SPBF |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 150V V(RRM), Silicon, D2PAK-3 高功率电源 二极管 |
| 文件： | 总8页 (文件大小：255K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-40CTQ150SPbF, VS-40CTQ150-1PbF
Vishay Semiconductors
Schottky Rectifier, 2 x 20 A
FEATURES
• AEC-Q101 qualified
• Very low forward voltage drop
• Halogen-free according to IEC 61249-2-21
definition
D2PAK
TO-262
• 175 °C TJ operation
• Center tap TO-220 package
• High frequency operation
Base
common
cathode
Base
common
cathode
2
2
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
2
2
1
1
3
3
Common
cathode
Common
cathode
Anode
Anode
Anode
Anode
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
VS-40CTQ150SPbF
VS-40CTQ150-1PbF
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
DESCRIPTION
Package
TO-262AA, TO-263AB (D2PAK)
The VS-40CTQ... center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
IF(AV)
2 x 20 A
150 V
VR
VF at IF
IRM
0.71 V
15 mA at 125 °C
175 °C
TJ max.
Diode variation
Common cathode
EAS
1 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
40
UNITS
Rectangular waveform
A
V
150
tp = 5 μs sine
1500
A
VF
20 Apk, TJ = 125 °C (per leg)
0.71
V
TJ
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
VS-40CTQ150SPbF
VS-40CTQ150-1PbF
SYMBOL
UNITS
Maximum DC reverse voltage
VR
150
V
Maximum working peak reverse voltage
VRWM
Document Number: 94215
Revision: 04-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VS-40CTQ150SPbF, VS-40CTQ150-1PbF
Schottky Rectifier, 2 x 20 A
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average
forward current
See fig. 5
per leg
20
IF(AV)
50 % duty cycle at TC = 140 °C, rectangular waveform
per device
40
A
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Following any rated load
condition and with rated
VRRM applied
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
1500
IFSM
250
1.0
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
EAS
IAR
TJ = 25 °C, IAS = 1.5 A, L = 0.9 mH
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1.5
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
20 A
0.93
1.16
0.71
0.85
50
TJ = 25 °C
40 A
Maximum forward voltage drop per leg
See fig. 1
(1)
VFM
V
20 A
TJ = 125 °C
40 A
TJ = 25 °C
μA
mA
pF
Maximum reverse leakage current per leg
See fig. 2
(1)
IRM
VR = Rated VR
TJ = 125 °C
15
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
CT
LS
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
450
8.0
nH
dV/dt
10 000
V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 55 to 175
°C
Maximum thermal resistance,
junction to case per leg
DC operation
See fig. 4
1.5
0.75
0.5
RthJC
Maximum thermal resistance,
junction to case per package
DC operation
°C/W
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
2
g
Approximate weight
Mounting torque
Marking device
0.07
oz.
minimum
maximum
6 (5)
kgf cm
(lbf in)
Non-lubricated threads
12 (10)
Case style D2PAK
Case style TO-262
40CTQ150S
40CTQ150-1
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94215
Revision: 04-Jan-11
VS-40CTQ150SPbF, VS-40CTQ150-1PbF
Schottky Rectifier, 2 x 20 A
Vishay Semiconductors
100
10
1
1000
TJ = 175 °C
100
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
10
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
1
TJ = 75 °C
TJ = 50 °C
0.1
0.01
TJ = 25 °C
0.001
0
20
40
60
80 100 120 140 160
0
0.4
0.8
1.2
1.6
VR - Reverse Voltage (V)
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
TJ = 25 °C
100
10
0
40
80
160
120
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
t1
D = 0.75
t2
0.1
0.01
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 94215
Revision: 04-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VS-40CTQ150SPbF, VS-40CTQ150-1PbF
Schottky Rectifier, 2 x 20 A
Vishay Semiconductors
180
160
140
120
100
25
20
15
10
5
RMS limit
DC
DC
DC = 0.20
DC = 0.25
DC = 0.33
DC = 0.50
DC = 0.75
Square wave (D = 0.50)
80 % VR applied
See note (1)
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
10 000
At any rated load condition
and with rated VRRM applied
following surge
1000
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % VR applied
