T85HFL100S05 [VISHAY]
Fast Recovery Diodes, 40/70/85 A (T-Modules); 快恢复二极管， 40/70/85 A（ T-模块）
| 型号： | T85HFL100S05 |
| 厂家： | 
VISHAY |
| 描述： | Fast Recovery Diodes, 40/70/85 A (T-Modules) |
| 文件： | 总15页 (文件大小：409K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
T..HFL Series
Vishay High Power Products
Fast Recovery Diodes,
40/70/85 A (T-Modules)
FEATURES
• Fast recovery time characteristics
RoHS
• Electrically isolated base plate
• 3500 VRMS isolating voltage
• Standard JEDEC package
COMPLIANT
• Simplified mechanical designs, rapid assembly
• Large creepage distances
• UL E78996 approved
D-55
• RoHS compliant
• Designed and qualified for industrial level
DESCRIPTION
The series of T-modules uses fast recovery power diodes in
a single diode configuration. The semiconductors are
electrically isolated from the metal base, allowing common
heatsink and compact assemblies to be built.
PRODUCT SUMMARY
IF(AV)
40/70/85 A
These single diode modules can be used in conjunction with
the thyristor modules as a freewheel diode. Application
includes self-commutated inverters, DC choppers, motor
control, inductive heating and electronic welders. These
modules are intended for those applications where very fast
recovery characteristics are required and for general power
switching applications.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
T40HFL
T70HFL
70
T85HFL
85
UNITS
IF(AV)
40
A
A
IF(RMS)
63
110
133
50 Hz
475
830
1300
1370
8550
7810
IFSM
A
60 Hz
50 Hz
60 Hz
Range
Range
Range
500
870
1130
1030
3460
I2t
A2s
3160
VRRM
trr
100 to 1000
200 to 1000
- 40 to 125
V
ns
°C
TJ
Document Number: 93184
Revision: 13-Feb-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
T..HFL Series
Fast Recovery Diodes,
40/70/85 A (T-Modules)
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
V
RRM, MAXIMUM REPETITIVE
I
RRM MAXIMUM
AT TJ = 25 °C
µA
VOLTAGE
CODE
trr
CODE
TYPE NUMBER
PEAK REVERSE VOLTAGE
V
10
20
S02, S05, S10
S02, S05, S10
S02, S05, S10
S02, S05, S10
S05, S10
100
200
400
600
800
1000
150
300
500
700
900
1100
T40HFL..
T70HFL..
T85HFL..
40
100
60
80
100
S05, S10
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
T40HFL T70HFL T85HFL UNITS
40
70
70
85
A
°C
A
Maximum average forward current
at case temperature
IF(AV)
180° conduction, half sine wave
Maximum RMS forward current
IF(RMS)
63
475
500
400
420
1130
1030
800
730
110
830
133
No
voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
1300
1370
1100
1150
8550
7810
6050
5520
870
700
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
A
100 %
VRRM
reapplied
730
Sinusoidal half wave,
initial TJ = TJ maximum
No
voltage
reapplied
3460
3160
2450
2230
Maximum I2t for fusing
I2t
A2s
100 %
VRRM
reapplied
Maximum I2√t for fusing
I2√t
t = 0.1 to 10 ms, no voltage reapplied
11 300
0.82
34 600
0.87
85 500
0.84
A2√s
Low level value of threshold voltage VF(TO)1
High level value of threshold voltage VF(TO)2
TJ = 25 °C, (16.7 % x π x IF(AV) < I < π x IF(AV)
)
)
V
TJ = 25 °C, (I > π x IF(AV)
TJ = 25 °C, (16.7 % x π x IF(AV) < I < π x IF(AV)
TJ = 25 °C, (I > π x IF(AV)
)
0.84
0.90
0.86
Low level value of forward
slope resistance
rf1
7.0
6.8
2.77
2.67
1.73
2.15
2.07
1.55
mΩ
High level value of forward
slope resistance
