T85HF80 [VISHAY]
Power Rectifier Diodes (T-Modules), 40 A/70 A/85 A/110 A; 电源整流二极管(T -模块) , 40 A / 70 A / 85 A / 110一个型号: | T85HF80 |
厂家: | VISHAY |
描述: | Power Rectifier Diodes (T-Modules), 40 A/70 A/85 A/110 A |
文件: | 总11页 (文件大小:304K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
T..HF Series
Vishay High Power Products
Power Rectifier Diodes (T-Modules),
40 A/70 A/85 A/110 A
FEATURES
• Electrically isolated base plate
RoHS
• Types up to 1200 VRRM
COMPLIANT
• 3500 VRMS isolating voltage
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL E78996 approved
• RoHS compliant
D-55
• Designed and qualified for industrial level
DESCRIPTION
These series of T-modules use standard recovery power
rectifier diodes. The semiconductors are electrically isolated
from the metal base, allowing common heatsink and
compact assembly to be built.
PRODUCT SUMMARY
IF(AV)
40 to 110 A
Applications include power supplies, battery charges,
welders, motor controls and general industrial current
rectification.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
T40HF
T70HF
70
T85HF
85
T110HF
110
UNITS
40
A
°C
A
IF(AV)
TC
85
85
85
85
IF(RMS)
IFSM
63
110
134
173
50 Hz
60 Hz
50 Hz
60 Hz
570
1200
1250
7100
6450
70 700
1700
1800
14 500
13 500
148 700
2000
A
600
2100
1630
1500
16 300
20 500
18 600
204 300
I2t
A2s
I2√t
VRRM
TJ
A2√s
V
100 to 1200
- 40 to 150
°C
Document Number: 93587
Revision: 12-Jun-08
For technical questions, contact: ind-modules@vishay.com
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1
T..HF Series
Power Rectifier Diodes (T-Modules),
40 A/70 A/85 A/110 A
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM, MAXIMUM REPETITIVE
VRSM, MAXIMUM NON-REPETITIVE
IRRM MAXIMUM
AT TJ = 25 °C
µA
TYPE
NUMBER
VOLTAGE
CODE
PEAK REVERSE VOLTAGE
PEAK REVERSE VOLTAGE
V
V
10
20
100
200
400
600
800
1000
1200
150
300
T40HF..
T70HF..
T85HF..
T110HF..
40
500
100
60
700
80
900
100
120
1100
1300
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
T40HF T70HF T85HF T110HF UNITS
40
85
70
85
110
85
A
°C
A
Maximum average forward current
at case temperature
IF(AV)
180° conduction, half sine wave
85
85
Maximum RMS forward current
IF(RMS)
63
110
134
173
t = 10 ms
570
600
480
500
1630
1500
1150
1050
1200
1250
1000
1050
7100
6450
5000
4570
1700
1800
1450
1500
2000
2100
1700
1780
No voltage
reapplied
Maximum peak, one-cycle
forward, non-repetitive
surge current
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
IFSM
A
100%VRRM
reapplied
Sinusoidal
half wave,
initial TJ =
TJ maximum
14 500 20 500
13 500 18 600
10 500 14 500
No voltage
reapplied
Maximum I2t for fusing
I2t
A2s
100%VRRM
reapplied
9600
13 200
Maximum I2√t for fusing
I2√t
t = 0.1 to 10 ms, no voltage reapplied
16 300 70 700 148 700 204 300 A2√s
Low level value of
threshold voltage
VF(TO)1
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ maximum 0.66
0.76
0.95
2.4
0.68
0.90
1.76
1.08
0.68
0.86
1.56
1.12
V
High level value of
threshold voltage
VF(TO)2
rf1
(I > π x IF(AV)), TJ maximum
0.84
4.3
Low level value of
forward slope resistance
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ maximum
mΩ
High level value of
forward slope resistance
rf2
(I > π x IF(AV)), TJ maximum
IFM = π x IF(AV), TJ = 25 °C,
3.1
1.7
Maximum forward voltage drop
VFM
tp = 400 µs square pulse
Average power = VF(TO) x IF(AV) + rf x (IF(RMS)
1.30
1.35
1.27
1.35
V
2
)
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Document Number: 93587
Revision: 12-Jun-08
T..HF Series
Power Rectifier Diodes (T-Modules),
40 A/70 A/85 A/110 A
Vishay High Power Products
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
T40HF T70HF T85HF T110HF UNITS
