TFDU6103-TR3 [VISHAY]
Fast Infrared Transceiver Module (FIR, 4 Mbit/s) for 2.4 V to 5.5 V Operation; 快速红外收发器模块（ FIR ， 4兆位/秒）为2.4 V至5.5 V操作
| 型号： | TFDU6103-TR3 |
| 厂家： | 
VISHAY |
| 描述： | Fast Infrared Transceiver Module (FIR, 4 Mbit/s) for 2.4 V to 5.5 V Operation |
| 文件： | 总15页 (文件大小：265K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TFDU6103
Vishay Semiconductors
Fast Infrared Transceiver Module (FIR, 4 Mbit/s)
for 2.4 V to 5.5 V Operation
Description
The TFDU6103 is a low-power infrared transceiver
module compliant to the latest IrDA physical layer
standard for fast infrared data communication,
supporting IrDA speeds up to 4.0 Mbit/s (FIR), and
carrier based remote control modes up to 2 MHz.
Integrated within the transceiver module are a PIN
photodiode, an infrared emitter (IRED), and a low-
power CMOS control IC to provide a total front-end
solution in a single package.
20110
Vishay FIR transceivers are available in different modulation/demodulation function, including National
package options, including this BabyFace package Semiconductor’s PC87338, PC87108 and PC87109,
(TFDU6103). This wide selection provides flexibility SMC’s FDC37C669, FDC37N769 and CAM35C44,
for a variety of applications and space constraints. and Hitachi’s SH3. TFDU6103 has a tri-state output
The transceivers are capable of directly interfacing and is floating in shut-down mode with a weak pull-up.
with a wide variety of I/O devices which perform the
Features
• Supply voltage 2.4 V to 5.5 V, operating
idle current (receive mode) < 3.3 mA,
shutdown current < 1 µA over full
temperature range
• EMI immunity > 550 V/m for GSM frequency and
other mobile telephone bands/
(700 MHz to 2000 MHz, no external shield)
e3
• Split power supply, LED can be driven by a
separate power supply not loading the regulated
supply. U.S. Pat. No. 6,157,476
• Surface mount package, top and side
view, 9.7 mm x 4.7 mm x 4.0 mm
• Operating temperature - 25 °C to 85 °C
• Tri-state-receiver output, floating in shut down with
a weak pull-up
• Eye safety class 1 (IEC 60825-1, ed. 2001), limited
LED on-time, LED current is controlled, no single
fault to be considered
• Transmitter wavelength typ. 886 nm, supporting
®
IrDA and remote control
®
• IrDA compliant, link distance > 1 m,
15°,
window losses are allowed to still be inside the
®
IrDA spec.
• Lead (Pb)-free device
• Remote control range > 8 m, typ. 22 m
• ESD > 1 kV
• Qualified for lead (Pb)-free and Sn/Pb processing
(MSL4)
• Device in accordance with RoHS 2002/95/EC and
WEEE 2002/96EC
• Latchup > 100 mA
Applications
• Notebook computers, desktop PCs, Palmtop
computers (Win CE, Palm PC), PDAs
• Telecommunication products
(cellular phones, pagers)
• Digital still and video cameras
• Printers, fax machines, photocopiers,
screen projectors
• Internet TV boxes, video conferencing systems
• External infrared adapters (dongles)
• Medical an industrial data collection
Parts Table
Part
Description
Oriented in carrier tape for side view surface mounting
Oriented in carrier tape for top view surface mounting
Qty/reel
1000 pcs
1000 pcs
TFDU6103-TR3
TFDU6103-TT3
Document Number 81211
Rev. 1.3, 03-Jul-08
www.vishay.com
1
TFDU6103
Vishay Semiconductors
Functional Block Diagram
VCC1
Tri-State
Driver
RXD
Amplifier
Comparator
VCC2
Logic
and
Control
Controlled
Driver
SD
TXD
IRED C
18468
GND
Pinout
Definitions:
TFDU6103
weight 200 mg
In the Vishay transceiver data sheets the following nomenclature is
used for defining the IrDA operating modes:
SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared
standard with the physical layer version IrPhy 1.0
MIR: 576 kbit/s to 1152 kbit/s
FIR: 4 Mbit/s
"U" Option BabyFace
(Universal)
VFIR: 16 Mbit/s
IRED
Detector
MIR and FIR were implemented with IrPhy 1.1, followed by IrPhy
1.2, adding the SIR Low Power Standard. IrPhy 1.3 extended the
Low Power Option to MIR and FIR and VFIR was added with IrPhy
1.4.A new version of the standard in any case obsoletes the former
version.