rf2
)
IFM = π x IF(AV), TJ = 25 °C, tp = 400 µs square wave
Average power = VF(TO) x IF(AV) + rf x (IF(RMS)
Maximum forward voltage drop
VFM
1.60
V
2
)
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93184
Revision: 13-Feb-08
T..HFL Series
Fast Recovery Diodes,
40/70/85 A (T-Modules)
Vishay High Power Products
REVERSE RECOVERY CHARACTERISTICS
T40HFL
S05
T70HFL
S05
T85HFL
S05
PARAMETER
SYMBOL
TEST CONDITIONS (1)
UNITS
S02
S10
S02
S10
S02
S10
TJ = 25 °C, -dIF/dt = 100 A/µs
IF = 1 A to VR = 30 V
70
110
270
70
110
270
80
120
290
Maximum reverse
recovery time
trr
ns
TJ = 25 °C, -dIF/dt = 25 A/µs
200
0.25
0.55
500 1000 200
500 1000 200
500 1000
I
FM = π x rated IF(AV), VR = - 30 V
TJ = 25 °C, -dIF/dt = 100 A/µs
IF = 1 A to VR = 30 V
0.4
2.0
1.35 0.25
8.0 0.6
0.4
2.1
1.35
8.5
0.3
0.8
0.6
3.5
1.6
1.5
Maximum reverse
recovery charge
Qrr
µC
TJ = 25 °C, -dIF/dt = 25 A/µs
IFM = π x rated IF(AV), VR = - 30 V
Note
(1)
Tested on LEM 300 A diodemeter tester
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
TJ = 125 °C
T40HFL T70HFL T85HFL UNITS
Maximum peak reverse leakage current
IRRM
20
mA
V
50 Hz, circuit to base, all terminals
shorted, TJ = 25 °C, t = 1 s
RMS isolation voltage
VISOL
3500
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
T40HFL T70HFL T85HFL UNITS
Junction operating temperature range
Storage temperature range
TJ
- 40 to 125
°C
TStg
- 40 to 150
Maximum internal thermal resistance,
junction to case per module
RthJC
RthCS
DC operation
0.85
0.53
0.2
0.46
K/W
Nm
Thermal resistance,
case to heatsink per module
Mounting surface, flat, smooth
and greased
M3.5 mounting screws (1)
base to heatsink
busbar to terminal
1.3 10 %
Non-lubricated threads
Mounting torque 10 %
M5 screws terminals
Non-lubricated threads
3
10 %
54
19
g
See dimensions -
link at the end of datasheet
Approximate weight
Case style
oz.
T-module
D-55
Note
(1)
A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of
the compound
ΔR CONDUCTION
SINUSOIDAL CONDUCTION AT TJ MAXIMUM
RECTANGULAR CONDUCTION AT TJ MAXIMUM
DEVICES
UNITS
180°
0.06
0.05
0.04
120°
0.08
0.06
0.05
90°
0.10
0.08
0.06
60°
0.14
0.11
0.09
30°
0.24
0.19
0.15
180°
0.05
0.04
0.03
120°
0.08
0.06
0.05
90°
0.10
0.08
0.07
60°
0.15
0.12
0.09
30°
0.24
0.19
0.015
T40HFL
T70HFL
T85HFL
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 93184
Revision: 13-Feb-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
T..HFL Series
Fast Recovery Diodes,
40/70/85 A (T-Modules)
Vishay High Power Products
130
130
T4 0HFL. . Se r i e s
thJC
T7 0HFL. . Se ri e s
(DC) = 0.53 K/W
R
(DC) = 0.85 K/W
R
120
110
100
90
120
110
100
90
thJC
Conduction Period
Conduction Angle
80
80
30°
30°
20
70
60°
70
60°
90°
30
90°
120°
120°
180°
60
60
180°
80
DC
50
50
0
10
40
50
0
20
40
60
100 120
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
130
120
110
100
90
130
120
110
100
90
T8 5HFL. . Se ri e s
T4 0 HFL. . Se ri e s
thJC
R
(DC) = 0.46 K/W
R
(DC) = 0.85 K/W
thJC
Conduction Angle
Conduction Period
80
80
30°
30°
60°
60°
70
70
90°
120°
180°
90°
120°
180°
60
60
DC
60
50
50
0
10 20
30 40
50
70
0
10 20 30 40 50 60 70 80 90
Average Forward Current (A)
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Current Ratings Characteristics
