SUF-4000 [SIRENZA]
0.15-10 GHz, Cascadable pHEMT MMIC Amplifier; 0.15-10千兆赫,可级联的pHEMT MMIC放大器![SUF-4000](http://pdffile.icpdf.com/pdf1/p00106/img/icpdf/SUF-4000_572240_icpdf.jpg)
型号: | SUF-4000 |
厂家: | ![]() |
描述: | 0.15-10 GHz, Cascadable pHEMT MMIC Amplifier |
文件: | 总4页 (文件大小:135K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Preliminary
SUF-4000
0.15-10 GHz, Cascadable pHEMT
MMICAmplifier
Product Description
Sirenza Microdevices’ SUF-4000 is a monolithically matched broadband
high IP3 gain block covering 0.15-10 GHz. This pHEMT FET-based
amplifier uses a patented self-bias Darlington topology featuring a gain
and temperature compensating active bias network that operates from
a single 5V supply. It offers efficient, cascadable performance in a
compact 0.88 x 0.80 mm2 die. It is well-suited for RF, LO, and IF driver
applications.
Product Features
• Broadband Performance
• High Gain = 17.0 dB @ 2 GHz
• P1dB = 21 dBm @ 2 GHz
• Low-noise, Efficient Gain Block
• 5V Operation, No Dropping Resistor
• Low Gain Variation vs. Temperature
• Patented Thermal Design
Gain & Return Loss vs. Frequency
(GSG Probe Data)
30
25
20
15
10
5
0
-5
IRL
• Patented Self-Bias Darlington Topology
-10
-15
-20
-25
-30
GAIN
Applications
• Broadband Communications
• Test Instrumentation
• Military & Space
• LO and IF Mixer Applications
• High IP3 RF Driver Applications
ORL
0
0
3
6
9
12
15
Frequency (Ghz)
Symbol
Parameters
Small Signal Power Gain
Units
Frequency
Min.
Typ.
Max.
2 GHz
6 GHz
2 GHz
6 GHz
2 GHz
6 GHz
2 GHz
6 GHz
2 GHz
6 GHz
2 GHz
6 GHz
2 GHz
6 GHz
17.0
14.5
21.0
20.0
32.0
30.5
Gp
dB
P1dB
OIP3
NF
Output Power at 1dB Compression
Output Third Order Intercept Point
Noise Figure
dBm
dBm
dB
2.8
3.7
12.0
-11.5
-18.0
-20.0
-21.0
IRL
Input Return Loss
dB
ORL
Isol
Output Return Loss
dB
Reverse Isolation
dB
-20.0
5.0
VD
ID
Device Operating Voltage
V
Device Operating Current
mA
73
Gain Variation vs. Temperature
Thermal Resistance (junction-to-backside)
dB/°C
°C/W
0.01
164
ΔG/ΔT
Rth, j-l
Test Conditions: VS = 5.0V, I = 73mA, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm
D
Z = Z = 50 Ohms, 25C, GSG Probe Data With Bias Tees
S
L
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-105418 Rev A
Preliminary
SUF-4000 0.15-10 GHz Cascadable MMIC Amplifier
Typical Performance (GSG Probe Data)
S21 vs. Frequency
P1dB vs. Frequency
20
18
16
14
12
10
23
22
21
20
19
18
8
17
-20C
25C
6
16
25C
-20C
4
2
0
85C
15
14
13
85C
0
3
6
9
12
15
0
1
2
3
4
5
6
7
8
9
10
Frequency (GHz)
Frequency (GHz)
S11 vs. Frequency
S22 vs. Frequency
0
0
-5
-10
-15
-20
-25
-30
-5
-10
-15
-20
-25
-30
-20C
25C
85C
-20C
25C
85C
0
3
6
9
12
15
0
3
6
9
12
15
Frequency (GHz)
Frequency (GHz)
Noise Figure vs. Frequency
OIP3 vs. Frequency
7
35
33
31
29
27
25
6
5
4
3
2
1
0
25C
-20C
85C
25C
-20C
85C
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
Frequency (GHz)
Frequency (GHz)
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-105418 Rev A
Preliminary
SUF-4000 0.15-10 GHz Cascadable MMIC Amplifier
Typical Performance (GSG Probe Data)
Freq
(GHz)
0.15
0.50
0.85
2.0
VD
(V)
5
Current
(mA)
73
Gain
(dB)
17.0
17.0
17.0
17.0
16.0
14.5
11.0
P1dB
OIP3
S11
(dB)
-18.0
-19.5
-20.0
-18.5
-14.5
-11.5
-9.0
S22
(dB)
NF
(dBm)
(dBm)
(dB)
-18.0
-19.5
-19.0
-18.5
-18.5
-20.0
-16.5
5
73
5
73
21.0
21.0
20.5
20.0
32.5
32.0
31.0
30.5
2.8
2.8
3.3
3.7
4.7
5
73
4.0
5
73
6.0
5
73
10.0
5
73
Test Conditions: GSG Probe Data With Bias Tees, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm, 25C
Test Conditions:
Parameter
Absolute Limit
Max Device Current (ID)
Max Device Voltage (VD)
80mA
5.5V
Max RF Input Power
Max Dissipated Power
10dBm
440mW
150C
Max Junction Temperature (TJ)
Operating Temperature Range (TL)
-40 to +85C
-65 to 150C
Max Storage Temp.
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating values
specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH, j-l
TL=Backside of die
ELECTROSTATIC SENSITIVE DEVICE
Appropriate precautions in handling, packaging
and testing devices must be observed.
Current Variation vs. Temperature
Current vs. Voltage
80
75
70
65
60
55
50
-20C
25C
85C
4.75 4.80 4.85 4.90 4.95 5.00 5.05 5.10 5.15 5.20 5.25
VD
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
3
EDS-105418 Rev A
Preliminary
SUF-4000 0.15-10 GHz Cascadable MMIC Amplifier
Pad Description
1
2
Notes:
Pad #
1
Function
Description
1. All Dimensions in Inches [Millimeters].
2. No connection required for unlabeled bond pads.
3. Die Thickness is 0.004 (0.100).
4. Typical bond pad is 0.004 (0.100) square.
5. Backside metalization: Gold.
6. Backside is Ground.
This pad is DC coupled and matched to 50 Ohms.
An external DC block is required.
This pad is DC coupled and matched to 50 Ohms.
Bias is applied through this pad.
RFIN
RFOUT / Bias
GND
2
7. Bond pad metalization: Gold.
Die
Bottom
Die bottom must be connected to RF/DC ground
using silver-filled conductive epoxy.
Device Assembly
+5V
Interconnect
Wire or Ribbon
Choke
50Ω Line
DC Block
DC Block
50Ω Line
3-5 mil gap
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-105418 Rev A
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