Note: We apologize to use sometimes in our documentation the
abbreviation LED and the word Light Emitting Diode instead of
Infrared Emitting Diode (IRED) for IR-emitters. That is by definition
wrong; we are here following just a bad trend.
1
2
3 4
5
6
7 8
17087
Typical values are for design aid only, not guaranteed nor subject
to production testing and may vary with time.
www.vishay.com
2
Document Number 81211
Rev. 1.3, 03-Jul-08
TFDU6103
Vishay Semiconductors
Pin Description
Pinnumber
Function
Description
I/O
Active
VCC2
Connect IRED anode directly to VCC2. For voltages higher than 3.6 V an external
resistor might be necessary for reducing the internal power dissipation.
An unregulated separate power supply can be used at this pin.
1
IRED
Anode
IRED
Cathode
2
3
IRED cathode, internally connected to driver transistor
This input is used to transmit serial data when SD is low. An on-chip protection circuit
disables the LED driver if the TXD pin is asserted for longer than 100 µs. When used
in conjunction with the SD pin, this pin is also used to set receiver speed mode.
TXD
RXD
I
High
Low
Received Data Output, push-pull CMOS driver output capable of driving a standard
CMOS or TTL load. No external pull-up or pull-down resistor is required. Floating with
a weak pull-up of 500 kΩ (typ.) in shutdown mode.
4
5
O
Shutdown, also used for dynamic mode switching. Setting this pin active places the
module into shutdown mode. On the falling edge of this signal, the state of the TXD pin
is sampled and used to set receiver low bandwidth (TXD = Low, SIR) or high bandwidth
(TXD = High, MIR and FIR) mode.
SD
I
High
VCC1
6
7
8
Supply voltage
NC
GND
Ground
Absolute Maximum Ratings
Reference point Ground Pin 8, unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Parameter
Test conditions
Symbol
Min.
Typ.
Max.
Unit
V
Supply voltage range,
transceiver
0 V < VCC2 < 6 V
VCC1
- 0.5
+ 6
+ 6.5
10
Supply voltage range,
transmitter
0 V < VCC1 < 6 V
VCC2
- 0.5
V
For all pins, except IRED anode
pin
Input currents
mA
Output sinking current
Power dissipation
25
mA
mW
°C
See derating curve, figure 5
PD
TJ
500
125
Junction temperature
Ambient temperature range
(operating)
Tamb
Tstg
- 25
- 25
+ 85
+ 85
260
°C
°C
°C
Storage temperature range
See recommended solder
profile (see figure 4)
Soldering temperature
Average output current
I
IRED (DC)
125
600
+ 6.5
5.5
mA
mA
V
Repetitive pulse output current
IRED anode voltage
< 90 µs, ton < 20 %
IIRED (RP)
VIREDA
VIN
- 0.5
Voltage at all inputs and outputs
Vin > VCC1 is allowed
V
Eye safety information
Reference point Pin: GND unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Parameter
Test conditions
Symbol
Min.
Typ.
2.8
Max.
Unit
mm
Method: (1 - 1/e) encircled
energy
Virtual source size
d
2.5
Document Number 81211
Rev. 1.3, 03-Jul-08
www.vishay.com
3
TFDU6103
Vishay Semiconductors
Laser/LED safety information
With the edition IEC/EN 60825-1:2006 LEDs were removed from the basic laser eye safety standard but are still covered by
DIN EN 60825-12 (VDE 0837-12):2004-12 (or equivalent IEC standard). Therefore still a risk assessment is necessary according the
test conditions of the basic standard, which were changed in respect to the former editions.