130
120
110
100
90
130
120
110
100
90
T7 0 HFL. . Se ri e s
T8 5HFL. . Se ri e s
R
(DC) = 0.53 K/W
R
(DC ) = 0.46 K/ W
thJC
thJC
Conduction Angle
Conduction Period
80
80
30°
40
60°
30°
70
70
60°
90°
90°
120°
120°
180°
60
60
180°
DC
50
50
0
10 20 30 40 50 60 70 80
Average Forward Current (A)
0
20
60 80 100 120 140
Average Forward Current (A)
Fig. 6 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93184
Revision: 13-Feb-08
T..HFL Series
Fast Recovery Diodes,
40/70/85 A (T-Modules)
Vishay High Power Products
70
60
50
40
30
20
10
0
140
180°
120°
90°
DC
180°
120°
90°
120
100
80
60
40
20
0
60°
30°
60°
30°
RMS Limit
RMS Lim it
Conduction Period
Conduction Angle
T4 0 HFL. . Se ri e s
T70HFL.. Series
T = 1 2 5 ° C
T = 12 5 ° C
J
J
0
20
40
60
80
100 120
0
5
10 15 20 25 30 35 40
Average Forward Current (A)
Average Forward Current (A)
Fig. 7 - Forward Power Loss Characteristics
Fig. 10 - Forward Power Loss Characteristics
90
110
DC
180°
100
80
70
60
50
40
30
20
10
0
180°
120°
90°
120°
90°
60°
30°
90
80
70
60
50
40
30
20
10
0
60°
30°
RMS Lim it
RMS Limit
Conduction Period
T40 HFL. . Se r i e s
Conduction Angle
T85HFL.. Series
T = 125°C
T = 125°C
J
J
0
10
20
30 40
50
60
70
0
10 20 30 40 50 60 70 80 90
Average Forward Current (A)
Average Forward Current (A)
Fig. 8 - Forward Power Loss Characteristics
Fig. 11 - Forward Power Loss Characteristics
100
160
DC
180°
90
80
70
60
50
40
30
20
10
0
120°
90°
60°
30°
180°
120°
90°
140
120
100
80
60°
30°
RMS Lim it
RMS Lim it
60
Conduction Period
T85HFL.. Series
Conduction Angle
T7 0HFL. . Se r i e s
40
T = 125 ° C
20
J
T = 125°C
J
0
0
20
40 60 80 100 120 140
0
10
20
30 40
50
60
70
Average Forward Current (A)
Average Forward Current (A)
Fig. 12 - Forward Power Loss Characteristics
Fig. 9 - Forward Power Loss Characteristics
Document Number: 93184
Revision: 13-Feb-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
T..HFL Series
Fast Recovery Diodes,
40/70/85 A (T-Modules)
Vishay High Power Products
450
850
750
650
550
450
350
250
150
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
VersusPulse Train Duration.
Ra t e d V
Ap p lie d Fo llo w ing Surg e .
RRM
400
350
300
250
200
150
100
Initial T = 125°C
Initial T = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
J
No Voltage Reapplied
Rated V
Reapplied
RRM
T70HFL.. Se rie s
T4 0 HFL. . Se rie s
0.01
0.1
Pulse Train Duration (s)
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 13 - Maximum Non-Repetitive Surge Current
Fig. 16 - Maximum Non-Repetitive Surge Current
500
1200
Maximum Non Repetitive Surge Current
At Any Rated Load Condition And With
VersusPulse Train Duration.
Rated V
Applied Following Surge.
1100
1000
900
800
700
600
500
400
300
RRM
450
Initial T = 125°C
J
Initial T = 125°C
J
No Voltage Reapplied
@60 Hz 0.0083 s
@50 Hz 0.0100 s
400
350
300
250
200
150
100
Ra t e d V
Re a p p l i e d
RRM
T40HFL. . Se rie s
T85HFL.. Series
0.01
0.1
Pulse Train Duration (s)
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 17 - Maximum Non-Repetitive Surge Current
800
1300
Maximum Non Repetitive Surge Current
At Any Rated Load Condition And With
1200
1100
1000
900
800
700
600
500
400
300
VersusPulse Train Duration.
Rated V
Applied Following Surge.