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For technical questions within your region, please contact one of the following:
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Document Number: 94215
Revision: 04-Jan-11
VS-40CTQ150SPbF, VS-40CTQ150-1PbF
Schottky Rectifier, 2 x 20 A
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
40
C
T
Q
150
S
TRL PbF
1
2
3
4
5
6
7
8
9
1
-
-
-
Vishay Semiconductors product
Current rating (40 A)
Circuit configuration:
C = Common cathode
T = TO-220
2
3
4
5
6
7
-
-
-
-
Schottky “Q” series
Voltage rating (150 = 150 V)
S = D2PAK
-1 = TO-262
8
9
-
-
None = Tube (50 pieces)
TRL = Tape and reel (left oriented - for D2PAK only)
TRR = Tape and reel (right oriented - for D2PAK only)
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95014
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?95008
www.vishay.com/doc?95032
www.vishay.com/doc?95434
Document Number: 94215
Revision: 04-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
Outline Dimensions
Vishay Semiconductors
D2PAK, TO-262
DIMENSIONS - D2PAK in millimeters and inches
Conforms to JEDEC outline D2PAK (SMD-220)
B
A
Pad layout
A
(2)(3)
E
A
(E)
c2
110ꢀꢀ
MIN0
(ꢀ0ꢁ3)
(3)
D
L1
ꢁ
2
9065
MIN0
(ꢀ038)
(D1) (3)
Detail A
1709ꢀ (ꢀ07ꢀ)
150ꢀꢀ (ꢀ0625)
H
(2)
1
3
3081
MIN0
L2
(ꢀ015)
B
B
2032
MIN0
(ꢀ0ꢀ8)
A
B
206ꢁ (ꢀ01ꢀ3)
20ꢁ1 (ꢀ0ꢀ96)
(3)
E1
2 x b2
2 x b
C
c
View A - A
ꢀ0ꢀꢀꢁ M
Base
Metal
ꢀ0ꢀ1ꢀ M
M
B
A
Plating
(ꢁ)
b1, b3
2 x
e
H
Gauge
plane
(ꢁ)
c1
(c)
B
ꢀ° to 8°
L3
Seating
plane
Lead assignments
A1
Lead tip
(b, b2)
L
Diodes
Lꢁ
Detail “A”
Rotated 9ꢀ °CW
Scale: 8:1
Section B - B and C - C
Scale: None
10 - Anode (two die)/open (one die)
20, ꢁ0 - Cathode
30 - Anode
MILLIMETERS
SYMBOL
INCHES
MILLIMETERS
INCHES
NOTES
SYMBOL
NOTES
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
MAX.
4.83
0.254
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
MIN.
6.86
9.65
7.90
MAX.
8.00
MIN.
MAX.
0.315
0.420
0.346
A
A1
b
D1
E
0.270
0.380
0.311
3
2, 3
3
10.67
8.80
E1
e
b1
b2
b3
c
4
4
4
2
2.54 BSC
0.100 BSC
H
14.61
1.78
-
15.88
2.79
1.65
1.78
0.575
0.070
-
0.625
0.110
0.066
0.070
L
L1
L2
L3
L4
3
c1
c2
D
1.27
0.050
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
Notes
(1)
(7)
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Outline conforms to JEDEC outline TO-263AB
(2)
(3)
(4)
(5)
(6)
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Document Number: 95014
Revision: 31-Mar-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Outline Dimensions
Vishay Semiconductors
D2PAK, TO-262
DIMENSIONS - TO-262 in millimeters and inches
Modified JEDEC outline TO-262
(2) (3)
E
A
(Datum A)
B
A
c2
E
A
(3)
L1
D
Seating
plane
D1(3)
1
2
3
C
C
L2
B
B
L (2)
A
c
(3)
E1
3 x b2
3 x b
A1
Section A - A
2 x e
Base
metal
(ꢁ)
b1, b3
Plating
c
M
M
B
ꢀ0ꢀ1ꢀ
A
Lead assignments
c1
(ꢁ)
Diodes
10 - Anode (two die)/open (one die)
20, ꢁ0 - Cathode
30 - Anode
(b, b2)
Lead tip
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
SYMBOL
NOTES
MIN.
4.06
2.03
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
6.86
9.65
7.90
MAX.
4.83
3.02
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
8.00
10.67
8.80
MIN.
0.160
0.080
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
0.270
0.380
0.311
MAX.
0.190
0.119
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
0.315
0.420
0.346
A
A1
b
b1
b2
b3
c
4
4
4
c1
c2
D
2
3
D1
E
2, 3
3
E1
e
2.54 BSC
0.100 BSC
L
13.46
-
14.10
1.65
3.71
0.530
-
0.555
0.065
0.146
L1
L2
3
3.56
0.140
Notes
(1)
(6)
Dimensioning and tolerancing as per ASME Y14.5M-1994
Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Outline conform to JEDEC TO-262 except A1 (maximum), b
(minimum) and D1 (minimum) where dimensions derived the
actual package outline
(2)
(3)
(4)
(5)
Controlling dimension: inches
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For technical questions within your region, please contact one of the following:
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Document Number: 95014
Revision: 31-Mar-09
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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