We recommend using the so-called simplified method not taking the virtual source size into account.
Our devices are tested for not to exceed the given eye safety limit according class 1 using the simplified assessment with C6 = 1.
(When the virtual source size would be taken into account, the safety limit is even higher.)
LEDs for communication applications are covered by the following safety regulations:
IEC/EN 60825-1:2006, DIN EN 60825-12 (VDE 0837-12):2004-12, see above IEC 62471 Ed. 1:2006, “Photobiological Safety of Lamps
and Lamp Systems": TFDU6301 is in the "Exempt Group"
"DIRECTIVE 2006/25/EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 5. April 2006" on the minimum health and
safety requirements regarding the exposure of workers to risks arising from physical agents (artificial optical radiation) (19th individual
Directive within the meaning of Article 16 (1) of Directive 89/391/EEC): TFDU6301 is in accordance with this regulation.
Electrical Characteristics
Transceiver
Tamb = 25 °C, VCC1 = VCC2 = 2.4 V to 5.5 V unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Parameter
Supply voltage
Test conditions
Symbol
VCC
Min.
2.4
Typ.
Max.
5.5
Unit
V
Receive mode only, idle
In transmit mode, add additional 85 mA (typ) for IRED current.
Add RXD output current depending on RXD load.
Dynamic supply current
Shutdown supply current
ICC
ICC
SIR mode
1.8
2.0
3.0
3.3
mA
mA
MIR/FIR mode
SD = High
T = 25 °C, not ambient light
sensitive, detector is disabled in
shutdown mode
ISD
0.01
µA
SD = High, full specified
temperature range, not ambient
light sensitive
ISD
1
µA
TA
Operating temperature range
- 25
+ 85
0.5
°C
V
Input voltage low
(TXD, SD)
VIL
- 0.5
Input voltage high
(TXD, SD)
CMOS level 1)
VIH
VCC - 0.3
- 1
6
V
Input leakage current
(TXD, SD)
Vin = 0.9 x VCC1
IICH
+ 1
µA
CI
Input capacitance, TXD, SD
Output voltage low
5
pF
V
IOL = 500 µA, Cload = 15 pF
IOH = 250 µA, Cload = 15 pF
VOL
VOH
0.4
0.9 x VCC1
Output voltage high
V
Output RXD current limitation
high state
low state
Short to ground
Short to VCC1
20
20
mA
mA
SD shutdown pulse duration
RXD to VCC1 impedance
Activating shutdown
30
∝
µs
RRXD
tSDPW
400
500
600
kΩ
SD mode programming pulse
duration
All modes
200
ns
Note:
1) The typical threshold level is 0.5 x VCC1 (VCC1 = 3 V) . It is recommended to use the specified min/max values to avoid increased
operating current
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4
Document Number 81211
Rev. 1.3, 03-Jul-08
TFDU6103
Vishay Semiconductors
Optoelectronic Characteristics
Receiver
Tamb = 25 °C, VCC = 2.4 V to 5.5 V unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Parameter
Test conditions
Symbol
Min.
Typ.
Max.
