TSAL7400 [VISHAY]
GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package; 的GaAs / GaAlAs的红外发光二极管在？ 5毫米（ T- 13/4 ）包装
| 型号： | TSAL7400 |
| 厂家： | 
VISHAY |
| 描述： | GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package |
| 文件： | 总5页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSAL7400
Vishay Telefunken
GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T–1 )
Package
94 8389
Description
TSAL7400 is a high efficiency infrared emitting diode
in GaAlAs on GaAs technology, molded in clear plastic
packages.
In comparison with the standard GaAs on GaAs
technology these emitters achieve more than 100 %
radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
ideally suitable as high performance replacements of
standard emitters.
Features
Extra high radiant power and radiant intensity
High reliability
Low forward voltage
Suitable for high pulse current operation
Standard T–1 (ø 5 mm) package
Angle of half intensity ϕ = ± 25
Peak wavelength = 940 nm
p
Good spectral matching to Si photodetectors
Applications
Infrared remote control units with high power requirements
Free air transmission systems
Infrared source for optical counters and card readers
IR source for smoke detectors
Absolute Maximum Ratings
T
amb
= 25 C
Parameter
Reverse Voltage
Forward Current
Test Conditions
Symbol
Value
5
100
200
1.5
Unit
V
R
V
mA
mA
A
mW
C
C
C
C
K/W
I
F
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
t /T = 0.5, t = 100 s
I
FM
p
p
t = 100 s
I
p
FSM
P
V
210
100
–55...+100
–55...+100
260
T
j
T
amb
T
stg
t
5sec, 2 mm from case
T
sd
R
thJA
350
Document Number 81014
Rev. 3, 20-May-99
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TSAL7400
Vishay Telefunken
Basic Characteristics
T
amb
= 25 C
Parameter
Forward Voltage
Test Conditions
I = 100 mA, t = 20 ms
Symbol Min
Typ
1.35
2.6
Max
1.6
3
Unit
V
V
V
F
V
F
F
p
I = 1 A, t = 100 s
F
p
Temp. Coefficient of V
Reverse Current
I = 100mA
V = 5 V
R
TK
VF
–1.3
mV/K
A
F
F
I
R
10
Junction Capacitance
Radiant Intensity
V = 0 V, f = 1 MHz, E = 0
C
25
40
310
35
–0.6
±25
940
50
0.2
800
800
2.8
pF
R
j
I = 100 mA, t = 20 ms
I
I
25
220
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
F
p
e
I = 1.0 A, t = 100 s
F
p
e
Radiant Power
I = 100 mA, t = 20 ms
F p
I = 20 mA
F
e
Temp. Coefficient of
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of
Rise Time
TK
ϕ
e
e
p
I = 100 mA
F
p
I = 100 mA
F
I = 100 mA
TK
t
r
p
F
I = 100 mA
F
Fall Time
Virtual Source Diameter
I = 100 mA
t
f
ns
mm
F
method: 63% encircled
energy
ø
Typical Characteristics (Tamb = 25 C unless otherwise specified)
250
250
200
200
150
100
50
150
100
50
R
thJA
R
thJA
0
0
100
100
0
20
40
60
80
0
20
40
60
80
94 7957 e
T
amb
– Ambient Temperature ( °C )
96 11986
T
amb
– Ambient Temperature ( °C )
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
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Document Number 81014
Rev. 3, 20-May-99
TSAL7400
Vishay Telefunken
1
1000
100
10
10
10
10
I
= 1 A ( Single Pulse )
FSM
t /T=0.01
p
0.05
0
0.1
0.5
1
1.0
–1
0.1
–2
–1
0
1
2
0
1
2
3
4
10
10
10
10
10
10
10
10
10
10
96 11987
t – Pulse Duration ( ms )
p
96 12154
I – Forward Current ( mA )
F
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 6. Radiant Intensity vs. Forward Current
4
10
1000
3
100
10
1
10
2
10
t = 100
t /T = 0.001
p
s
p
1
10
0
0.1
10
4
0
1
2
3
0
1
2
3
4
10
10
10
10
10
13600
V – Forward Voltage ( V )
F
13602
I – Forward Current ( mA )
F
Figure 4. Forward Current vs. Forward Voltage
Figure 7. Radiant Power vs. Forward Current
1.2
1.6
1.1
1.2
I = 10 mA
F
I = 20 mA
F
1.0
0.9
0.8
0.7
0.8
0.4
0
100
140
0
20
40
60
80
–10 0 10
50
100
94 7990 e
T
amb
– Ambient Temperature ( °C )
94 7993 e
T
amb
– Ambient Temperature ( °C )
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
Document Number 81014
Rev. 3, 20-May-99
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3 (5)
TSAL7400
Vishay Telefunken
0°
10°
20°
1.25
1.0
30°
40°
1.0
0.9
0.8
0.75
0.5
50°
60°
70°
80°
0.25
0.7
I = 100 mA
F
0
890
990
0.6
940
– Wavelength ( nm )
0.6
0.4
0.2
0
0.2
0.4
14330
14291
Figure 9. Relative Radiant Power vs. Wavelength
Figure 10. Relative Radiant Intensity vs.
Angular Displacement
Dimensions in mm
14341
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Document Number 81014
Rev. 3, 20-May-99
TSAL7400
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 81014
Rev. 3, 20-May-99
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