RRM
700
600
500
400
300
200
Initial T = 125°C
Initial T = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
J
J
No Voltage Reapplied
Rated V
Reapplied
RRM
T70HFL.. Series
T8 5 HFL. . Se r i e s
1
10
100
0.01
0.1
Pulse Train Duration (s)
1
NumberOf Equal Amplitude Half Cycle Current Pulses(N)
Fig. 15 - Maximum Non-Repetitive Surge Current
Fig. 18 - Maximum Non-Repetitive Surge Current
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93184
Revision: 13-Feb-08
T..HFL Series
Fast Recovery Diodes,
40/70/85 A (T-Modules)
Vishay High Power Products
0.51
0.5
1.1
1
I
= 300A
FM
I
= 300A
FM
0.49
0.48
0.47
0.46
0.45
220A
172A
0.9
0.8
0.7
0.6
220A
172A
100A
100A
50A
50A
T40HFL. . S02
T70HFL. . S02
J
T40HFL. . S05
T70HFL. . S05
J
T = 125 ° C
T = 125 ° C
10
100
10
100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 19 - Recovery Time Characteristics
Fig. 22 - Recovery Time Characteristics
8
20
I
= 300A
FM
220A
172A
100A
50A
I
= 300A
220A
172A
100A
50A
FM
18
16
14
12
10
8
7
6
5
4
3
2
1
T40HFL. . S02
T70HFL. . S02
J
T40HFL. . S05
T70HFL. . S05
6
T = 125 ° C
T = 125 ° C
J
4
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 20 - Recovery Charge Characteristics
Fig. 23 - Recovery Charge Characteristics
20
28
I
= 300A
FM
26
24
22
20
18
16
14
12
10
8
I
= 300A
FM
220A
172A
100A
50A
18
16
14
12
10
8
220A
172A
100A
50A
T40HFL. . S02
T70HFL. . S02
J
T4 0 HFL. . S0 5
T7 0 HFL. . S0 5
6
T = 125 ° C
T = 125 °C
J
4
6
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 21 - Recovery Current Characteristics
Fig. 24 - Recovery Current Characteristics
Document Number: 93184
Revision: 13-Feb-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
7
T..HFL Series
Fast Recovery Diodes,
40/70/85 A (T-Modules)
Vishay High Power Products
1.8
1.7
1.2
1.1
1
I
= 300A
FM
1.6
1.5
1.4
1.3
1.2
1.1
1
200A
100A
50A
I
= 300A
FM
0.9
0.8
0.7
0.6
200A
100A
50A
T4 0 HFL. . S1 0
T7 0 HFL. . S1 0
J
T85HFL. . S02
T = 125°C
J
T = 125 °C
10
100
10
100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 25 - Recovery Time Characteristics
Fig. 28 - Recovery Time Characteristics
40
25
I
= 300A
FM
I
= 300A
200A
100A
50A
FM
35
30
25
20
15
10
5
200A
100A
20
15
10
5
50A
T40HFL. . S10
T70HFL. . S10
T = 125 ° C
T85HFL. . S02
T = 125 ° C
J
J
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 26 - Recovery Charge Characteristics
Fig. 29 - Recovery Charge Characteristics
45
28
I
= 300A
FM
I
= 300A
200A
100A
50A
FM
26
24
22
20
18
16
14
12
10
8
200A
100A
50A
40
35
30
25
20
15
10
T40HFL. . S10
T70HFL. . S10
T = 125 ° C
T85HFL. . S02
T = 125°C
J
J
6
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 27 - Recovery Current Characteristics
Ra t e O f Fa ll O f Fo rw a rd C urre n t - d i/ d t ( A / µs)
Fig. 30 - Recovery Current Characteristics
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Document Number: 93184
Revision: 13-Feb-08
T..HFL Series
Fast Recovery Diodes,
40/70/85 A (T-Modules)
Vishay High Power Products
1.3
1.2
1.1
1
2
1.9
1.8
I
= 300A
FM
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
I
= 300A
FM
200A
100A
200A
100A
50A
0.9
0.8
50A
T85HFL. . S05
J
T85HFL. . S10
J
T = 125° C
T = 125°C
10
100
10
100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 31 - Recovery Time Characteristics