Maximum peak reverse
leakage current
IRRM
TJ = 150 °C
15
15
20
20
mA
V
50 Hz, circuit to base, all terminals shorted
TJ = 25 °C, t = 1 s
RMS isolation voltage
VISOL
3500
3500
3500
3500
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
T40HF T70HF T85HF T110HF UNITS
Maximum junction operating
and storage temperature range
TJ, TStg
- 40 to 150
°C
Maximum thermal resistance,
junction to case per junction
RthJC
DC operation
1.36
0.69
0.62
0.47
K/W
Maximum thermal resistance,
case to heatsink
Mounting surface smooth, flat
and greased
RthCS
0.2
1.3 10 %
to heatsink
M3.5 mounting screws (1)
M5 screw terminals
Mounting torque,
Non-lubricated
threads
Nm
g
10 %
terminals
3
10 %
54
Approximate weight
Case style
See dimensions - link at the end of datasheet
T-module
D-55
Note
(1)
A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the
compound
ΔR CONDUCTION PER JUNCTION
SINUSOIDAL CONDUCTION AT TJ MAXIMUM
RECTANGULAR CONDUCTION AT TJ MAXIMUM
DEVICES
UNITS
180°
0.12
0.09
0.08
0.05
120°
0.14
0.11
0.09
0.07
90°
60°
0.27
0.20
0.18
0.14
30°
180°
0.09
0.07
0.06
0.05
120°
0.15
0.11
0.10
0.08
90°
60°
0.28
0.21
0.19
0.15
30°
0.46
0.35
0.31
0.24
T40HF
T70HF
T85HF
T110HF
0.18
0.14
0.12
0.09
0.46
0.35
0.31
0.23
0.20
0.15
0.13
0.10
K/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 93587
Revision: 12-Jun-08
For technical questions, contact: ind-modules@vishay.com
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3
T..HF Series
Power Rectifier Diodes (T-Modules),
40 A/70 A/85 A/110 A
Vishay High Power Products
150
150
T4 0 HF. . Se r i e s
T4 0HF. . Se ri e s
(DC) = 1.36 K/W
R
(DC) = 1.36 K/W
140
130
120
110
100
90
140
130
120
110
100
90
R
thJC
thJC
Conduction Period
Conduction Angle
30°
30°
20
60°
90°
120°
60°
90°
30
80
80
120°
180°
70
70
180°
DC
60
60
0
10
40
50
0
10 20
30
40
50 60
70
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
45
180°
40
35
30
25
20
15
10
5
120°
90°
60°
30°
3
K
/
W
RMS Lim it
Conduction Angle
T40 HF. . Se rie s
T = 150°C
J
0
0
5
10 15 20 25 30 35 400
25
50
75
100 125 150
Maximum Allowable Ambient Temperature (°C)
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
70
60
50
40
30
20
10
0
DC
180°
120°
90°
1
5
K
/
W
W
1
.
60°
30°
K
/
RM S Limit
Conduction Period
T40HF.. Series
T = 150°C
J
0
10
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
20 30 40
50 60 700
25
50
75
100 125 150
Maximum Allowable Ambient Temperature (°C)
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Document Number: 93587
Revision: 12-Jun-08
T..HF Series
Power Rectifier Diodes (T-Modules),
40 A/70 A/85 A/110 A
Vishay High Power Products
150
550
500
450
400
350
300
250
200
150
At Any Rated Load Condition And With
T70 HF. . Se r i e s
(DC) = 0.69 K/W
140
130
120
110
100
90
Rated V
RRM
Applied Following Surge.
R
thJC
Initial T = 150°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Conduction Angle
30°
60°
90°
80
120°
180°
T40 HF. . Se r ie s
70
60
0
10 20 30 40 50 60 70 80
Average Forward Current (A)
1
10
100
NumberOf Equal Amplitude Half Cycle Current Pulses(N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 7 - Current Ratings Characteristics
150
140
130
120
110
100
90
600
Maximum Non Repetitive Surge Current
T70 HF. . Se ri e s
thJC
550
500
450
400
350
300
250
200
150
100
VersusPulse Train Duration.
R
(DC) = 0.69 K/W
Initial T = 150°C
J
No Voltage Reapplied
Ra t e d V
Re a p p lie d
RRM
Conduction Period
30°
60°
80
90°
120°
T4 0 HF. . Se r i e s
70
180°
DC
60
0
20
40
60
80
100 120
0.01
0.1
Pulse Tra in Dura tion (s)
1
Average Forward Current (A)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 8 - Current Ratings Characteristics
90
0
180°
.
