TSAL6200_08 [VISHAY]
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs; 高功率红外发光二极管，符合RoHS ， 940纳米，砷化镓铝/砷化镓
| 型号： | TSAL6200_08 |
| 厂家： | 
VISHAY |
| 描述： | High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs |
| 文件： | 总5页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSAL6200
Vishay Semiconductors
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm,
GaAlAs/GaAs
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = 17ꢀ
94 8389
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
DESCRIPTION
TSAL6200 is an infrared, 940 nm emitting diode in
GaAlAs/GaAs technology with high radiant power molded in
a blue-gray plastic package.
APPLICATIONS
• Infrared remote control units with high power requirements
• Free air transmission systems
• Infrared source for optical counters and card readers
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λ
P (nm)
tr (ns)
TSAL6200
60
17
940
800
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
Bulk
REMARKS
PACKAGE FORM
TSAL6200
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
5
UNIT
V
Reverse voltage
VR
IF
Forward current
100
200
1.5
mA
mA
A
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.5, tp = 100 µs
tp = 100 µs
IFM
IFSM
PV
Tj
160
100
mW
ꢀC
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Tamb
Tstg
Tsd
- 40 to + 85
- 40 to + 100
260
ꢀC
ꢀC
t ≤ 5 s, 2 mm from case
ꢀC
J-STD-051, leads 7 mm soldered
on PCB
Thermal resistance junction/ambient
RthJA
230
K/W
Note
Tamb = 25 ꢀC, unless otherwise specified
Document Number: 81010
Rev. 2.1, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
107
TSAL6200
High Power Infrared Emitting Diode, RoHS
Compliant, 940 nm, GaAlAs/GaAs
Vishay Semiconductors
120
100
180
160
140
120
100
80
RthJA = 230 K/W
60
80
60
40
20
0
RthJA = 230 K/W
40
20
0
0
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (ꢀC)
0
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (ꢀC)
21212
21211
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
1.35
2.6
MAX.
1.6
3
UNIT
V
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
IF = 1 mA
VF
VF
TKVF
IR
Forward voltage
V
Temperature coefficient of VF
Reverse current
- 1.8
mV/K
µA
V
R = 5 V
10
Junction capacitance
V
R = 0 V, f = 1 MHz, E = 0
Cj
25
60
pF
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
IF = 100 mA, tp = 20 ms
IF = 20 mA
Ie
40
200
mW/sr
mW/sr
mW
%/K
deg
nm
Radiant intensity
Ie
340
500
35
Radiant power
φe
Temperature coefficient of φe
Angle of half intensity
Peak wavelength
TKφe
ϕ
- 0.6
17
IF = 100 mA
IF = 100 mA
λp
940
50
Spectral bandwidth
Temperature coefficient of λp
Rise time
Δλ
TKλp
tr
nm
IF = 100 mA
0.2
800
800
2.4
nm/K
ns
IF = 100 mA
Fall time
IF = 100 mA
tf
ns
Virtual source diameter
method: 63 % encircled energy
d
mm
Note
amb = 25 ꢀC, unless otherwise specified
T
www.vishay.com
108
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81010
Rev. 2.1, 04-Sep-08
TSAL6200
High Power Infrared Emitting Diode, RoHS
Compliant, 940 nm, GaAlAs/GaAs
Vishay Semiconductors
BASIC CHARACTERISTICS
Tamb = 25 ꢀC, unless otherwise specified
101
1000
100
10
I
= 1 A (Single Pulse)
FSM
t /T = 0.01
p
0.05
100
0.1
0.5
1
1.0
10-1
0.1
10-2
10-1
100
101
102
100
101
102
103
104
tp - Pulse Duration (ms)
IF - Forward Current (mA)
96 11987
13602
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 6 - Radiant Power vs. Forward Current
104
103
1.6
1.2
IF = 20 mA
102
0.8
0.4
0
tP = 100 µs
tP/T = 0.001
101
100
1
140
0
2
3
4
- 10 0 10
50
100
VF - Forward Voltage (V)
Tamb - Ambient Temperature (ꢀC)
13600
94 7993
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature
1000
100
10
1.25
1.0
0.75
0.5
1
0.25
IF = 100 mA
0
0.1
890
990
940
0
1
2
3
4
10
10
10
10
10
14291
- Wavelength (nm)
λ
IF - Forward Current (mA)
13601
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Relative Radiant Power vs. Wavelength
Document Number: 81010
Rev. 2.1, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
109
TSAL6200
High Power Infrared Emitting Diode, RoHS
Compliant, 940 nm, GaAlAs/GaAs
Vishay Semiconductors
0ꢀ
10ꢀ
20ꢀ
30ꢀ
40ꢀ
1.0
0.9
50ꢀ
60ꢀ
0.8
70ꢀ
0.7
80ꢀ
0.6 0.4 0.2
0
14329
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
C
A
R 2.49 (sphere)
Area not plane
0.15
+ 0.2
- 0.1
5
0.6
technical drawings
according to DIN
specifications
+ 0.15
- 0.05
0.5
0.5 +- 00..0155
2.54 nom.
6.544-5259.06-4
Issue: 5; 27.09.05
19257
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110
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81010
Rev. 2.1, 04-Sep-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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