TSAL6100-MSZ [VISHAY]
Infrared LED, LAMP,IRED,940NM PEAK WAVELENGTH,LED-2B;
| 型号： | TSAL6100-MSZ |
| 厂家： | 
VISHAY |
| 描述： | Infrared LED, LAMP,IRED,940NM PEAK WAVELENGTH,LED-2B 半导体 红外LED 光电 二极管 |
| 文件： | 总5页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSAL6100
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = 10ꢀ
94 8389
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DESCRIPTION
TSAL6100 is an infrared, 940 nm emitting diode in
GaAlAs/GaAs technology with high radiant power molded in
a blue-gray plastic package.
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Infrared remote control units with high power reqirements
• Free air transmission systems
• Infrared source for optical counters and card readers
• IR source for smoke detectors
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λ
P (nm)
tr (ns)
TSAL6100
130
10
940
800
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
Bulk
REMARKS
PACKAGE FORM
TSAL6100
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
5
UNIT
V
Reverse voltage
VR
IF
Forward current
100
200
1.5
mA
mA
A
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.5, tp = 100 µs
tp = 100 µs
IFM
IFSM
PV
Tj
160
100
mW
ꢀC
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Tamb
Tstg
Tsd
- 40 to + 85
- 40 to + 100
260
ꢀC
ꢀC
t ≤ 5 s, 2 mm from case
ꢀC
J-STD-051, leads 7 mm soldered
on PCB
Thermal resistance junction/ambient
RthJA
230
K/W
Note
amb = 25 ꢀC, unless otherwise specified
T
Document Number: 81009
Rev. 1.6, 29-Jun-09
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
1
TSAL6100
High Power Infrared Emitting Diode,
940 nm, GaAlAs/GaAs
Vishay Semiconductors
120
100
80
60
40
20
0
180
160
140
120
100
RthJA = 230 K/W
80
60
40
20
0
RthJA = 230 K/W
0
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (ꢀC)
0
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (ꢀC)
21212
21211
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
1.35
2.6
MAX.
1.6
3
UNIT
V
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
IF = 1 mA
VF
VF
TKVF
IR
Forward voltage
V
Temperature coefficient of VF
Reverse current
- 1.8
mV/K
µA
V
R = 5 V
10
Junction capacitance
V
R = 0 V, f = 1 MHz, E = 0
Cj
25
130
1000
35
pF
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
IF = 100 mA, tp = 20 ms
IF = 20 mA
Ie
80
400
mW/sr
mW/sr
mW
%/K
deg
nm
Radiant intensity
Ie
650
Radiant power
φe
Temperature coefficient of φe
Angle of half intensity
Peak wavelength
TKφe
ϕ
- 0.6
10
IF = 100 mA
IF = 100 mA
λp
940
50
Spectral bandwidth
Temperature coefficient of λp
Rise time
Δλ
TKλp
tr
nm
IF = 100 mA
0.2
nm/K
ns
IF = 100 mA
800
800
3.7
Fall time
IF = 100 mA
tf
ns
Virtual source diameter
Method: 63 % encircled energy
d
mm
Note
amb = 25 ꢀC, unless otherwise specified
T
www.vishay.com
2
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81009
Rev. 1.6, 29-Jun-09
TSAL6100
High Power Infrared Emitting Diode,
940 nm, GaAlAs/GaAs
Vishay Semiconductors
BASIC CHARACTERISTICS
Tamb = 25 ꢀC, unless otherwise specified
101
1000
100
10
I
= 1 A (Single Pulse)
FSM
t /T = 0.01
p
0.05
100
0.1
0.5
1
1.0
10-1
0.1
100
101
102
103
104
10-2
10-1
100
101
102
IF - Forward Current (mA)
tp - Pulse Duration (ms)
13602
96 11987
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 6 - Radiant Power vs. Forward Current
104
103
1.6
1.2
IF = 20 mA
102
0.8
0.4
0
tP = 100 µs
tP/T = 0.001
101
100
140
1
0
2
3
4
- 10 0 10
Tamb - Ambient Temperature (ꢀC)
94 7993
50
100
VF - Forward Voltage (V)
13600
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Rel. Radiant Intensity/Power vs. Ambient Temperature
1000
100
10
1.25
1.0
0.75
0.5
1
0.25
IF = 100 mA
0
0.1
890
990
940
100
101
102
103
104
14291
- Wavelength (nm)
λ
IF - Forward Current (mA)
14438
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Relative Radiant Power vs. Wavelength
Document Number: 81009
Rev. 1.6, 29-Jun-09
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
3
TSAL6100
High Power Infrared Emitting Diode,
940 nm, GaAlAs/GaAs
Vishay Semiconductors
0ꢀ
10ꢀ
20ꢀ
30ꢀ
40ꢀ
1.0
0.9
50ꢀ
60ꢀ
0.8
70ꢀ
0.7
80ꢀ
0.6 0.4 0.2
0
15989
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
C
A
R2.49 (sphere)
Area not plane
Ø 5 0.15
+ 0.2
- 0.1
0.6
technical drawings
according to DIN
specifications
+ 0.15
- 0.05
0.5
+ 0.15
- 0.05
0.5
2.54 nom.
6.544-5259.08-4
Issue: 3; 19.05.09
14436
www.vishay.com
4
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81009
Rev. 1.6, 29-Jun-09
Legal Disclaimer Notice
Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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