5
t
h
K
80
S
120°
/
A
W
90°
70
60
50
40
30
20
10
0
60°
30°
2
RMS Lim it
K
/
W
Conduction Angle
T7 0 HF. . Se ri e s
7
K
/
W
T = 150°C
J
0
10 20 30
40
50
60
700
25
50
75
100 125 150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - Forward Power Loss Characteristics
Document Number: 93587
Revision: 12-Jun-08
For technical questions, contact: ind-modules@vishay.com
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5
T..HF Series
Power Rectifier Diodes (T-Modules),
40 A/70 A/85 A/110 A
Vishay High Power Products
120
DC
180°
0
100
.
120°
5
K
/
W
90°
60°
80
30°
1
K/
W
W
60
RMS Lim it
2
K
/
Conduction Period
T7 0 HF. . Se ri e s
40
20
0
T = 15 0 ° C
J
0
20
Average Forward Current (A)
Fig. 10 - Forward Power Loss Characteristics
40
60
80
100 120
25
50
75
100 125 150
Maximum Allowable Ambient Temperature (°C)
150
140
130
120
110
100
90
1100
1000
900
800
700
600
500
400
300
T8 5 HF. . Se ri e s
At Any Rated Load Condition And With
R
(DC) = 0.62 K/W
Rated V
Applied Following Surge.
RRM
thJC
Initial T = 150°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Conduction Angle
30°
60°
90°
120°
180°
T70 HF. . Series
80
0
10 20 30 40 50 60 70 80 90
Average Forward Current (A)
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 11 - Maximum Non-Repetitive Surge Current
Fig. 13 - Current Ratings Characteristics
150
1200
Maximum Non Repetitive Surge Current
T85 HF. . Se ri e s
thJC
1100
1000
900
800
700
600
500
400
300
200
VersusPulse Train Duration.
140
130
120
110
100
90
R
(DC) = 0.62 K/W
Initial T = 150°C
J
No Voltage Reapplied
Rated V
Reapplied
RRM
Conduction Period
30°
60°
80
90°
120°
T70 HF. . Se r i e s
70
180°
80 100 120 140
Average Forward Current (A)
Fig. 14 - Current Ratings Characteristics
DC
60
0
20
40 60
0.01
0.1
Pulse Train Duration (s)
Fig. 12 - Maximum Non-Repetitive Surge Current
1
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93587
Revision: 12-Jun-08
T..HF Series
Power Rectifier Diodes (T-Modules),
40 A/70 A/85 A/110 A
Vishay High Power Products
100
90
80
70
60
50
40
30
20
10
0
180°
120°
90°
t
h
S
A
60°
30°
1
.
5
K
/
W
RM S Limit
Conduction Angle
T8 5 HF. . Se ri e s
5
7
K
/
W
W
K
/
T = 1 5 0 ° C
J
0
10 20 30 40 50 60 70 80 90
Average Forward Current (A)
25
50
75
100 125 150
Maximum Allowable Ambient Temperature (°C)
Fig. 15 - Forward Power Loss Characteristics
140
120
100
80
DC
180°
120°
90°
R
0
.
=
3
K
0
.
/
2
W
0
.
K
/
5
K
W
/
60°
W
-
D
0
.
7
30°
e
K
l
t
/
a
W
R
1
.
5
60
K
RMS Limit
/
W
2
K
Conduction Period
T85HF. . Se ri e s
/
W
40
20
T = 150°C
J
0
0
20
40
60
80 100 120 1400
25
50
75
100 125 150
Maximum Allowable Ambient Temperature (°C)
Fig. 16 - Forward Power Loss Characteristics
Average Forward Current (A)
1800
1600
1400
1200
1000
800
1600
1400
1200
1000
800
Maximum Non Repetitive Surge Current
VersusPulse Train Duration.
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
Initial T = 150°C
Initial T = 150°C
J
J
No Voltage Reapplied
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Rated V
Reapplied
RRM
600
600
T8 5 HF. . Se r ie s
T85HF. . Se ri e s
400
400
0.01
0.1
Pulse Train Duration (s)
Fig. 18 - Maximum Non-Repetitive Surge Current
1
1
10
100
NumberOf Equal Amplitude Half Cycle Current Pulses(N)
Fig. 17 - Maximum Non-Repetitive Surge Current
Document Number: 93587
Revision: 12-Jun-08
For technical questions, contact: ind-modules@vishay.com
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T..HF Series
Power Rectifier Diodes (T-Modules),
40 A/70 A/85 A/110 A
Vishay High Power Products
150
150
T1 10 HF. . Series
thJC
T1 1 0HF. . Se r i e s
R
(DC) = 0.47 K/W
R
(DC ) = 0. 47 K/ W
140
130
120
110
100
90
140
130
120
110
100
90
thJC
Conduction Angle
Conduction Period
30°
30°
60°
60°
90°
120°
90°
80
80
120°
180°
70
70
180°
DC
60
60
0
20 40 60 80 100 120 140 160 180
Average Forward Current (A)
0
20
40
60
80
100 120
Average Forward Current (A)
Fig. 20 - Current Ratings Characteristics
Fig. 19 - Current Ratings Characteristics
130
120
180°
R
t
0
0
.
