SUF-6000 [SIRENZA]
2-16 GHz Broadband pHEMT Amplifier; 2-16 GHz的宽带pHEMT制放大器
| 型号： | SUF-6000 |
| 厂家： | 
SIRENZA MICRODEVICES |
| 描述： | 2-16 GHz Broadband pHEMT Amplifier |
| 文件： | 总4页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advanced Information
SUF-6000
2-16 GHz Broadband pHEMT Amplifier
Product Description
Sirenza Microdevices’ SUF-6000 is a high gain broadband 2-stage
amplifier covering 2-16 GHz for wideband communication and general
purpose applications. This pHEMT FET-based amplifier uses a patented
self-bias Darlington topology featuring a gain and temperature
compensating active bias network that operates from a single 5V supply.
Its compact size make it ideal for high-density multi-chip module
applications.
Product Features
• Broadband Performance
• High Gain = 17.4 dB @ 14 GHz
• P1dB = 12.0 dBm @ 14 GHz
• IP3 = 24.9 dBm @ 14 GHz
• 5V Operation, No Dropping Resistor
• Low Gain Variation vs. Temperature
• Patented Thermal Design
Gain & Return Loss vs. Frequency
GSG Probe Data
24
20
16
12
8
0
Gain
-5
• Patented Self-Bias Darlington Circuit
-10
-15
-20
-25
-30
ORL
Applications
• Broadband Communications
• Test Instrumentation
• Military & Space
• LO and IF Mixer Applications
• High IP3 RF Driver Applications
4
IRL
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Parameters
Symbol
Units
Frequency
Min.
Typ.
Max.
2 GHz
6 GHz
14 GHz
2 GHz
6 GHz
14 GHz
2 GHz
6 GHz
14 GHz
2 GHz
6 GHz
14 GHz
2 GHz
6 GHz
14 GHz
2 GHz
6 GHz
14 GHz
2 GHz
6 GHz
14 GHz
18.0
20.5
17.4
13.0
14.0
12.0
25.3
27.5
24.9
5.0
Gp
Small Signal Power Gain
dB
P1dB
OIP3
NF
Output Power at 1dB Compression
Output Third Order Intercept Point
Noise Figure
dBm
dBm
dB
4.7
6.0
-14.2
-19.7
-12.1
-26.2
-19.4
-11.5
-36.9
IRL
Input Return Loss
dB
ORL
Isol
Output Return Loss
dB
Reverse Isolation
dB
-34.4
-32.6
5.0
VD
ID
Device Operating Voltage
Device Operating Current
V
mA
107
Device Gain Temperature Coefficient
Thermal Resistance (junction-to-backside)
V= 5 V I = 80 mA Typ.
dB/°C
°C/W
TBD
TBD
ΔG/ΔT
Rth, j-l
OIPTone Spacing = 1 MHz, Pout per tone = 0 dBm
Test Conditions:
Test Conditions: VD = 5.0V, ID = 107mA, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms, 25C, GSG Probe Data With Bias Tees
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2007 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-105420 Rev A
Advanced Information
SUF-6000 2-16 GHz Broadband pHEMT Amplifier
Typical Performance (GSG Probe Data)
|S21| vs. Frequency
P1dB vs. Frequency
16
24
20
16
14
12
10
8
12
25C
-20C
25C
85C
-40C
85C
8
4
0
6
2
4
6
8
10
12
14
16
18
20
2
4
6
8
10
12
14
16
18
Frequency (GHz)
Frequency (GHz)
|S22| vs. Frequency
|S11| vs. Frequency
0
0
-5
25C
-40C
85C
-5
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
25C
-40C
85C
2
4
6
8
10
12
14
16
18
20
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Frequency (GHz)
NF vs. Frequency
OIP3 vs. Frequency (0dBm/tone, 1MHz spacing)
10
8
28
26
24
22
20
18
6
4
-20C
-20C
25C
85C
25C
85C
2
0
2
4
6
8
10
12
14
16
18
2
4
6
8
10
12
14
16
18
Frequency (GHz)
Frequency (GHz)
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-105420 Rev A
Advanced Information
SUF-6000 2-16 GHz Broadband pHEMT Amplifier
Typical Performance (GSG Probe Data)
Freq
VD
Current
Gain
P1dB
OIP3
S11
S22
NF
(GHz)
2
(V)
5
(mA)
107
107
107
107
107
107
107
107
107
(dB)
18.0
18.9
19.6
20.2
20.5
19.6
18.4
17.4
14.5
(dBm)
13.0
13.6
13.7
14.1
14.0
13.2
12.9
12.0
10.6
(dBm)
25.3
26.1
26.8
26.8
27.5
26.4
25.9
24.9
23.8
(dB)
-14.2
-16.2
-18.6
-20.0
-19.7
-26.3
-19.9
-12.1
-7.9
(dB)
-26.2
-32.0
-32.2
-26.9
-19.4
-13.3
-12.1
-11.5
-12.5
(dB)
5.0
5.0
5.0
5.0
4.7
5.3
5.6
6.0
7.0
2.4
3
5
5
4
5
6
5
10
12
5
5
Test Conditions:
14
5
16
5
Test Conditions: GSG Probe Data With Bias Tees, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm, 25°C
Parameter
Max Device Current (ID)
Max Device Voltage (VD)
Max RF Input Power
Absolute Limit
163mA
5.5V
10dBm
Max Dissipated Power
Max Junction Temperature (TJ)
Operating Temperature Range (TL)
Max Storage Temp.
150C
-40 to +85C
-65 to +150C
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating values
specified in the table on page one.
Current Variation vs. Temperature
Bias Conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH, j-l
TL=Backside of die
Current vs. Voltage
120
ELECTROSTATIC SENSITIVE DEVICE
Appropriate precautions in handling, packaging
and testing devices must be observed.
115
110
105
100
95
-20C
25C
85C
90
4.75
4.85
4.95
5.05
5.15
5.25
Volatage (V)
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-105420 Rev A
Advanced Information
SUF-6000 2-16 GHz Broadband pHEMT Amplifier
Pad Description
2
1
Notes:
Pad #
1
Function
Description
1. All Dimensions in Inches [Millimeters].
2. No connection required for unlabeled bond pads.
3. Die Thickness is 0.004 (0.100).
4. Typical bond pad is 0.004 (0.100) square.
5. Backside metalization: Gold.
6. Backside is Ground.
This pad is DC coupled and matched to 50 Ohms.
An external DC block is required.
This pad is DC coupled and matched to 50 Ohms.
Bias is applied through this pad.
RFIN
RFOUT / Bias
GND
2
7. Bond pad metalization: Gold.
Die
Bottom
Die bottom must be connected to RF/DC ground
using silver-filled conductive epoxy.
Device Assembly
+5V
Interconnect
Wire or Ribbon
Bypass Cap(s)
Choke
50Ω Line
DC Block
50Ω Line
DC Block
3-5 mil gap
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-105420 Rev A
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