Unit
Minimum irradiance Ee in
9.6 kbit/s to 115.2 kbit/s
λ = 850 nm to 900 nm
25
(2.5)
35
(3.5)
mW/m2
Ee
angular range 2) SIR mode
(µW/cm2)
Minimum irradiance Ee in
angular range, MIR mode
1.152 Mbit/s
λ = 850 nm to 900 nm
65
(6.5)
mW/m2
Ee
Ee
Ee
Ee
(µW/cm2)
Minimum irradiance Ee
inangular range, FIR mode
4.0 Mbit/s
λ = 850 nm to 900 nm
80
(8.0)
90
(9.0)
mW/m2
(µW/cm2)
Maximum irradiance Ee in
angular range 3)
5
kW/m2
λ = 850 nm to 900 nm
(500)
(mW/cm2)
Maximum no detection
irradiance
4
(0.4)
mW/m2
1)
(µW/cm2)
tr (RXD)
tf (RXD)
Rise time of output signal
Fall time of output signal
10 % to 90 %, 15 pF
90 % to 10 %, 15 pF
10
10
40
40
ns
ns
Input pulse length, 1.4 μs < PWopt < 25 µs
tPW
tPW
tPW
tPW
tPW
2.1
1.8
250
µs
µs
RXD pulse width of output
signal, 50 %, SIR mode
Input pulse length, 1.4 μs < PWopt < 25 µs,
1.5
110
100
225
2.6
- 25 °C < T < 85 °C 4)
Input pulse length, PWopt = 217 ns,
1.152 Mbit/s
RXD pulse width of output
signal, 50 %, MIR mode
270
140
275
20
ns
ns
ns
ns
ns
ns
ns
Input pulse length, PWopt = 125 ns,
4.0 Mbit/s
RXD pulse width of output
signal, 50 %, FIR mode
Input pulse length, PWopt = 250 ns,
4.0 Mbit/s
Input irradiance = 100 mW/m2, 4.0 Mbit/s
Input irradiance = 100 mW/m2, 1.152 Mbit/s
Input irradiance = 100 mW/m2, 576 kbit/s
40
Stochastic jitter, leading edge
Receiver start up time
80
Input irradiance = 100 mW/m2,
≤ 115.2 kbit/s
After completion of shutdown programming
sequence
350
250
100
µs
µs
power on delay
tL
Latency
Note:
40
All timing data measured with 4 Mbit/s are measured using the IrDA® FIR transmission header. The data given here are valid 5 µs after
starting the preamble.
1) This parameter reflects the backlight test of the IrDA physical layer specification to guarantee immunity against light from fluorescent
lamps
2) IrDA sensitivity definition: Minimum Irradiance Ee In Angular Range, power per unit area. The receiver must meet the BER
specification while the source is operating at the minimum intensity in angular range into the minimum half-angle range at the maximum
Link Length
3) Maximum Irradiance Ee In Angular Range, power per unit area. The optical delivered to the detector by a source operating at the
maximum intensity in angular range at Minimum Link Length must not cause receiver overdrive distortion and possible related link
errors. If placed at the Active Output Interface reference plane of the transmitter, the receiver must meet its bit error ratio (BER).
4) Retriggering once during applied optical pulse may occur
For more definitions see the document "Symbols and Terminology" on the Vishay Website
(http://www.vishay.com/doc?82512).
Document Number 81211
Rev. 1.3, 03-Jul-08
www.vishay.com
5
TFDU6103
Vishay Semiconductors
Transmitter
Tamb = 25 °C, VCC1 = VCC2 = 2.4 V to 5.5 V unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Parameter
Test conditions
Symbol
Min.
330
Typ.
440
t
Max.
600
Unit
mA
Note: No external resistor current
limiting resistor is needed for VCC1
IRED operating current,
switched current limiter
ID
= VCC2 = 3.3 V
tpw
tpw
tpw_lim
IIRED
Input pulse width t < 20 µs
Input pulse width 20 µs < t < 150 µs
Input pulse width t ≥ 150 µs
µs
µs
µs
µA
Output pulse width limitation
Output leakage IRED current
18
150
150
1
- 1
Output radiant intensity, see
figure 3, recommended
application circuit
V
CC = VIRED = 3.3 V, α = 0°
4681)
4681)
0.04
Ie
110
170
130
mW/sr
mW/sr
TXD = High, SD = Low, R1 = 1 Ω
Output radiant intensity, see
figure 3, recommended
application circuit
V
CC = VIRED = 3.3 V, α = 0°, 15°
TXD = High, SD = Low, R1 = 1 Ω
Ie
100
VCC1 = 3.3 V, α = 0°, 15°
TXD = Low or SD = High (Receiver
is inactive as long as SD = High)
Ie
Output radiant intensity
mW/sr
°
Output radiant intensity, angle of
half intensity
α
24
Peak - emission wavelength2)
Spectral bandwidth
λp
875
10
886
45
900
40
nm
nm
Δλ
tropt
tfopt
,
Optical rise time,
Optical fall time
ns
Input pulse width 217 ns,
1.152 Mbit/s
topt
topt
topt
207
117
242
217
125
250
227
133
ns
ns
Input pulse width 125 ns,
4.0 Mbit/s
Optical output pulse duration
Input pulse width 250 ns,
4.0 Mbit/s
258
25
ns
%
Optical overshoot
Note:
1) Maximum value is given by eye safety class 1, IEC 60825-1, simplified method.
