TSAL7300 [VISHAY]
GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package; 的GaAs / GaAlAs的红外发光二极管在？ 5毫米（ T- 13/4 ）包装
| 型号： | TSAL7300 |
| 厂家： | 
VISHAY |
| 描述： | GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package |
| 文件： | 总6页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSAL7300
Vishay Telefunken
GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T–1 ) Package
94 8389
Description
TSAL7300 is a high efficiency infrared emitting diode
in GaAlAs on GaAs technology, molded in clear,
plastic packages.
In comparison with the standard GaAs on GaAs
technology these emitters achieve more than 100 %
radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
ideally suitable as high performance replacements of
standard emitters.
Features
Extra high radiant power and radiant intensity
Low forward voltage
Suitable for high pulse current operation
Standard T–1 (ø 5 mm) package
Angle of half intensity ϕ = ± 22
Peak wavelength = 940 nm
p
High reliability
Good spectral matching to Si photodetectors
Applications
Infrared remote control units with high power requirements
Free air transmission systems
Infrared source for optical counters and card readers
IR source for smoke detectors
Document Number 81013
Rev. 1, 20-May-99
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TSAL7300
Vishay Telefunken
Absolute Maximum Ratings
T
amb
= 25 C
Parameter
Reverse Voltage
Test Conditions
Symbol
Value
5
Unit
V
V
R
Forward Current
I
100
200
1,5
210
mA
mA
A
mW
C
C
C
C
K/W
F
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
t /T = 0.5, t = 100 s
t = 100 s
p
I
FM
p
p
I
FSM
P
T
V
100
j
T
–55...+100
–55...+100
260
amb
T
stg
t
5sec, 2 mm from case
T
sd
R
350
thJA
Basic Characteristics
T
amb
= 25 C
Parameter
Forward Voltage
Test Conditions
I = 100 mA, t = 20 ms
Symbol Min
Typ
1.35
2.6
Max
1.6
3
Unit
V
V
V
F
V
F
F
p
I = 1 A, t = 100 s
F
p
Temp. Coefficient of V
Reverse Current
I = 100 mA
V = 5 V
R
TK
VF
–1.875
mV/K
A
F
F
I
R
10
Junction Capacitance
Radiant Intensity
V = 0, f = 1 MHz, E = 0
C
25
45
350
35
pF
R
j
I = 100 mA, t = 20 ms
I
I
30
260
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
mm
F
p
e
I = 1 A, t = 100 s
F
p
e
Radiant Power
I = 100 mA, t = 20 ms
F p
I = 20 mA
F
e
Temp. Coefficient of
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of
Rise Time
TK
ϕ
–0.6
±22
940
50
0.2
800
500
800
500
2.1
e
e
p
I = 100 mA
F
p
I = 100 mA
F
I = 100 mA
TK
p
F
I = 100 mA
t
r
t
r
F
I = 1 A
F
Fall Time
I = 100 mA
t
t
F
f
I = 1 A
F
f
Virtual Source Diameter
method: 63% encircled
energy
ø
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Document Number 81013
Rev. 1, 20-May-99
TSAL7300
Vishay Telefunken
Typical Characteristics (Tamb = 25 C unless otherwise specified)
4
3
2
1
10
10
10
10
250
200
150
100
50
R
thJA
t = 100
t /T = 0.001
p
s
p
0
0
10
100
4
0
20
40
60
80
0
1
2
3
94 7957 e
T
amb
– Ambient Temperature ( °C )
13600
V
– Forward Voltage ( V )
F
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Forward Current vs. Forward Voltage
250
1.2
200
1.1
I
F
= 10 mA
150
100
1.0
0.9
0.8
0.7
R
thJA
50
0
100
100
0
20
40
60
80
0
20
40
60
80
96 11986
T
amb
– Ambient Temperature ( °C )
94 7990 e
T
amb
– Ambient Temperature ( °C )
Figure 2. Forward Current vs. Ambient Temperature
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
1
1000
10
100
10
1
I
= 1 A ( Single Pulse )
FSM
t /T=0.01
p
0.05
0
10
10
0.1
0.5
1.0
–1
0.1
–2
–1
0
1
2
0
1
2
3
4
10
10
10
10
10
10
10
10
I – Forward Current ( mA )
F
10
10
96 11987
t – Pulse Duration ( ms )
p
14327
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 6. Radiant Intensity vs. Forward Current
Document Number 81013
Rev. 1, 20-May-99
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TSAL7300
Vishay Telefunken
1.25
1.0
1000
100
10
0.75
0.5
0.25
0
1
I
= 100 mA
940
F
0.1
990
890
0
1
2
3
4
10
10
10
10
10
13602
I
F
– Forward Current ( mA )
14291
– Wavelength ( nm )
Figure 7. Radiant Power vs. Forward Current
Figure 9. Relative Radiant Power vs. Wavelength
0°
10
°
20
°
1.6
1.2
30°
40°
I
F
= 20 mA
1.0
0.9
0.8
0.4
0
50°
60°
0.8
0.7
70°
80°
140
0.6
–10 0 10
50
100
0.6
0.4
0.2
0
0.2
0.4
94 7993 e
T
amb
– Ambient Temperature ( °C )
94 8883
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
Figure 10. Relative Radiant Intensity vs.
Angular Displacement
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Document Number 81013
Rev. 1, 20-May-99
TSAL7300
Vishay Telefunken
Dimensions in mm
96 12126
Document Number 81013
Rev. 1, 20-May-99
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TSAL7300
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 81013
Rev. 1, 20-May-99
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