SUD70N02-05P-T4-E3 [VISHAY]
Power Field-Effect Transistor, 30A I(D), 20V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3;
| 型号： | SUD70N02-05P-T4-E3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, 30A I(D), 20V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3 开关 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUD70N02-05P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High Efficiency
D 100% Rg Tested
VDS (V)
rDS(on) (W)
ID (A)a
0.005 @ V = 10 V
30
23
GS
20
APPLICATIONS
0.0083 @ V = 4.5 V
GS
D Synchronous Buck DC/DC Conversion
- Desktop
- Server
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD70N02-05P
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
20
DS
GS
V
V
"20
30a
T
= 25_C
A
a
Continuous Drain Current
I
D
b
T = 25_C
70
C
A
Pulsed Drain Current
I
100
30
DM
a
Continuous Source Current (Diode Conduction)
I
S
a
T
= 25_C
= 25_C
7.5
A
Maximum Power Dissipation
P
D
W
T
65
C
Operating Junction and Storage Temperature Range
T , T
-55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
16
40
20
50
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
Steady State
_C/W
Maximum Junction-to-Case
1.9
2.3
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package
Document Number: 71930
S-31724—Rev. B, 18-Aug-03
www.vishay.com
1
SUD70N02-05P
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
V
= 0 V, I = 250 mA
D
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
20
GS
(BR)DSS
V
V
V
DS
= V , I = 250 mA
0.8
3.0
"100
1
GS(th)
GS
D
V
DS
= 0 V, V = "20 V
GS
I
nA
GSS
V
= 16 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 16 V, V = 0 V, T = 125_C
50
DS
GS
J
b
On-State Drain Current
I
V
= 5 V, V = 10 V
50
15
A
D(on)
DS
GS
V
= 10 V, I = 20 A
0.0041
0.0064
0.005
0.007
GS
D
b
V
= 10 V, I = 20 A, T = 125_C
Drain-Source On-State Resistance
r
W
GS
D
J
DS(on)
V
= 4.5 V, I = 20 A
0.0083
GS
D
b
Forward Transconductance
g
fs
V
= 15 V, I = 20 A
S
DS
D
Dynamica
Input Capacitance
C
C
2550
900
415
19
iss
V
GS
= 0 V, V = 10 V, f = 1 MHz
DS
Output Capacitance
pF
oss
Reverse Transfer Capacitance
C
rss
c
Total Gate Charge
Q
30
g
c
Gate-Source Charge
Q
Q
7.5
6.0
1.5
11
V
= 10 V, V = 4.5 V, I = 50 A
nC
gs
gd
DS
GS
D
c
Gate-Drain Charge
Gate Resistance
R
0.5
2.8
20
15
35
15
W
g
c
Turn-On Delay Time
t
d(on)
c
Rise Time
t
10
r
V
DD
= 10 V, R = 0.2 W
L
ns
c
I
D
^ 50 A, V
= 10 V, R = 2.5 W
Turn-Off Delay Time
t
24
GEN G
d(off)
c
Fall Time
t
9
f
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
I
100
1.5
70
A
V
SM
b
Diode Forward Voltage
V
SD
I
F
= 50 A, V = 0 V
1.2
35
GS
Source-Drain Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/ms
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
100
80
60
40
20
0
160
140
V
GS
= 10 thru 5 V
120
100
80
60
40
20
0
4 V
T
= 125_C
C
3 V
2 V
25_C
-55_C
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71930
S-31724—Rev. B, 18-Aug-03
www.vishay.com
2
SUD70N02-05P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
On-Resistance vs. Drain Current
100
0.010
0.008
0.006
0.004
0.002
0.000
T
= -55_C
C
80
60
40
20
0
25_C
V
GS
= 4.5 V
125_C
V
V
= 6.3 V
= 10 V
GS
GS
0
10
20
30
40
50
0
20
40
60
80
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Capacitance
Gate Charge
3500
3000
2500
2000
1500
1000
500
10
8
V
I
= 10 V
DS
D
C
iss
= 50 A
6
4
C
oss
C
rss
2
0
0
0
4
8
12
16
20
0
8
16
24
32
40
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1.6
1.4
1.2
1.0
0.8
0.6
100
10
1
V
GS
= 10 V
I
D
= 30 A
T = 150_C
J
T = 25_C
J
-50 -25
0
25
50
75 100 125 150 175
0
0.3
V
0.6
0.9
1.2
1.5
T
- Junction Temperature (_C)
- Source-to-Drain Voltage (V)
J
SD
Document Number: 71930
S-31724—Rev. B, 18-Aug-03
www.vishay.com
3
SUD70N02-05P
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
Safe Operating Area
1000
40
32
24
16
8
Limited
by r
DS(on)
10, 100 ms
100
10
1 ms
10 ms
100 ms
1 s
10 s
100 s
dc
1
T
= 25_C
A
0.1
Single Pulse
0
0.01
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
T
A
- Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (sec)
1
10
100
Document Number: 71930
S-31724—Rev. B, 18-Aug-03
www.vishay.com
4
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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