2) Due to this wavelength restriction compared to the IrDA spec of 850 nm to 900 nm the transmitter is able to operate as source for the
®
standard Remote Control applications with codes as e.g. Philips RC5/RC6 or RECS 80. When operated under IrDA full range
conditions (125 mW/sr) the RC range to be covered is in the range from 8 m to 12 m, provided that state of the art remote control
receivers are used.
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6
Document Number 81211
Rev. 1.3, 03-Jul-08
TFDU6103
Vishay Semiconductors
Recommended Circuit Diagram
Vishay Semiconductors transceivers integrate a higher operating voltages and elevated temperatures,
sensitive receiver and a built-in power driver. The see derating curve in figure 5, to avoid too high
combination of both needs a careful circuit board internal power dissipation.
layout. The use of thin, long, resistive and inductive
wiring should be avoided. The inputs (TXD, SD) and
the output RXD should be directly (DC) coupled to the
I/O circuit.
The capacitors C2 and C3 combined with the resistor
R2 (as the low pass filter) is smoothing the supply
voltage V
. R2, C1, C2, and C3 are optional and
CC1
dependent on the quality of the supply voltages V
CC1
and
V
and injected noise. An unstable power
CC2
supply with dropping voltage during transmission may
reduce sensitivity (and transmission range) of the
transceiver. The placement of these parts is critical. It
is strongly recommended to position C2 and C3 as
close as possible to the transceiver power supply
pins. An Tantalum capacitor should be used for C1
and C3 while a ceramic capacitor is used for C2.
In addition, when connecting the described circuit to
the power supply, low impedance wiring should be
used.
Vcc2
Vcc1
R1
C3
IRED Anode
R2
C1
Vcc
C2
Ground
GND
SD
SD
TXD
RXD
TXD
RXD
When extended wiring is used the inductance of the
power supply can cause dynamically a voltage drop
IRED Cathode
19789
at V
. Often some power supplies are not apply to
CC2
follow the fast current is rise time. In that case another
4.7 µF (type, see table under C1) at V
helpful.
will be
CC2
Figure 1. Recommended Application Circuit
Keep in mind that basic RF-design rules for circuit
design should be taken into account. Especially
longer signal lines should not be used without
termination. See e.g. "The Art of Electronics" Paul
Horowitz, Wienfield Hill, 1989, Cambridge University
Press, ISBN: 0521370957.
The capacitor C1 is buffering the supply voltage and
reduces the influence of the inductance of the power
supply line. This one should be a Tantalum or other
fast capacitor to guarantee the fast rise time of the
IRED current. The resistor R1 is only necessary for
Table 1.
Recommended Application Circuit Components
Component
C1, C3
C2
Recommended value
Vishay part number
293D 475X9 016B
4.7 µF, 16 V
0.1 µF, Ceramic
VJ 1206 Y 104 J XXMT
3.3 V supply voltage: no resistors necessary, the internal
R1
R2
e.g. 2 x CRCW-1206-1R0-F-RT1
CRCW-1206-10R0-F-RT1
controller is able to control the current
10 Ω, 0.125 W
Document Number 81211
Rev. 1.3, 03-Jul-08
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7
TFDU6103
Vishay Semiconductors
I/O and Software
In the description, already different I/Os are men-
tioned. Different combinations are tested and the
function verified with the special drivers available
from the I/O suppliers. In special cases refer to the
I/O manual, the Vishay application notes, or contact
directly Vishay Sales, Marketing or Application.
