SUD70N03-04P [VISHAY]
N-Channel 30-V (D-S) 175C MOSFET; N通道30 -V （D -S ） 175C MOSFET
| 型号： | SUD70N03-04P |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30-V (D-S) 175C MOSFET |
| 文件： | 总4页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUD70N03-04P
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
FEATURES
D TrenchFETr Power MOSFET
PRODUCT SUMMARY
D 175_C Junction Temperature
D Optimized for Low-Side Synchronous
Rectifier Operation
VDS (V)
rDS(on) (W)
ID (A)a
0.0043 @ V = 10 V
33
27
GS
D 100% Rg Tested
APPLICATIONS
30
0.0065 @ V = 4.5 V
GS
D DC/DC Converters
D Synchronous Rectifiers
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
S
N-Channel MOSFET
Ordering Information: SUD70N03-04P
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
"20
33
DS
GS
V
V
T
= 25_C
= 25_C
A
a
Continuous Drain Current
I
D
b
T
70
C
A
Pulsed Drain Current
I
100
DM
a
a
Continuous Source Current (Diode Conduction)
I
S
8.3
T
= 25_C
= 25_C
88
C
Maximum Power Dissipation
P
D
W
a
T
8.3
A
Operating Junction and Storage Temperature Range
T , T
−55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
15
40
18
50
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
Steady State
_C/W
Maximum Junction-to-Case
1.2
1.5
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package.
Document Number: 72237
S-40841—Rev. B, 03-May-04
www.vishay.com
1
SUD70N03-04P
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
V
= 0 V, I = 250 mA
D
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
30
GS
(BR)DSS
V
V
V
DS
= V , I = 250 mA
1.0
3.0
"100
1
GS(th)
GS
D
V
DS
= 0 V, V = "20 V
GS
I
nA
GSS
V
= 30 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 30 V, V = 0 V, T = 125_C
50
DS
GS
J
b
On-State Drain Current
I
V
= 5 V, V = 10 V
50
20
A
D(on)
DS
GS
V
= 10 V, I = 20 A
0.0035
0.0051
0.0043
0.007
GS
D
b
V
= 10 V, I = 20 A, T = 125_C
Drain-Source On-State Resistance
r
W
GS
D
J
DS(on)
V
= 4.5 V, I = 20 A
0.0065
GS
D
b
Forward Transconductance
g
fs
V
= 15 V, I = 20 A
S
DS
D
Dynamica
Input Capacitance
C
C
5100
860
430
1.0
90
iss
V
GS
= 0 V, V = 25 V, f = 1 MHz
DS
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
pF
W
oss
C
rss
f = 1 MHz
R
0.5
1.5
g
c
Total Gate Charge
Q
135
g
c
Gate-Source Charge
Q
Q
18
V
DS
= 15 V, V = 10 V, I = 50 A
nC
gs
gd
GS
D
c
Gate-Drain Charge
16
c
Turn-On Delay Time
t
12
20
20
60
15
d(on)
c
Rise Time
t
r
12
V
= 15 V, R = 0.3 W
L
GEN g
DD
ns
c
I
D
^ 50 A, V
= 10 V, R = 2.5 W
Turn-Off Delay Time
t
40
d(off)
c
Fall Time
t
f
10
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
I
100
1.5
80
A
V
SM
b
Diode Forward Voltage
V
SD
I
F
= 100 A, V = 0 V
1.2
40
GS
Source-Drain Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/ms
ns
Notes
a. Guaranteed by design, not subject to production testing.
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
a. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
200
200
150
100
50
V
GS
= 10 thru 5 V
160
120
80
40
0
4 V
T
= 125_C
C
25_C
3 V
−55_C
0
0
2
4
6
8
10
0
1
2
3
4
5
6
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72237
S-40841—Rev. B, 03-May-04
www.vishay.com
2
SUD70N03-04P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
On-Resistance vs. Drain Current
180
0.010
0.008
0.006
0.004
0.002
0.000
T
= −55_C
25_C
C
150
120
90
60
30
0
V
GS
= 4.5 V
125_C
V
GS
= 10 V
0
20
40
60
80
100
0
20
40
60
80
100
I
D
− Drain Current (A)
I
D
− Drain Current (A)
Capacitance
Gate Charge
10
8
8000
6000
4000
2000
0
V
D
= 15 V
DS
C
iss
I
= 50 A
6
4
2
C
oss
C
rss
0
0
6
12
18
24
30
0
20
40
Q − Total Gate Charge (nC)
g
60
80
100
V
− Drain-to-Source Voltage (V)
DS
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
100
10
1
V
I
= 10 V
GS
= 20 A
T = 150_C
T = 25_C
J
D
J
−50 −25
0
25
50
75 100 125 150 175
0
0.3
0.6
0.9
1.2
1.5
T
− Junction Temperature (_C)
V
SD
− Source-to-Drain Voltage (V)
J
Document Number: 72237
S-40841—Rev. B, 03-May-04
www.vishay.com
3
SUD70N03-04P
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current vs.
Ambient Temperature
Safe Operating Area
1000
40
32
24
16
8
Limited
by r
DS(on)
10 ms
100 ms
100
10
1 ms
10 ms
100 ms
1
1 s
10 s
100 s
DC
Single Pulse
0.1
T
A
= 25_C
0
0.01
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
− Drain-to-Source Voltage (V)
T
A
− Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
Square Wave Pulse Duration (sec)
1
10
100
Document Number: 72237
S-40841—Rev. B, 03-May-04
www.vishay.com
4
相关型号：
SUD70N03-04P-T4-E3
Power Field-Effect Transistor, 33A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3
VISHAY
SUD70N03-06P-T4
Power Field-Effect Transistor, 70A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
VISHAY
SUD70N03-06P-T4-E3
Power Field-Effect Transistor, 70A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3
VISHAY
©2020 ICPDF网 联系我们和版权申明