Fig. 34 - Recovery Time Characteristics
30
55
I
= 300A
200A
I
= 300A
FM
FM
50
45
40
35
30
25
20
15
10
27
24
21
18
15
12
9
200A
100A
100A
50A
50A
T85HFL. . S10
T = 125°C
T85HFL. . S05
T = 125°C
J
J
6
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Ra te O f Fa ll O f Fo rw a rd C u rre n t - d i/ d t ( A / µs)
Fig. 32 - Recovery Charge Characteristics
Fig. 35 - Recovery Charge Characteristics
35
60
I
= 300A
I
= 300A
FM
FM
55
50
45
40
35
30
25
20
15
200A
100A
50A
200A
30
25
20
15
10
100A
50A
T85HFL. . S05
T = 125°C
T8 5 HFL. . S10
T = 125°C
J
J
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Ra t e O f Fa ll O f Fo rw a rd C u rre n t - d i/ d t ( A/ µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 33 - Recovery Current Characteristics
Fig. 36 - Recovery Current Characteristics
Document Number: 93184
Revision: 13-Feb-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
9
T..HFL Series
Fast Recovery Diodes,
40/70/85 A (T-Modules)
Vishay High Power Products
1E4
1E3
T40HFL. . Series
Tr a p e zo id a l Pu lse
T C = 70 ° C
tp
1000
20000
tp
2500
1500
10000
50 Hz
5000
400
200
1E2
1E1
5000 2500
400
50 Hz
200
1000
1500
T4 0 HFL.. Se r ie s
Sin u so id a l Pu lse
T = 70°C
C
1E1
1E41
1E1
1E2
1E3
1E2
1E3
1E4
Pu lse Ba se w id t h (µs)
Pulse Basewidth (µs)
Fig. 37 - Frequency Characteristics
1E4
1E3
1E2
1E1
T40HFL. .
Tra p e zo id a l Pu l se
T = 90 ° C
tp
C
20000 10000
200
5000 2500 1500 1000
400
50 Hz
1500
400
200
50 Hz
2500
1000
5000
T40HFL.. Series
Sin u so id a l Pu lse
T = 90°C
tp
C
1E1
1E4
1E1
1E2
1E3
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Ba sew id th (µs)
Fig. 38 - Frequency Characteristics
1E4
1E3
1E2
1E1
1E0
20 joulesper pulse
10
20 joulesper pulse
4
10
2
1
4
2
0.4
1
0.2
0.1
0.4
0.2
0.1
0.04
0.02
0.04
0.02
0.01
0.01
T40HFL.. Series
T40HFL.. Series
Sinusoidal Pulse
Tra p e zo id a l Pu lse
T = 125°C
di/dt = 50A/µs
J
T = 125 °C
tp
tp
J
1E1
1E2
1E3
1E4
1
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Ba se w id t h ( µs)
Fig. 39 - Maximum Forward Energy Power Loss Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93184
Revision: 13-Feb-08
T..HFL Series
Fast Recovery Diodes,
40/70/85 A (T-Modules)
Vishay High Power Products
1E4
1E3
1E2
1E1
5000
20000 10000
1500 1000
2500
50 Hz
400 200
5000
1500
400
1000
200
2500
50 Hz
T70 HFL. . Se r ie s
T70HFL.. Series
Sinusoidal Pulse
Tra p e zo id a l Pu lse
T = 70° C
T = 70°C
tp
tp
C
C
1E1
1E4
1E2
1E3
1E4
1E1
1E2
1E3
Pu lse Ba se w id t h (µs)
Pulse Ba se wid t h (µs)
Fig. 40 - Frequency Characteristics
1E4
1E3
1E2
1E1
10000 5000
20000
tp
2500
1500 1000
400
200
50 Hz
2500
5000
1000
1500
400
50 Hz
200
T7 0HFL. . Se r ie s
Tra p e zo id a l Pu lse
T7 0 HFL. . Se rie s
Sinusoidal Pulse
T = 90°C
T = 90°C
tp
C
C
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Ba se w id t h (µs)
Pulse Ba se w id t h (µs)
Fig. 41 - Frequency Characteristics
1E4
1E3
1E2
1E1
1E0
20 joulesper pulse
10
20 joulesper pulse
10
4
4
2
1
2
1
0.4
0.4
0.2
0.2
0.1
0.1
0.04
0.04
0.02
0.01
0.02
0.01
T7 0 HFL. . Se r ie s
Sin u so id a l Pu lse
T7 0 HFL. . Se r ie s
Trapezoidal pulse
tp
T = 125°C
J
T = 125°C
J
tp
di/dt = 50A/µs
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pu lse Ba se w id t h (µs)