Setting to the Lower Bandwidth Mode
(2.4 kbit/s to 115.2 kbit/s)
1. Set SD input to logic "High".
2. Set TXD input to logic "Low". Wait t ≥ 200 ns.
s
3. Set SD to logic "Low" (this negative edge latches
state of TXD, which determines speed setting).
4. TXD must be held for t ≥ 200 ns.
h
Mode Switching
After that TXD is enabled as normal TXD input and the
transceiver is set for the lower bandwidth (9.6 kbit/s to
115.2 kbit/s) mode.
The TFDU6103 is in the SIR mode after power on as
a default mode, therefore the FIR data transfer rate
has to be set by a programming sequence using the
TXD and SD inputs as described below. The low
frequency mode covers speeds up to 115.2 kbit/s.
Signals with higher data rates should be detected in
the high frequency mode. Lower frequency data can
also be received in the high frequency mode but with
reduced sensitivity.
To switch the transceivers from low frequency mode
to the high frequency mode and vice versa, the
programming sequences described below are
required.
Note:
When applying this sequence to the device already in the lower
bandwidth mode, the SD pulse is interpreted as shutdown. In this
case the RXD output of the transceiver may react with a single
pulse (going active low) for a duration less than 2 µs. The operating
software should take care for this condition.
In case the applied SD pulse is longer than 4 µs, no RXD pulse is
to be expected but the receiver startup time is to be taken into
account before the device is in receive condition.
50 %
SD
Setting to the High Bandwidth Mode
(0.576 Mbit/s to 4.0 Mbit/s)
1. Set SD input to logic "High".
t
s
t
h
High: FIR
Low: SIR
50 %
50 %
TXD
2. Set TXD input to logic "High". Wait t ≥ 200 ns.
s
3. Set SD to logic "Low" (this negative edge latches
state of TXD, which determines speed setting).
14873
4. After waiting t ≥ 200 ns TXD can be set to logic
"Low". The hold time of TXD is limited by the
maximum allowed pulse length.
h
Figure 2. Mode Switching Timing Diagram
After that TXD is enabled as normal TXD input and the
transceiver is set for the high bandwidth (576 kbit/s to
4 Mbit/s) mode.
Table 2.
Truth table
Inputs
Outputs
Optical input irradiance mW/m2
SD
TXD
RXD
Transmitter
Weakly pulled
(500 kΩ) to VCC1
High
x
x
0
Ie
High
High > 150 µs
Low
x
Low (active)
High
x
0
0
< 4
High
Low
> Min. irradianceEe
< Max. irradiance Ee
Low
Low
Low (active)
x
0
0
> Max. irradiance Ee
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8
Document Number 81211
Rev. 1.3, 03-Jul-08
TFDU6103
Vishay Semiconductors
Recommended Solder Profiles
Solder Profile for Sn/Pb Soldering
260
on the packing and also in the application note
"Taping, Labeling, Storage and Packing"
(http://www.vishay.com/doc?82601).
10 s max. at 230 °C
240
220
200
180
160
140
120
100
80
240 °C max.
2 to 4 °C/s
275
160 °C max.
≥
T
= 260 °C
T
255 °C for 10 s....30 s
peak
250
225
200
175
150
125
100
75
≥
T
217 °C for 70 s max.
120 to180 s
90 s max.
2 to 4 °C/s
60
40
20
30 s max.
70 s max.
90 s to 120 s
2 °C to 4 °C/s
0
0
50
100
150
200
250
300
350
2 °C to 3 °C/s
50
19535
Time/s
25
Figure 3. Recommended Solder Profile for Sn/Pb soldering
0
0
50
100
150
Time/s
Figure 4. Solder Profile, RSS Recommendation
200
250
300
350
19532
Lead (Pb)-Free, Recommended Solder Profile
The TFDU6103 is a lead (Pb)-free transceiver and
qualified for lead (Pb)-free processing. For lead
(Pb)-free solder paste like Sn (3.0 - 4.0) Ag (0.5 - 0.9)
Cu, there are two standard reflow profiles:
Ramp-Soak-Spike (RSS) and Ramp-To-Spike (RTS).