5
.
h
3
120°
K
/
S
A
K
W
/
110
90°
=
W
0
.
7
0
K
.
2
/
100
60°
W
K
/
W
30°
90
80
70
60
50
40
30
20
10
0
-
D
e
l
t
a
R
RM S Lim it
Conduction Angle
T11 0 HF. . Series
T = 1 5 0° C
J
0
20
Average Forward Current (A)
Fig. 21 - Forward Power Loss Characteristics
40
60
80
100 120
25
50
75
100 125 150
Maximum Allowable Ambient Temperature (°C)
180
160
140
120
100
80
DC
t
h
180°
120°
90°
S
A
0
.
3
K
/
W
60°
30°
RM S Lim it
1
.
5
K
/
W
Conduction Period
T11 0HF. . Series
60
40
T = 150°C
20
J
0
0
20 40 60 80 100 120 140 160 1080
25
50
75
100 125 150
Maximum Allowable Ambient Temperature (°C)
Average Forward Current (A)
Fig. 22 - Forward Power Loss Characteristics
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Document Number: 93587
Revision: 12-Jun-08
T..HF Series
Power Rectifier Diodes (T-Modules),
40 A/70 A/85 A/110 A
Vishay High Power Products
1800
1600
1400
1200
1000
800
1000
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Initial T = 150°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
100
10
1
T = 25°C
J
T = 1 5 0° C
J
600
T11 0HF. . Se ri e s
T7 0HF. . Se r i e s
400
0
0.5
1
1.5
2
2.5
3
1
10
100
InstantaneousForward Voltage (V)
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 23 - Maximum Non-Repetitive Surge Current
Fig. 26 - Forward Voltage Drop Characteristics
2000
10000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
1800
Initial T = 150°C
J
No Voltage Reapplied
1600
1400
1200
1000
800
Ra t e d V
Re a p p lied
RRM
1000
T = 2 5 ° C
J
100
10
T = 150°C
J
600
T11 0HF. . Se ri e s
T85HF. . Se rie s
400
0.01
0.1
Pulse Train Duration (s)
1
0
1
2
3
4
5
InstantaneousForward Voltage (V)
Fig. 24 - Maximum Non-Repetitive Surge Current
Fig. 27 - Forward Voltage Drop Characteristics
1000
10000
1000
100
T = 25°C
J
T = 2 5 ° C
J
T = 1 50°C
J
10
1
100
T = 1 5 0° C
J
T1 1 0HF. . Se r ie s
T4 0 HF. . Se rie s
10
0
0.5
InstantaneousForward Voltage (V)
Fig. 28 - Forward Voltage Drop Characteristics
1 1.5 2 2.5 3 3.5 4 4.5 5
0
0.5
InstantaneousForward Voltage (V)
Fig. 25 - Forward Voltage Drop Characteristics
1
1.5
2
2.5
3
3.5
4
Document Number: 93587
Revision: 12-Jun-08
For technical questions, contact: ind-modules@vishay.com
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T..HF Series
Power Rectifier Diodes (T-Modules),
40 A/70 A/85 A/110 A
Vishay High Power Products
10
St e a d y St a t e V a l u e :
T4 0 HF. . Se r i e s
T70 HF. . Series
R
= 1.36 K/W
= 0.69 K/W
= 0.62 K/W
= 0.47 K/W
thJC
R
thJC
R
thJC
1
0.1
R
thJC
(DC Operation)
T85HF. . Se rie s
T1 10 HF. . Se ri e s
0.01
0.0001
0.001
0.01
Square Wave Pulse Duration (s)
Fig. 29 - Thermal Impedance ZthJC Characteristics
0.1
1
10
100
ORDERING INFORMATION TABLE
Device code
T
110 HF 120
1
2
3
4
1
2
3
4
-
-
-
-
Module type
Current rating
Circuit configuration
Voltage code x 10 = VRRM
CIRCUIT CONFIGURATION
+
-
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95313
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Document Number: 93587
Revision: 12-Jun-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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相关型号:
T85HFL100S10PBF
Rectifier Diode, 1 Phase, 1 Element, 85A, 1000V V(RRM), Silicon, D-56, 2 PIN
INFINEON
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