Pulse Basewidth (µs)
Fig. 42 - Maximum Forward Energy Power Loss Characteristics
Document Number: 93184
Revision: 13-Feb-08
For technical questions, contact: ind-modules@vishay.com
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11
T..HFL Series
Fast Recovery Diodes,
40/70/85 A (T-Modules)
Vishay High Power Products
1E4
1E3
20000
10000
5000
400
50 Hz
2500 1500
200
1000
5000 2500
1500 1000
400
200
50 Hz
1E2
T85HFL.. Series
T85HFL.. Series
Sin u so id a l Pu lse
C
Tr a p e zo id a l Pu lse
T = 70°C
tp
C
T = 70°C
tp
1E1
1E1
1E2
1E3
1E4
1E11E1
1E2
1E3
1E4
Pu lse Ba se w id t h (µs)
Pulse Ba sewidt h (µs)
Fig. 43 - Frequency Characteristics
1E4
1E3
1E2
1E1
400
200
1000
5000 2500 1500
50 Hz
20000 10000
1500
5000
1000
2500
400
200
50 Hz
T85HFL.. Series
T85HFL.. Series
Trapezoidal Pulse
Sinusoidal Pulse
T = 90°C
tp
C
T = 90°C
tp
C
1E1
1E2
1E3
1E41E1
1E2
1E3
1E4
Pulse Ba se w id t h (µs)
Pulse Ba se w id t h (µs)
Fig. 44 - Frequency Characteristics
1E4
1E3
1E2
1E1
1E0
20 joulesper pulse
10
20 joulesper pulse
4
10
4
2
2
1
0.4
0.2
1
0.4
0.2
0.1
0.1
0.04
0.04
0.02
0.01
0.02
0.01
T8 5 HFL. . Se rie s
T85HFL.. Series
Trapezoidal Pulse
Sin u so id a l Pu lse
T = 125°C
J
T = 125 °C
tp
tp
J
di/dt = 50A/µs
1E4
1E1
1E1
1E2
1E3
1E2
1E3
1E4
Pulse Ba se w id t h (µs)
Pulse Basewidth (µs)
Fig. 45 - Maximum Forward Energy Power Loss Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93184
Revision: 13-Feb-08
T..HFL Series
Fast Recovery Diodes,
40/70/85 A (T-Modules)
Vishay High Power Products
1000
100
10
10000
1000
100
10
T = 25°C
J
T = 25 °C
J
T = 1 2 5° C
J
T = 1 2 5° C
J
T4 0HFL. . Se r ie s
T7 0 HFL. . Se rie s
1
0.5
1
1
1.5
2
2.5
3
3.5
4
4.5
0
1
2
3
4
5
6
7
InstantaneousForward Voltage (V)
InstantaneousForward Voltage (V)
Fig. 46 - Forward Voltage Drop Characteristics
Fig. 47 - Forward Voltage Drop Characteristics
10000
1000
100
10
T = 25° C
J
T = 1 2 5 ° C
J
T8 5HFL. . Se rie s
0
1
2
3
4
5
6
7
InstantaneousForward Voltage (V)
Fig. 48 - Forward Voltage Drop Characteristics
1
0.1
St e a d y St a t e V a lu e :
T4 0 HFL. . Se ri e s
T7 0 HFL. . Se ri e s
T8 5 HFL. . Se ri e s
R
R
R
= 0.85 K/W
= 0.53 K/W
= 0.46 K/W
thJC
thJC
thJC
(DC Operation)
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 49 - Thermal Impedance ZthJC Characteristics
Document Number: 93184
Revision: 13-Feb-08
For technical questions, contact: ind-modules@vishay.com
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13
T..HFL Series
Fast Recovery Diodes,
40/70/85 A (T-Modules)
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
T
40 HFL 100 S10
1
2
3
4
5
1
2
3
4
5
-
-
-
-
-
Module type
40 = 40 A (average)
70 = 70 A (average)
85 = 85 A (average)
Current rating
Fast recovery diode
Voltage code x 10 = VRRM
trr code
S02 = 200 ns
S05 = 500 ns
S10 = 1000 ns
CIRCUIT CONFIGURATION
+
-
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95313
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93184
Revision: 13-Feb-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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相关型号：
T85HFL100S10PBF
Rectifier Diode, 1 Phase, 1 Element, 85A, 1000V V(RRM), Silicon, D-56, 2 PIN
INFINEON
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