The Ramp-Soak-Spike profile was developed
primarily for reflow ovens heated by infrared radiation.
With widespread use of forced convection reflow
ovens the Ramp-To-Spike profile is used
increasingly. Shown below in figure 4 and 5 are
VISHAY's recommended profiles for use with the
TFDU6103 transceivers. For more details please
refer to the application note
280
T
peak
= 260 °C max.
260
240
220
200
180
160
140
120
100
80
< 4 °C/s
1.3 °C/s
Time above 217 °C t ≤ 70 s
< 2 °C/s
≤
Time above 250 °C t 40 s
Peak temperature T
= 260 °C
peak
60
40
20
“SMD Assembly Instructions”
(http://www.vishay.com/doc?82602).
0
0
50
100
150
200
250
300
TFDU Fig3
Time/s
A
ramp-up rate less than 0.9 °C/s is not
Figure 5. RTS Recommendation
recommended. Ramp-up rates faster than 1.3 °C/s
could damage an optical part because the thermal
conductivity is less than compared to a standard IC.
Current Derating Diagram
Figure 6 shows the maximum operating temperature
when the device is operated without external current
limiting resistor. A power dissipating resistor of 2 Ω is
recommended from the cathode of the IRED to
Ground for supply voltages above 4 V. In that case
the device can be operated up to 85 °C, too.
Wave Soldering
For TFDUxxxx and TFBSxxxx transceiver devices
wave soldering is not recommended.
Manual Soldering
Manual soldering is the standard method for lab use.
However, for a production process it cannot be
recommended because the risk of damage is highly
dependent on the experience of the operator.
Nevertheless, we added a chapter to the above
mentioned application note, describing manual
soldering and desoldering.
90
85
80
75
70
65
Storage
60
The storage and drying processes for all VISHAY
transceivers (TFDUxxxx and TFBSxxx) are
equivalent to MSL4.
55
50
4.5
2.0
2.5
3.0
3.5
4.0
5.0
5.5
6.0
The data for the drying procedure is given on labels
18097
Operating Voltage (V) at duty cycle 20 %
Figure 6. Temperature Derating Diagram
Document Number 81211
Rev. 1.3, 03-Jul-08
www.vishay.com
9
TFDU6103
Vishay Semiconductors
Package Dimensions in mm
20111
Figure 7. Package drawing and solder footprints for top and side view mounting TFDU6103, dimensions in mm, tolerance 0.2 mm if not
otherwise mentioned
www.vishay.com
10
Document Number 81211
Rev. 1.3, 03-Jul-08
TFDU6103
Vishay Semiconductors
Reel Dimensions in mm
Drawing-No.: 9.800-5090.01-4
Issue: 1; 29.11.05
14017
W1 min.
W2 max.
W3 min.
W3 max.
Tape width
mm
A max.
mm
N
mm
60
mm
mm
mm
mm
24
330
24.4
30.4
23.9
27.4
Document Number 81211
Rev. 1.3, 03-Jul-08
www.vishay.com
11
TFDU6103
Vishay Semiconductors
Tape Dimensions in mm
Drawing-No.: 9.700-5251.01-4
Issue: 3; 02.09.05
19824
Figure 8. Tape Drawing, TFDU6103 for Top View Mounting, Tolerance 0.1 mm
www.vishay.com
12
Document Number 81211
Rev. 1.3, 03-Jul-08
TFDU6103
Vishay Semiconductors
Tape Dimensions in mm
19875
Figure 9. Tape Drawing, TFDU6103 for Side View Mounting, Tolerance 0.1 mm
Document Number 81211
Rev. 1.3, 03-Jul-08
www.vishay.com
13
TFDU6103
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,
and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated
with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
14
Document Number 81211
Rev. 1.3, 03-Jul-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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